Page 1
SMBYW02-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAINPRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(max) 0.85 V
V
F
2A
200 V
Tj (max) 150°C
FEATURESAND BENEFITS
SUITEDFOR SMPS
VERYLOW CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
HIGHSURGE CURRENT CAPABILITY
LOW FORWARD AND REVERSE RECOVERY
TIMES
DESCRIPTION
Single chip rectifier suited forSwitch Mode Power
Suppliesandhigh frequencyDC to DCconverters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SMB
(JEDECDO-214AA)
ABSOLUTE RATINGS(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage
RMSforward current
Averageforwardcurrent
Tl=100°C
200 V
10 A
2A
δ = 0.5
I
FSM
Nonrepetitive surgepeak forwardcurrent
tp=10ms
50 A
sinusoidal
Tstg
Tj
October 1999 - Ed: 4C
Storagetemperaturerange
Maximumoperatingjunctiontemperature
- 65 to+ 150 °C
150 °C
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Page 2
SMBYW02-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth (j-l)
Junctionto leads
25 °C/W
STATIC ELECTRICALCHARACTERISTICS
Symbol Parameters TestConditions Min. Typ. Max. Unit
V
F*
I
R
Pulse test : * tp = 380 µs, δ <2%
ReverseLeakageCurrent Tj = 25°CI
**
ForwardVoltageDrop T
** tp = 5 ms, δ <2%
F
=100°CI
T
j
=25°CV
j
=100°C
T
j
F
R=VRRM
=6A
=2A
0.8 0.85
0.1 0.3 mA
1.25 V
10 µA
To evaluatethe conductionlossesuse the followingequation :
P = 0.7 x I
F(AV)
+0.075 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=1A dIF/dt= -50A/µsVR=30V 26 35 ns
F
=2A dIF/dt= -50A/µs
F
=1.1 x VFmax
V
FR
=2A dIF/dt= -50A/µs5V
F
30 ns
2/5
Page 3
SMBYW02-200
Fig. 1:
Low frequency power losses versus
averagecurrent.
P
F(av)(W)
2.5
2.0
=0.05
=0.1
=0.2
=0.5
=1
1.5
1.0
T
0.5
I
0.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4
F(av)(A)
=tp/T
tp
Fig. 3: Non repetitivesurge peak forwardcurrent
versusoverloadduration.
I
M(A)
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0.001 0.01 0.1 1 10
t(s)
IM
t
=0.5
o
Tc=25 C
o
Tc=70 C
o
Tc=100 C
Fig. 2:
60
50
40
30
20
10
Peak currentversus form factor.
I
M(A)
T
I
M
=tp/T
tp
P=0.5W
P=1.5W
P=2.5W
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 4: Relative variation of thermal impedance
junctionto lead versuspulseduration.
K
Zth(j-c) (tp. )
K=
1
0.1
0.01
0.001 0.01 0.1 1 10
Rth(j-c)
=0.2
=0.1
Single pulse
=0.5
tp(s)
=tp/ T
T
tp
Fig. 5:
Voltage drop versus forward current
(maximum values).
V
FM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10
o
Tl=100 C
I
FM(A)
20
Fig. 6:
Average current versus ambient
temperature(δ=0.5).
I
F(av)(A)
2.5
2.0
1.5
1.0
=0.5
Rth(j-a)=75 C/W
1cm Cu
T
0.5
=tp/T
0.0
0 20406080100120140160
tp
Rth(j-a)=Rth(j-l)
o
2
Tamb( C)
o
3/5
Page 4
SMBYW02-200
Fig. 7:
applied.
Fig.9:
Capacitance versus reverse voltage
Peakreversecurrent versus dI
F
/dt.
Fig. 8:
Fig. 10:
Recoverytime versusdI
Dynamic parameters versus junction
temperature.
F
/dt.
Fig. 11:
Thermal resistance junction to ambient
versuscoppersurface under each lead.
Rth(j-a)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4/5
Printed circuit : epoxy (e=35µm)
2
Scu(cm )
Page 5
PACKAGEMECHANICAL DATA
SMB
E1
SMBYW02-200
DIMENSIONS
E
C
L
FOOTPRINT DIMENSIONS
SMB
D
A1
A2
(inmillimeters)
2.3
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
b
L 0.75 1.60 0.030 0.063
1.52 2.75
1.52
Orderingtype Marking Package Weight Baseqty Delivery mode
SMBYW02-200 A20 SMB 0.11g 2500 Tape& reel
Bandindicatescathode
EpoxymeetsUL94,V0
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