Page 1
SMBTA 56M
Semiconductor Group
Au -11-19981
PNP Silicon AF Transistor
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA 06M (NPN)
VPW05980
1
2
3
5
4
Type Marking Ordering Code Pin Configuration Package
4 n.c. 5 = CSMBTA 56M Q62702-A3474 1 = B 2 = C 3 = E SCT-595s2G
Maximum Ratings
Parameter
Symbol UnitValue
Collector-emitter voltage 80 V
V
CEO
V
CBO
80Collector-base voltage
4Emitter-base voltage
V
EBO
DC collector current
I
C
500 mA
Peak collector current
I
CM
1 A
I
B
100Base current mA
Peak base current
I
BM
200
P
tot
1 W
Total power dissipation,
T
S
≤ 95 °C
°C150Junction temperature
T
j
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
≤110
K/W
Junction - soldering point
R
thJS
≤55
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
Page 2
SMBTA 56M
Semiconductor Group
Au -11-19982
Electrical Characteristics at
T
A
=25°C, unless otherwise specified
Parameter
ValuesSymbol Unit
typ. max.min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
80
V
(BR)CEO
-- V
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
- -80
V
(BR)CBO
V
(BR)EBO
4 --Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
V
Collector cutoff current
V
CB
= 80 V,
I
E
= 0
I
CBO
- - 100 nA
I
CBO
20Collector cutoff current
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
µA--
Collector cutoff current
V
CE
= 60 V,
I
B
= 0
- nA100-
I
CEO
DC current gain 1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
-
-
-
-
-
V
CEsat
- VCollector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 10 mA
0.25-
- 1.2Base-emitter voltage 1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE(ON)
- V
AC Characteristics
- 150 -Transition frequency
I
C
= 20 mA,
V
CE
= 5 V, f = 100 MHz
f
T
MHz
-Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
5 - pF
C
cb
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
Page 3
SMBTA 56M
Semiconductor Group
Au -11-19983
Total power dissipation
P
tot
= f (
T
A
*;
T
S
)
* Package mounted on epoxy
0 20 40 60 80 100 120
°C
150
TA,T
S
0
200
400
600
800
mW
1200
P
tot
T
S
0 20 40 60 80 100 120
°C
150
TA,T
S
0
200
400
600
800
mW
1200
P
tot
T
A
0 20 40 60 80 100 120
°C
150
TA,T
S
0
200
400
600
800
mW
1200
P
tot
Permissible Pulse Load
R
thJS
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
Page 4
SMBTA 56M
Semiconductor Group
Au -11-19984
DC current gain
h
FE
= f(
I
C
)
V
CE
= 1V
EHP00852
10
h
C
FE
10
1
10
-1 0
Ι
100 C
25 C
-50 C
1
10
2
10
3
10
mA
2
10
3
10
0
10
Collector-emitter saturation voltage
I
C
= f (V
CEsat
),
h
FE
= 10
0.0
10
EHP00850
CEsat
V
0
3
10
Ι
C
mA
1
10
2
10
C
5
5
100
25 C
-50C
0.5 V 1.0
Collector cutoff current
I
CBO
= f(
T
A
)
V
CB
= 20V
EHP00851
10
0
C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Collector current
I
C
= f (
V
BE
)
V
CE
= 1V
EHP00846
10
0
V
BE
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 C
25 C
-50 C
Semiconductor Group 4 1998-11-01
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