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SMBYT03
October 1999 - Ed : 2C
FAST RECOVERY RECTIFIER DIODES
DESCRIPTION
FEATURES
SMC
Symbol Parameter Value Unit
I
F(RMS)
RMSforwardcurrent
10 A
I
F(AV)
Averageforwardcurrent
Tl=55°C
δ = 0.5
3A
I
FSM
Nonrepetitive surgepeak forward current
tp=10ms
sinusoidal
60 A
Tstg
Tj
Storageand junctiontemperaturerange
- 40 to + 150
- 40 to + 150°C°C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
Repetitivepeak reversevoltage
400 V
Symbol Parameter Value Unit
Rth (j-l)
Junction-leads
20 °C/W
THERMALRESISTANCE
VERYLOW REVERSERECOVERYTIME
VERYLOW SWITCHINGLOSSES
LOW NOISETURN-OFF SWITCHING
SURFACEMOUNTDEVICE
Single high voltage rectifier ranging from 200V to
400 V suitedfor Switch Mode PowerSupplies and
other powerconverters.
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Symbol TestConditions Min. Typ. Max. Unit
V
F*
Tj=25°CI
F
=3A
1.5 V
T
j
= 100°C
1.05 1.4
I
R
**
T
j
=25°CV
R
=V
RRM
10 µA
T
j
= 100°C
0.2 0.6 mA
Pulse test : * tp = 380 µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
=25°CI
F
= 0.5A
I
R
=1A
Irr= 0.25A
25 ns
I
F
=1A
V
R
= 30V
dI
F
/dt= -15A/µs
60
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
VCC= 200V IF=3A Lp≤0.05µH
T
j
=100°CdI
F
/dt = -50A/µs
35 50 ns
I
RM
1.5 2 A
To evaluatethe conductionlossesuse thefollowing equation:
P = 1.1x I
F(AV)
+ 0.08 xI
F2(RMS)
TURN-OFF SWITCHINGCHARACTERISTICS (Withoutserie inductance)
Voltage (V)
200 300 400
Marking
C2 C3 C4
Lasermarking
Logoindicatescathode
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0.001 0.01 0.1 1 10
0
2
4
6
8
10
12
14
16
18
20
IM
t
=0.5
t(s)
I
M(A)
Tc=25 C
o
Tc=55 C
o
Tc=40 C
o
Fig.3 :
Non repetitive surge peak forward current
versusoverloadduration.
0.001 0.01 0.1 1 10
0.01
0.1
1
Zth(j-c) (tp. )
K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
K
Fig.4 :
Relative variation of thermal impedance
junctionto lead versuspulse duration.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
10
20
30
40
50
60
P=0.5W
T
I
M
=tp/T
tp
I
M(A)
P=1.5W
P=2.5W
Fig.2:
Peakcurrent versusform factor.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
=1
Fig.1 :
Low frequency power losses versus
averagecurrent.
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
1cm Cu
2
Rth(j-a)=65 C/W
o
Rth(j-a)=Rth(j-l)
Fig.6:
Averagecurrentversus ambient
temperature.(duty cycle: 0.5)
0.01 0.1 1 10
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
I
FM(A)
V
FM(V)
Tl=100 C
o
50
Fig.5:
Voltagedrop versusforward current.
(Maximum values)
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Fig.10:
Recoverycharge versusdIF/dt.
(typicalvalues)
Fig.9:
Peakreverse currentversus dIF/dt.
Fig.7:
Recoverytimeversus dI
F
/dt.
Fig.8:
Peakforward voltageversus dIF/dt.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a)
2
Scu(cm )
Printed circuit : epoxy (e=35um)
Fig.12 :
Thermal resistance junction to ambient
versuscoppersurface under eachlead.
Fig.11:
Dynamicparametersversus junction
temperature.
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PACKAGEMECHANICAL DATA
SMC
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 2.90 3.2 0.114 0.126
c 0.15 0.41 0.006 0.016
E 7.75 8.15 0.305 0.321
E1 6.60 7.15 0.260 0.281
E2 4.40 4.70 0.173 0.185
D 5.55 6.25 0.218 0.246
L 0.75 1.60 0.030 0.063
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change without notice. This publication supersedes and replaces all information previously supplied.
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2.0 4.2 2.0
3.3
FOOTPRINTDIMENSIONS
SMC
E
C
L
E1
D
A1
A2
b
SMBYT03
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