Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
Millimeter
Min. Max.
Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J
0.10 0.20
1
Gate
2
Source
3
Elektronische Bauelemente
sRoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMG2310A utilized advanced processing techniques to achieve the
lowest possible on-resistance, extremely efficient and cost-effectiveness
device. The SMG2310A is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement,
Small Package Outline
Super High Density Cell Design for Extremely Low R
DS(ON)
SMG2310A
N-Ch Enhancement Mode Power MOSFET
5.0 A, 60 V, R
REF.
DS(ON)
=115 mΩ
SC-59
REF.
MARKING CODE
3
D
N-Channel
Drain
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
2310A
1
2
G
S
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current3 ID @TA=25°C 5.0 A
Continuous Drain Current3 ID @TA=70°C 4.0 A
Pulsed Drain Current
Power Dissipation PD @TA=25°C 1.38 W
Linear Derating Factor 0.01 W/°C
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-ambient3 Max
1,2
IDM 10 A
-55 ~ +150 °C
STG
THERMAL DATA
R
90 °C /W
θJA
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
Drain-Source Leakage Current(Tj=25°C) - - 1 µA V
Drain-Source Leakage Current(Tj=55°C)
Static Drain-Source On-Resistance R
Total Gate Charge2 Qg - 4.0 -
Gate-Source Charge Qgs - 1.2 Gate-Drain (“Miller”) Charge Qgd - 1.0 Turn-on Delay Time2 T
Rise Time Tr - 12 Turn-off Delay Time T
Fall Time Tf - 10 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Forward On Voltage2 VSD - - 1.2 V IS = 2.5 A, V
Notes: 1. Pulse width limited by Max. Junction Temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on Min. copper pad.
(Tj = 25°C unless otherwise specified)
DSS
GS(th)
fs
- - ±100
GSS
I
DSS
DS(ON)
- 6 -
d(on)
- 18 -
d(off)
- 320 -
iss
- 42 -
oss
- 20 -
rss
SOURCE-DRAIN DIODE
60 - - V V
0.5 - 1.5 V V
- 12 - S V
- - 10 µA V
- - 115 V
- - 125
nA V
mΩ
nC
ns
pF
TEST CONDITIONS
= 0, ID = 250µA
GS
= VGS, ID = 250µA
DS
= 15V, ID = 4A
DS
= ±20V
GS
= 60V, V
DS
= 60V, V
DS
= 10 V, ID = 5.0 A
GS
V
= 4.5 V, ID = 4.5 A
GS
ID = 4A
V
= 30V
DS
V
= 4.5V
GS
V
= 30V RG= 6Ω
DD
ID = 2.5A, V
RL =12Ω
V
= 0 V
GS
V
= 30V
DS
f = 1.0MHz
GS
GS
GS
GS
= 0
= 0
= 10 V
= 0V
24-Nov-2009 Rev. A Page 1 of 3
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2310A
N-Ch Enhancement Mode Power MOSFET
5.0 A, 60 V, R
DS(ON)
=115 mΩ
24-Nov-2009 Rev. A Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2310A
N-Ch Enhancement Mode Power MOSFET
5.0 A, 60 V, R
DS(ON)
=115 mΩ
24-Nov-2009 Rev. A Page 3 of 3
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