QUAD 2 INPUT H C C/ HCF 4011B
DUAL 4 INPUT HCC/HCF 4012B
TRIPLE 3 INPU T HCC/HCF 4023B
.PROPAGATIONDELAY TIME = 60ns (typ.) AT
CL= 50pF, VDD= 10V
.BUFFERED INPUTS AND OUTPUTS
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.INPUT CURRENTOF100nA AT18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.5V, 10V AND 15V PARAMETRIC RATINGS
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”
HCC4011B/12B/23B
HCF4011B/12B/23B
NAND GATES
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)C1(PlasticChipCarrier)
ORDER CODES :
HCC40XXBFHCF40XXBM1
HCF40XXBEYHCF40XXBC1
DESCRIPTION
The HCC4011B, HCC4012B and HCC4023B (ex-
tended temperature range) and HCF4011B,HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
PIN CONNECTIONS
4011B4012B4023B
TheHCC/HCF4011B,HCC/HCF4012Band
HCC/HCF4023B NAND gates provide the system
designer with direct implementation of the NAND
function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buffered.
June 1989
1/12
Page 2
HCC/H FC4011B/12B/23B
ABSOLUTE M AXI MU M RATI NGS
SymbolParameterVal ueUnit
V
*Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage– 0.5 to VDD+ 0.5V
i
I
DC Input Current (any one input)± 10mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for Top= Full Package-temperature Range
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functionaloperationofthedeviceattheseorany otherconditions above thoseindicatedin theoperationalsections of thisspecificationisnotimplied.
Exposure to absolute maximum rating conditions forexternal periodsmay affectdevice reliability.
* Allvoltage values arereferredto VSSpinvoltage.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life supportdevices orsystems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -