Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SC-59
TOP VIEW
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0
.40 REF.
C 1.30 1.70 J 0.10 0.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low R
Low thermal impedance
Fast switching speed
trench technology
DS(on)
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
PACKAGE INFORMATION
Package MPQ Leader Size
SMG2391P
-0.9A , -150V , R
P-Channel Enhancement Mode MOSFET
REF.
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
DS(ON)
1.2 Ω
REF.
ΩΩΩ
SC-59 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 5 A
Power Dissipation1
Continuous Source Current (Diode Conduction) 1 IS 1.5 A
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C -0.8
TA=25°C
PD
TA=70°C 0.8
-0.9
1.3
A
W
Operating Junction and Storage Temperature Range TJ, T
-55~150 °C
STG
Thermal Resistance Rating
Maximum Junction to Ambient 1
Steady State 166
Notes:
1. Surface mounted on 1”x1” FR4 board.
2. Pulse width limited by Max. junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A Page 1 of 4
R
θJA
t<= 10sec
100
°C / W
Page 2
SMG2391P
-0.9A , -150V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
DS(ON)
1.2 Ω
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max. Unit
Static
On-State Drain Current
Gate-Source Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance R
Forward Transconductance g
Diode Forward Voltage VSD - -0.8 - V IS= -0.75A, VGS=0
I
D(on)
GS(th)
GSS
DSS
DS(ON)
fs
-0.5 - - A VDS= -5V,VGS= -10V
-1 - - V VDS=VGS, ID= -250uA
- -
- - -1
- - -10 VDS= -120V, VGS=0,TJ =55°C
- - 1.2
- - 1.3 VGS= -4.5V, ID= -0.7A
- 2.2 - S VDS= -15V, ID= -0.5A
±
100
nA VDS=0,VGS= ±20V
VDS= -120V, VGS=0
µA
VGS= -10V, ID= -0.8A
Ω
Dynamic
Total Gate Charge Qg - 3.4 Gate-Source Charge Qgs - 1.3 Gate-Drain Charge Qgd - 1.6 Turn-on Delay Time T
Rise Time Tr - 10 Turn-off Delay Time T
Fall Time Tf - 11 -
- 3 -
d(on)
- 15 -
d(off)
nC
nS
VDS= -75V,
VGS= -4.5V,
ID= -0.8A
VDD= -75V,
V
= -10V,
GEN
R
=6Ω,
GEN
RL=93.8Ω,
ID= -0.8A
Teat Conditions
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Notes:
1. Pulse test : PW≦300µs, duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
- 334 -
iss
- 41 -
oss
- 23 -
rss
pF
VDS= -15V,
VGS=0,
f=1.0MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG2391P
-0.9A , -150V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
1.2 Ω
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A Page 3 of 4
Page 4
SMG2391P
-0.9A , -150V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
DS(ON)
1.2 Ω
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A Page 4 of 4
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