Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SC-59
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2343 uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM
applications.
FEATURES
Lower Gate Threshold Voltage
Small Package Outline
MARKING
SMG2343
-4.1A , -30V , R
P-Channel Enhancement Mode MOSFET
REF.
DS(ON)
45 mΩ
ΩΩΩ
REF.
2343
PACKAGE INFORMATION
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
Package MPQ Leader Size
SC-59 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current 1 IDM -12 A
Power Dissipation TA=25°C PD 1.38 W
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C -3.5
-4.1
A
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C
Thermal Resistance Rating
Maximum Junction to Ambient 3 R
90 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 1 of 4
Page 2
SMG2343
-4.1A , -30V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
DS(ON)
45 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 2 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
-30 - - V VGS=0, ID= -250uA
-1.0 - -2.0 V VDS=VGS, ID= -250uA
- -
- - -1
- - -5 VDS= -24V, VGS=0
- - 45
- - 65 VGS= -4.5V, ID= -3.0A
- 60 - S VDS= -10V, ID= -4A
Dynamic
Total Gate Charge2 Qg - 15.2 Gate-Source Charge Qgs - 5.5 Gate-Drain Charge Qgd - 1 Turn-on Delay Time2 T
Rise Time Tr - 12.2 Turn-off Delay Time T
Fall Time Tf - 20.8 -
- 8.6 -
d(on)
- 36.6 -
d(off)
±
100
Unit
nA VGS=±20V
VDS= -24V, VGS=0
µA
VGS= -10V, ID= -4.1A
mΩ
VDS= -24V,
nC
VGS= -10V,
ID= -3A
VDS= -15V,
VGS= -10V,
nS
RG=6Ω,
RD=15Ω,
ID= -1A
Teat Conditions
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Diode Forward Voltage 2 VSD - - -1 V IS= -1A, VGS=0, TJ=25°C
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
- 590 -
iss
- 75 -
oss
- 10 -
rss
VGS=0,VDS= -25V,f=1.0MHz
pF
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG2343
-4.1A , -30V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
45 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG2343
-4.1A , -30V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
45 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 4 of 4
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