Page 1
SMG2305
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Description
The SMG2305 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG2305 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Super high dense cell design for extremely low RDS(ON)
* Reliable and rugged
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
-4.2A, -20V,RDS(ON) 65m
Ω
P-Channel Enhancement Mode Power Mos.FET
A
L
H
Top View
2
Gate
3
G
Source
1
Drain
B
D
C
K
G
J
D
S
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2305
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
S
DS
V
VGS
ID@TA=25
I
D@TA=70
DM
I
PD@TA=25
Tj, Tstg
o
C
o
C
o
C
-20
±12
-4.2
-3.4
-10
1.38
0.01
-55~+150
Symbol Ratings Unit
Rthj-a
90
V
V
A
A
A
W
W/ C
o
C
o
/WC
o
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
Page 2
SMG2305
Elektronische Bauelemente
-4.2A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
C
C
o
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Min. Unit
-20
_
-0.5
_
_
_
_
_
_
Typ.
_
-0.1
_
_
_
_
_
_
_
±
100
-10
53
65
100
_
_
_
-1
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
o
o
)
2
Ω
Test Condition
VGS=0V, ID=-250uA
V
o
V/
m
Reference to 25 ,ID=-1mA
V
VDS=VGS, ID=-250uA
±
nA
uA
uA
VGS= 12V
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-4.2A
Ω
VGS=-2.5V, ID=-2A
C
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
T
f
Ciss
Coss
Crss
Forward Transconductance Gfs
Source-Drain Diode
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
VDS=-5V, ID=-2.8A
9
250
_
_
_
_
_
_
_
_
_
_
_
nC
nS
pF
S
VGS=-1.8V, ID=-1A
ID=-4.2A
VDS=-16V
VGS=-4.5V
VDS=-15V
ID=-4.2A
VGS=-10V
Ω
RG=6
Ω
RD=3.6
VGS=0V
VDS=-15V
f=1.0MHz
Parameter Symbol Max.
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
VSD
Trr
Qrr 22
_
_
Typ. Test ConditionMin. Unit
__
27.7
-1.2
_
_
V
nS
nC
IS=-1.2A, VGS=0V.
Is=-4.2A,VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
≦
°C/W
Page 2 of 4
Page 3
SMG2305
Elektronische Bauelemente
Characteristics Curve
-4.2A, -20V,RDS(ON) 65m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
Page 4
SMG2305
Elektronische Bauelemente
-4.2A, -20V,RDS(ON) 65m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
Loading...