Page 1
SMG2301
Elektronische Bauelemente
A suffix of "-C" specifies halogen & RoHS compliant
Description
The SMG2301 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Super high dense cell design for extremely low RDS(ON)
* Reliable and rugged
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
L
H
Top View
2
Gate
3
1
G
Drain
Source
S
-2.6A, -20V,RDS(ON) 130m
B
D
C
K
G
J
D
Ω
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.1
S 2.40 2.80
All Dimension in mm
5
Marking : 2301
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
S
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
o
C
o
0
C
o
C
-20
±12
-2.6
-2.1
-10
1.38
0.01
-55~+150
Symbol Ratings Unit
Rthj-a
90
V
W
W / C
o
o
V
A
A
A
o
C
/W C
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
Page 2
SMG2301
Elektronische Bauelemente
-2.6A, -20V,RDS(ON) 130m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
o
Min. Unit
BVDSS
BVDS/ Tj
VGS(th)
IGSS
o
C
o
C
)
2
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
-20
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.1
_
_
_
_
_
_
5.2
1.36
0.6
5.2
9.7
19
29
295
170
65
±
_
_
_
100
-1
-10
130
190
10
_
_
_
_
_
_
_
_
_
Ω
Test Condition
VGS=0V, ID=-250uA
V
o
Reference to 25 ,ID=-1mA
C
V/
V
VDS=VGS, ID=-250uA
±
nA
uA
uA
m
nC
nS
pF
VGS= 12V
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VGS=-5.0V, ID=-2.8A
Ω
VGS=-2.8V, ID=-2A
ID=-2.8A
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
VGS=0V
VDS=-6V
f=1.0MHz
Ω
Ω
o
C
Forward Transconductance
Gfs
_
4.4
_
S
VDS=-5V, ID=-2.8A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
2
VSD
Is
-10
ISM
Min. Unit
_ _
_
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ.
°C/W
Test Condition
__
-1.2
-1
_
V
A
IS=-1.6A, VGS=0V.
VD=VGG=0V, VS=-1.2V
A
Page 2 of 4
Page 3
SMG2301
Elektronische Bauelemente
Characteristics Curve
-2.6A, -20V,RDS(ON) 130m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
Page 4
SMG2301
Elektronische Bauelemente
-2.6A, -20V,RDS(ON) 130m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
Loading...