Page 1
SMBTA 42M
Semiconductor Group
Jun-18-19971
NPN Silicon High-Voltage Transistor
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA 92M (PNP)
VPW05980
1
2
3
5
4
Type Marking Ordering Code PackagePin Configuration
4=n.c. 5 = Cs1DSMBTA 42M 1 = B 2 = C 3 = E SCT-595Q62702-A1243
Maximum Ratings
Parameter
Symbol UnitValue
V
V
CEO
300Collector-emitter voltage
Collector-base voltage
V
CBO
300
6Emitter-base voltage
V
EBO
mADC collector current 500
I
C
100Base current
I
B
Total power dissipation,
T
S
≤ 83 °C
P
tot
W1.5
150 °CJunction temperature
T
j
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
≤100
K/W
Junction - soldering point
R
thJS
≤45
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
Page 2
SMBTA 42M
Semiconductor Group
Jun-18-19972
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol UnitValues
typ. max.min.
DC characteristics
V
(BR)CEO
300
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
- V-
V
(BR)CBO
300
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
--
V
(BR)EBO
6 -
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
-
I
CBO
- 100
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
nA-
I
CBO
- -
Collector-base cutoff current
V
CB
= 200 V,
T
A
= 150 °C
20 µA
- - 100
I
EBO
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
nA
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
h
FE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
- - 0.5 V
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
- - 0.9
AC Characteristics
- -
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V, f = 100 MHz
f
T
MHz50
-
Collector-base capacitance
V
CB
= 20 V, f = 1 MHz
C
cb
3 pF-
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
Page 3
SMBTA 42M
Semiconductor Group
Jun-18-19973
Total power dissipation
P
tot
= f (
T
A
*;
T
S
)
* Package mounted on epoxy
0 20 40 60 80 100 120
s
150
t
p
0
200
400
600
800
1000
1200
1400
mW
1800
P
tot
T
S
T
A
DC current gain
h
FE
= f (
I
C
)
V
CE
= 10V
EHP00844SMBTA 42/43
10
10
mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
Permissible Pulse Load
R
thJS
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
Page 4
SMBTA 42M
Semiconductor Group
Jun-18-19974
Collector cutoff current
I
CBO
= f (
T
A
)
V
CB
= 160V
EHP00842SMBTA 42/43
10
0
C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Collector current
I
C
= f (
V
BE
)
V
CE
= 10 V
EHP00843SMBTA 42/43
10
0
V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
Semiconductor Group 4 1998-11-01
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