Datasheet SMBYW04-200 Datasheet (SGS Thomson Microelectronics)

SMBYW04-200

®

HIGH EFFICIENC Y FA ST RECO VE RY DIO D E

MAIN PRODUCT CHARACTERISTI CS

I

F(AV)

V

RRM

(max) 0.85 V

V

F

Tj (max) 150 ° C

FEATURES AND BENE FITS

SUITED T O SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW F ORW A RD LO SSE S
NEGLIGIBLE SWITCHING LOSSE S
HIGH SURGE CURRENT CAPAB ILITY

DESCRIPTION

Single chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.

Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.

4 A

200 V

3

4

DPAK

BYW4200B

2
4(TAB)

2

1(nc)

BYW4200B

3

SMC

(JEDEC DO-214AB)

SMBYW04-200

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

Repetitive peak reverse voltage 200 V
RMS forward current 10 A
Average forward current

δ

= 0.5

Surge non repetitive forward current tp = 10 ms

DPAK
SMC

Tcase = 130° C
Tlead = 70°C

4A

70 A

sinusoidal

Tstg Storage temperature range - 65 to + 150

Tj Maximum operating junction temperature 150 °C

October 1999 - Ed: 4C

°

C

1/6

SMBYW04-200 / BYW4200B

THERMAL RESISTANCE

Symbol Parameter Package Value Unit

R

R

th (j-c)

th (j-l)

Junction to case DPAK 5
Junction to leads SMC 20

STATIC ELECTRICAL CHARACTER ISTICS

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

I

* Reverse leakage current Tj = 25°CV

R

= V

R

RRM

10

Tj = 100°C 0.15 0.5 mA

V

** Forward voltage drop Tj = 25°CI

F

Tj = 100°CI

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the fol lowing equ ation :
P = 0.7 x I

F(AV)

+ 0.037 I

F2(RMS)

= 12 A 1.25 V

F

= 4 A 0.8 0.85

F

°

C/W

°

C/W

µ

A

RECOVERY CHARACTE RISTICS

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

t

fr

V

FP

Fig. 1:

Tj = 25°C IF = 1A

V

= 30V

F

Tj = 25°C IF = 4A

V

= 1.1 x VF max

FR

Tj = 25°C IF = 4A dIF/dt = -50 A/µs5 V

Average forward power dissipation versus

/dt = -50 A/µs2635ns

dI

F

/dt = -50 A/µs20 ns

dI

F

Fig. 2:

Peak current ve r su s f o rm f a ct or.

average forward current.

PF(av)(W)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

δ = 0.05

δ = 0.1

IF(av) (A)

δ = 0.2

δ = 0.5

=tp/T

δ

T

δ = 1

tp

IM(A)

20
18
16
14
12
10

8

P=1.0W

6
4
2
0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=1.5W

P=2.0W

P=2.5W

δ

δ

T

=tp/T

tp

2/6

SMBYW04-200 / BYW4200B

Fig. 3:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

4.5

4.0

3.5

SMC

Rth(j-a)=Rth(j-l)

DPAK

Rth(j-a)=Rth(j-c)

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Fig. 5-1:

T

δ

=tp/T

tp

Non repetitive surge peak forward current

Rth(j-a)=75°C/W

Tamb(°C)

versus overload duration (SMBYW04-200).

IM(A)

12

10

8

6

I

M

4

2

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Fig. 4:

Forward voltage drop versus forward

current (maximum values).

IFM(A)

70.0

Tj=100°C

(Typical values)

10.0

Tj=100°C

Tj=25°C

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Fig. 5-2:

Non repetitive surge peak forward current

VFM(V)

versus overload duration (BYW4200B).

IM(A)

50
45
40
35
30
25
20
15

I

M

10

5
0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Tc=125°C

Tc=75°C

Fig. 6-1:

Variation of thermal impedance junction to
ambient versus pulse duration (r ecommended pad
layout , ep ox y F R4 , e (C u)= 35µm) (SMBYW04-200).

Zth(j-a)/Rth(j-a)

1.00

δ = 0.5

δ = 0.2

δ = 0.1

0.10

Single pulse

T

0.01

tp(s)

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

δ

=tp/T

tp

Fig. 6- 2:

Variation of thermal impedance junction

to case versus pulse duration (BYW4200B).

Zth(j-c)/Rth(j-c)

1.0

δ = 0.5

0.5

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

0.1
1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

3/6

SMBYW04-200 / BYW4200B

Fig. 7:

Reverse reco very curren t vers us dI

IRM(A)

2.5

IF=IF(av)

90% confidence

F

2.0

1.5

Tj=100°C

1.0

Tj=25°C

0.5

0.0
1 10 100

Fig. 9:

Junction capacitance versus reverse

dIF/dt(A/µs)

voltage applied (typical values).

C(pF)

100

50

F=1MHz
Tj=25°C

/dt.

Fig. 8:

Reverse recovery time versus dI

trr(ns)

100

90

/dt.

F

IF=IF(av)

90% confidence

80
70
60

Tj=100°C

50
40
30

Tj=25°C

20
10

0

1 10 100

Fig. 10:

Dynamic parameters versus junction

dIF/dt(A/µs)

temperature.

%

250

200

IF=4A

dIF/dt=50A/µs

VR=30V

Qrr

IRM

20

VR(V)

10

1 10 100 200

Fig. 11-1:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm) (SMBYW04-200).

Rth(j-a) (°C/W)

100

90
80
70
60
50
40
30
20
10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu) (cm²)

150

100

25 50 75 100 125 150

Fig. 11-2:

Thermal resistance junction to ambient

Tj(°C)

trr

versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35mm)
(BYW4200B).

Rth(j-a) (°C/W)

100

90
80
70
60
50
40
30
20
10

0

0 2 4 6 8 101214161820

S(Cu) (cm²)

4/6

PACKAGE MECHANICAL DAT A

DPAK

SMBYW04-200 / BYW4200B

DIMENSIONS

REF.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

Millimeters Inches

Min. Max Min. Max.

FOOT PRINT

(in millimeters)

6.7

6.7

3

3

1.61.6

2.32.3

5/6

SMBYW04-200 / BYW4200B

PACKAGE MECHANICAL DAT A

SMC

E1

E

C

L

E2

FOOT PRINT (in millimeters)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126
c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321

A1

A2

E1 6.60 7.15 0.260 0.281
E2 4.40 4.70 0.173 0.185

D 5.55 6.25 0.218 0.246

b

L 0.75 1.60 0.030 0.063

3.3

2.0 4.2 2.0

Ordering code Marking Package Weight Base qty Delivery mode

SMBYW04-200 D20 SMC 0.243g 2500 Tape and reel

BYW4200B W4200 DPAK 0.30g 75 Tube

BYW4200B-RL W4200 DPAK 0.30g 2500 Tape and reel

Epoxy meets UL 94,V0
Band indicates cathode

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