Datasheet SMBYT01-400 Datasheet (SGS Thomson Microelectronics)



FAST RECOVERY RECTIFIER DIODES

FEATURES

VERYLOWREVERSERECOVERYTIME
VERYLOWSWITCHINGLOSSES
LOW NOISETURN-OFF SWITCHING
SURFACEMOUNT DEVICE

DESCRIPTION

SMBYT01

Singlehighvoltagerectifiersuitedfor SwitchMode
PowerSuppliesand other power converters.

SMB

(Plastic)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

RMSforwardcurrent
Averageforwardcurrent

Tl=110°C

10 A

1A

δ = 0.5

I

FSM

Nonrepetitivesurge peak forwardcurrent

tp=10ms

30 A

sinusoidal

T

stg

Tj

Storageand junctiontemperaturerange

- 40 to + 150

- 40 to + 150°C°C

Symbol Parameter Value Unit

V

RRM

Repetitivepeak reversevoltage

400 V

THERMALRESISTANCE

Symbol Parameter Value Unit

R

th (j-l)

October 1999 - Ed: 2A

Junction-leads

25 °C/W

1/5

SMBYT01

STATIC ELECTRICALCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

V

F*

I

R

Pulse test : * tp = 380 µs, δ <2%

Tj=25°CI

= 100°C

T

j

**

=25°CV

T

j

T

= 100°C

j

** tp = 5 ms, δ <2%

=1A

F

=V

R

RRM

1.05 1.4

0.1 0.3 mA

1.5 V

10 µA

RECOVERYCHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr T

=25°CI

j

= 0.5A

F

=1A

I

R

I

=1A

F

= 30V

V

R

Irr= 0.25A

dI

/dt= -15A/µs

F

25 ns

60

TURN-OFF SWITCHINGCHARACTERISTICS (Without serieinductance)

Symbol Test Conditions Min. Typ. Max. Unit

t

IRM

I

RM

VCC= 200V IF=1A Lp≤0.05µH

=100°CdI

T

j

/dt = -50A/µs

F

35 50 ns

1.5 2 A

To evaluatethe conductionlossesuse thefollowing equation:
P = 1.1x I

Voltage(V)

Marking

F(AV)

+ 0.25 xI

F2(RMS)

400

B4

Lasermarking
Logoindicatescathode

2/5

SMBYT01

Fig. 1:

Low frequency power losses versus

averagecurrent.

P

F(av)(W)

1.8

1.6

=0.05

=0.1

=0.2

=0.5

1.4

1.2

1.0

0.8

T

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 3:

Non repetitive surge peak forward current

I

F(av)(A)

=tp/T

versusoverload duration.

I

M(A)

12

10

8

IM

t
=0.5

=1

Fig. 2:

35
30
25
20
15
10

tp

Fig. 4:

Peakcurrent versusformfactor.

I

M(A)

T

=tp/T

tp

P=0.5W

P=1.5W

5
0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

P=2.5W

Relative variation of thermal impedance

I

M

1.0

junctionto lead versuspulse duration.

K

Zth(j-c) (tp. )

K=

1

=0.2

Rth(j-c)

=0.5

6

o

Tc=25 C

4

o

2

t(s)

0

0.001 0.01 0.1 1 10

Fig.5:

Voltagedrop versusforward current.

Tc=75 C

o

Tc=110 C

(Maximum values)

V

FM(V)

3.0

2.7

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

0.0

0.01 0.1 1 10

o

Tl=100 C

I

FM(A)

20

=0.1

0.1

Single pulse

0.01

0.001 0.01 0.1 1 10

Fig. 6:

Average current versus ambient

tp(s)

T

=tp/T

temperature.(duty cycle: 0.5)

I

F(av)(A)

1.2

1.0

0.8

Rth(j-a)=75 C/W

1cm Cu

0.6

=0.5

0.4

T

0.2

0.0

=tp/T

0 20406080100120140160

tp

Tamb( C)

Rth(j-a)=Rth( j-l)

o

2

o

tp

3/5

SMBYT01

Fig.7:

Fig.9:

Recoverytime versusdI

F

/dt.

Peakreverse currentversusdIF/dt.

Fig. 8:

Fig. 10:

Peakforward voltageversusdIF/dt.

RecoverychargeversusdIF/dt.

(typicalvalues)

Fig.11:

Dynamicparametersversusjunction

temperature.

4/5

Fig. 12:

Thermal resistance junction to ambient

versuscopper surfaceundereachlead.

Rth(j-a)

100

90
80
70
60
50
40
30
20
10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Printed circuit : epoxy (e=35um)

2

Scu(cm )

PACKAGEMECHANICAL DATA

SMB (Plastic)

SMBYT01

DIMENSIONS

E1

E

C

L

FOOTPRINT DIMENSIONS

SMB (Plastic)

D

A1

A2

(inmillimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

b

Lasermarking
Weight=0.12g.
Logoindicatescathode

2.3

1.52 2.75

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1.52

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