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SMG2302
Elektronische Bauelemente
Description
The SMG2302
Combination of fast switching, low on-resistance
and cost-effectiveness.
provide the designer with the best
Features
* Capable of 2.5V gate drive
* Small package outline
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
H
Top View
2
Gate
3
G
Source
1
B
D
C
Drain
S
3.2A, 20V,RDS(ON) 85m
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
J
K
D
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.1
S 2.40 2.80
All Dimension in mm
Ω
SC-59
5
Marking : 2302
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1,2
Thermal Data
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
G
S
V
W
W / C
o
V
A
A
A
o
C
20
±12
o
C
o
0
C
o
C
3.2
2.6
10
1.38
0.01
-55~+150
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
3
Symbol Ratings Unit
o
Rthj-a
90
/W C
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SMG2302
Elektronische Bauelemente
3.2A, 20V,RDS(ON) 85m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
o
Min. Unit
BVDSS
BVDS/ Tj
VGS(th)
IGSS
o
C
o
C
)
2
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
20
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.1
_
_
_
_
_
_
4.4
0.6
1.9
5.2
37
15
5.7
145
100
50
±
_
_
1.2
100
1
10
85
115
_
_
_
_
_
_
_
_
_
_
V/
nA
uA
uA
m
V
Test Condition
V
nC
nS
pF
VGS=0V, ID=250uA
o
Reference to 25 ,ID=1mA
C
VDS=VGS, ID=250uA
±
VGS= 12V
VDS=20V,VGS=0
VDS=20V,VGS=0
VGS=4.5V, ID=3.6A
Ω
VGS=2.5V,
ID=3.6A
VDS=10V
VGS=4.5V
VDD=10V
ID=3.6A
VGS=5V
Ω
RG=6
Ω
RD=2.8
VGS=0V
VDS=10V
f=1.0MHz
Ω
ID=3.1A
o
C
Forward Transconductance
Gfs
_
_
S6
VDS=5V, ID=3.6A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
2
VSD
Is
ISM
Min. Unit
_ _
_
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ.
°C/W
Test Condition
__
1.2
1
_
10
V
A
IS=1.6A, VGS=0V.
VD=VGG=0V, VS=1.2V
A
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SMG2302
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
3.2A, 20V,RDS(ON) 85m
N-Channel Enhancement Mode Power Mos.FET
Ω
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Page 4
SMG2302
3.2A, 20V,RDS(ON) 85m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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