Datasheet SMBYW01-200 Datasheet (SGS Thomson Microelectronics)

®

HIGH EFFICIENC Y FA ST RECO VE RY DIO D E

MAIN PRODUCT CHARACTERISTICS

SMBYW01-200

I

F(AV)

V

RRM

(max) 0.71 V

V

F

1 A

200 V

Tj (max) 150 ° C

FEATURES AND BENEFITS

VERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP BIPOLAR

DEVICE
LOW PEAK FO RWARD VOL T AGE FOR TELE-

COM TRANSIENT OPERATI ON SUCH AS IN
LIGHTING PROTECTION CIRCUITS

DESCRIPTION

Single chip rectifier suited to Switch Mode Power
Supplies and high frequency DC to DC converters.

Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.

SMB

(JEDEC DO-214AA )

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage
RMS forward current
Average forward current

Tlead=140°C

200 V

8A
1A

δ = 0.5

I

FSM

Surge non repetitive forward current

tp=10ms

60 A

sinusoidal

T

stg

T

j

October 1999 - Ed: 4A

Storage and junction temperature range
Maximum operating junction temperature

- 65 to + 150
150 °C

°

C

1/5

SMBYW01-200

THERMAL RESISTANCE S

Symbol Parameter Value Unit

Rth (j-l)

Junction to lead

13

STATIC ELECTRICAL CHARACTER ISTICS

Symbol Parameters Test Conditions Min. Typ. Max. Unit

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ < 2 %

Forward voltage drop T

Reverse leakage current T

** tp = 5 ms, δ < 2 %

= 25°CI

j

= 150°CI

T

j

= 25°CV

j

T

= 125°C

j

= 1 A

F

= 1 A

F

= V

R

0.65 0.71

RRM

180 400

0.9 V

3

To evaluate the maximum conduction losses use the following equation :
P = 0.58 x I

+ 0.118 x I

F(AV)

F2(RMS )

RECOVERY CHARACTE RISTICS

°

C/W

µ

A

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

t

fr

V

FP

Tj = 25°CIF = 0.5 A Irr = 0.25 A IR = 1A 25 ns

I

= 1 A dIF/dt = - 50 A/µs VR = 30V 25 35

F

Tj = 25°CIF = 1A dIF/dt = 100 A/µs 25 ns

Tj = 25°CIF = 1A dIF/dt = 100 A/µs 5 V

2/5

SMBYW01-200

Fig. 1:

Average forward power dissipation versus

average forward current .

PF(av)(W)

1.0

0.9

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

0.8

0.7

0.6

δ = 1

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 3:

Average forward current versus ambient

IF(av) (A)

temperature (δ=0.5).

IF(av)(A)

1.2

1.0

0.8

Rth(j-a)=Rth(j-l)

Fig. 2:

Peak curren t ver su s f o rm f a ct or.

IM(A)

10

9
8
7
6
5
4
3
2
1
0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=1.5W

P=1.0W

P=0.5W

P=0.25W

δ

Fig. 4:

Non repetitive surge peak forward current

versus overload duration.

IM(A)

8
7
6

Ta=25°C

0.6

Rth(j-a)=100°C/W

0.4

0.2

Tamb(°C)

0.0
0 25 50 75 100 125 150

Fig. 5:

Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm).

Zth(j-a)(°C/W)

1.00

δ = 0.5

δ = 0.2

δ = 0.1

0.10

Single pulse

0.01

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

tp(s)

5

Ta=50°C

4
3
2

1E-3 1E-2 1E-1 1E+0

Fig 6:

Forward voltage drop versus forward current

Ta=75°C

t(s)

(maximum values).

VFM(V)

50.00

10.00

1.00

0.10

0.01

0.0 0.4 0.8 1.2 1.6 2.0 2.4

Tj=125°C

Tj=25°C

IFM(A)

3/5

SMBYW01-200

Fig. 7:

Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

12
10

8
6
4
2
0

1 10 100 200

Fig. 9:

Reverse reco very time v ersus dI

trr(ns)

100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180 200

VR(V)

dIF/dt(A/µs)

F=1MHz
Tj=25°C

/dt.

F

IF=IF(av)
90% confidence
Tj=125°C

Fig. 8:

Reverse rec overy curr ent ver sus dI

IRM(A)

6

IF=IF(av)
90% confidence

5

Tj=125°C

4
3
2
1
0

0 20 40 60 80 100 120 140 160 180 200

Fig. 10:

100

Reverse recovery charges versus dI

Qrr(nC)

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

dIF/dt(A/µs)

/dt .

F

F

IF=IF(av)
90% confidence
Tj=125°C

/dt.

Fig. 11:

Dynamic parameters versus junction

temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]

1.25

1.00

0.75

0.50

0.25

0 25 50 75 100 125 150

4/5

IRM

Qrr

Tj(°C)

Fig. 12:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)

Rth(j-a) (°C/W)

120
100

80
60
40
20

0

012345

S(Cu) (cm²)

PACKAGE MECHANICAL DATA

SMB

SMBYW01-200

E1

E

C

L

FOOT PRINT DIMENSIONS

SMB (P la st ic)

D

A1

A2

(in millimeters)

2.3

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

b

L 0.75 1.60 0.030 0.063

1.52 2.75

1.52

Ordering type Marking Package Weight Base qty Delivery mode

SMBYW01-200 B20 SMB 0.11g 2500 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

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