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SMG2359P
Elektronische Bauelemente
-1.6 A, -60 V, R
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
0.381
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process
To provide low R
and to ensure minimal power loss and heat dissipation.
DS(on)
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
I
V
DS
-60
(V) R
0.381@V
0.561@VGS= -4.5V -1.3
(on) (
DS
= -10V -1.6
GS
D
(A)
Drain
Gate
SC-59
A
L
3
Top View
1
K E
F
REF.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
C B
2
D
G
Millimeter
Min. Max. Min. Max.
H J
REF.
3
1
2
Millimete
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T
Source
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATING UNIT
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
A
Pulsed Drain Current B I
Continuous Source Current (Diode Conduction) A I
Power Dissipation A
Operating Junction and Storage Temperature Range T
TA=25°C
TA=70°C 1.4
=25°C
T
A
TA=70°C 0.8
I
D
±15 A
DM
-1.7 A
S
P
D
, T
-55 ~ 150 °C
J
STG
1.7
1.3
A
W
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t≦5 sec
Steady-State 166
R
θJA
100
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A Page 1 of 4
Page 2
SMG2359P
Elektronische Bauelemente
-1.6 A, -60 V, R
P-Channel Enhancement MOSFET
DS(ON)
0.381
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
PARAMETER
SYMBO
MIN TYP MAX UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current A I
Drain-Source Breakdown Voltage V
Drain-Source On-Resistance A R
Forward Transconductance A g
Diode Forward Voltage VSD - - -1.2 V IS= -2.5A, VGS=0V
-1 -2.1 -3.5 V V
GS(th)
- - ±100 nA V
GSS
- - -1
DSS
- - -10 V
-8 - - A V
D(ON)
BR(DSS)
-60 - - V V
- 300 381
DS(ON)
μA
mΩ
= VGS, ID = -250μA
DS
= 0V, VGS= ±20V
DS
V
= -48V, VGS= 0V
DS
= -48V, VGS= 0V, TJ=55°C
DS
= -5V, VGS= -10V
DS
= 0, ID = -1mA
GS
V
= -10V, ID = -1.6A
GS
- 450 561 VGS= -4.5V, ID = -1.3A
- 8 - S VDS= -15V,,ID = -1.6A
FS
Dynamic b
Total Gate Charge Qg - 18 -
Gate-Source Charge Qgs - 5 -
Gate-Drain Charge Qgd - 2 -
Turn-On Delay Time Td
Rise Time Tr - 10 -
Turn-Off Delay Time Td
Fall Time Tf - 12 -
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
- 8 -
(ON)
- 35 -
(OFF)
nC
nS
I
= -1.6A
D
= -30V
V
DS
= -4.5V
V
GS
I
= -1A, VDD= -30V
D
= -10V
V
GEN
= 6Ω
R
G
= 30Ω
R
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2359P
-1.6 A, -60 V, R
P-Channel Enhancement MOSFET
DS(ON)
0.381
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2359P
-1.6 A, -60 V, R
P-Channel Enhancement MOSFET
DS(ON)
0.381
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A Page 4 of 4
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