Datasheet SMBT6428, SMBT6429 Datasheet (Siemens)

NPN Silicon Transistors SMBT 6428

SMBT 6429

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

Type Ordering Code

SMBT 6428
SMBT 6429

Marking

s1K
s1L

(tape and reel)

Q68000-A8321
Q68000-A8322

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

SMBT 6428 SMBT 6429

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Total power dissipation, T

S = 71 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

CE0 V

50 45
60 55

EB0

6
200
330
150

stg

– 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 310 K/W

Junction - soldering point Rth JS ≤ 240

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I
I

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBT 6428

SMBT 6429

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA SMBT 6428

SMBT 6429

Collector-base breakdown voltage

C = 10 µA SMBT 6428

(BR)CB0

V

SMBT 6429

Emitter-base breakdown voltage

E = 1 µA

Collector-base cutoff current

CB = 30 V, IE = 0

V

CB = 30 V, IE = 0, TA = 150 ˚C

V

CE = 30 V, IB = 0

V

Emitter-base cutoff current

EB = 5 V, IC = 0

V

V

(BR)EB0 6––

CB0

I

I

CE0 – – 100

I

EB0 ––10

50
45

60
55

–
–

–
–

–
–

–
–

–
–

–
–

10
10

hFE

C = 10 µA, VCE = 5 V SMBT 6428

SMBT 6429

C = 100 µA, VCE = 5 V SMBT 6428

SMBT 6429

C = 1 mA, VCE = 5 V SMBT 6428

SMBT 6429

C = 10 mA, VCE = 5 V SMBT 6428

SMBT 6429

Collector-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter voltage

C = 1 mA, VCE = 5 V

1)

V

BE(on) 0.56 – 0.66

250
500
250
500
250
500
250
500

–
–

–
–
–
–
–
–
–
–

–
–

–
–
650
1250
–
–
–
–

0.2

0.6

VCollector-emitter breakdown voltage

nA

µA

nACollector cutoff current

–DC current gain

VVCEsat

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2%.

Semiconductor Group 2

Electrical Characteristics

I

A = 25 ˚C, unless otherwise specified.

at T

AC characteristics

SMBT 6428

SMBT 6429

UnitValuesParameter Symbol

min. typ. max.

C = 5 mA, VCE = 5 V, f = 100 MHz

CB = 10 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

f

T 100 – 700

C

obo ––3

C

ibo ––15

MHzTransition frequency

pFOutput capacitance

Semiconductor Group 3

SMBT 6428

SMBT 6429

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance C

EB0 = f (VEB0)

Permissible pulse load P

tot max/Ptot DC = f (tp)

Transition frequency f

CE = 5 V

V

T = f (IC)

Semiconductor Group 4

SMBT 6428

SMBT 6429

Base-emitter saturation voltage

C = f (VBEsat), hFE = 40

I

Collector-emitter saturation voltage

C = f (VCEsat), hFE = 40

I

Collector current I

CE =1V

V

C = f (VBE)

DC current gain h

CE =1V

V

FE = f (IC)

Semiconductor Group 5

Collector cutoff current ICB0 = f (TA)

V

CB = 30 V

SMBT 6428

SMBT 6429

Semiconductor Group 6