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SMG3401
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
Description
The SMG3401 uses advanced trench technology
to provide excellent on-resistance extremely
efficient and cost-effectiveness device.
The SMG3401
is universally used for all
commercial-industrial applications.
Features
* Small Package Outline
* Lower Gate Charge
* RoHS Compliant
-4.2A, -30V,RDS(ON) 50m
Ω
P-Channel Enhancement Mode Power Mos.FET
A
L
S
3
Top View
2
G
H
Gate
Source
B
1
D
C
K
Drain
J
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.1
S 2.40 2.80
All Dimension in mm
5
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1,2
Thermal Data
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
G
S
-30
±12
o
C
o
C
0
o
C
-4.2
-3.5
30
1.38
0.01
-55~+150
V
V
A
A
W / C
o
A
W
o
C
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
3
Max.
Symbol Ratings Unit
o
Rthj-a
90
/W C
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SMG3401
-4.2A, -30V,RDS(ON) 50m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=55 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
o
Min. Unit
BVDSS
VGS(th)
IGSS
o
C
o
C
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
T
f
Ciss
Coss
Crss
-30
-0.7
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
_
_
_
_
_
_
_
9.4
2
3
6.3
3.2
38.2
12
954
115
77
-1 3.
±
100
120
_
-1
-5
50
65
_
_
_
_
_
_
_
_
_
_
m
V
nA
uA
uA
nC
nS
pF
V
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS= 1224V
VDS=- V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-
Ω
VDS=- V
VDS=-15V
VGS=-10V
RG=
R =
Ω
Test Condition
±
4.2A
4 0VGS=-4.5V, ID=- . A
1 0VGS=-2.5V, ID=- . A
4
ID=- A
15
VGS=-4.5V
Ω
6
Ω
L 3.6
VGS=0V
1
VDS=- 5V
f=1.0MHz
Gate Resistance Rg Ω
_
6
_
f=1.0MHz
Source-Drain Diode
Parameter Symbol Max.
≦
2
2
Trr
Qrr
_
_ _
≦
Forward On Voltage VSD
Reverse Recovery Time
Reverse Recovery Charge
Continuous Source Current (Body Diode) IS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 270 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ. Test ConditionMin. Unit
__
20.2
11.2
__
°C/W
-1.0
_
-2.2
nS
nC
V
IS=-1.0
A, VGS=0V.
-4
Is= A, VGS=0
dl/dt=100A/uS
A
VD=VG=0V,VS=-1.0V
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01
0.00 01
0.0
01
0.00
0.0
SMG3401
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-4.2A, -30V,RDS(ON) 50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SMG3401
-4.2A, -30V,RDS(ON) 50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig11.NormalizedMaximumTransientThermalImpedance
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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