Page 1
SMBT 3904S
Semiconductor Group
Sep-07-19981
NPN Silicon Switching Transistor Array
• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
• Complementary type: SMBT 3906S (PNP)
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code PackagePin Configuration
1/4=E1/E2s1ASMBT 3904S 2/5=B1/B2 3/6=C2/C1 SOT-363Q62702-A1201
Maximum Ratings
UnitParameter Symbol Value
Collector-emitter voltage
V
CEO
V40
60Collector-base voltage
V
CBO
Emitter-base voltage 6
V
EBO
DC collector current
I
C
mA200
250 mW
Total power dissipation,
T
S
= 115 °C
P
tot
°C
T
j
Junction temperature 150
Storage temperature
T
st
g
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
≤275
K/W
Junction - soldering point
R
thJS
≤140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
Page 2
SMBT 3904S
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
=25°C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
V40 - -
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
V
(BR)CBO
60 - -
V
(BR)EBO
- -6Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
nA
I
CBO
- - 50
DC current gain 1)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
CEsat
-
-
-
-
0.2
0.3
V
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
BEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
Page 3
SMBT 3904S
Semiconductor Group
Sep-07-19983
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.typ.min.
AC Characteristics
f
T
300 - MHz-Transition frequency
I
C
= 10 mA,
V
CE
= 20 V, f = 100 MHz
C
cb
- -Collector-base capacitance
V
CB
= 5 V, f = 1 MHz
pF4
C
eb
- - 8Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
h
11e
1 10-Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V, f = 1 kHz
kΩ
h
12e
0.5 8 10
-4
-Open-circuit reverse voltage transfer ratio
I
C
= 1 mA,
V
CE
= 10 V, f = 1 kHz
h
21e
100 -Short-circuit forward current transfer ratio
I
C
= 1 mA,
V
CE
= 10 V, f = 1 kHz
-400
h
22e
1 - 40
µs
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V, f = 1 kHz
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
R
S
= 1 kΩ,
f
= 1 kHz, ∆ f = 200 Hz
F
- - 5 dB
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
d
- - 35 ns
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
r
- - 35
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1mA
t
stg
- - 200
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2 =
1mA
t
f
- - 50
Semiconductor Group 3 1998-11-01
Page 4
SMBT 3904S
Semiconductor Group
Sep-07-19984
Test circuit
Delay and rise time
EHN00061
275
10 k
+3.0 V
0
-0.5 V
<4.0 pF
C
+10.9 V
D
= 2%300 ns
<1.0 ns
Ω
Ω
Storage time and fall time
EHN00062
275
10
+3.0 V
0
-9.1
<4.0 pF
C
+10.9 V
D
= 2%
1N916
<1.0
t
1
µs50010
t
1
Ω
ΩVk
ns
<<
Semiconductor Group 4 1998-11-01
Page 5
SMBT 3904S
Semiconductor Group
Sep-07-19985
Total power dissipation
P
tot
= f (
T
A
*;
T
S
)
* Package mounted on epoxy
0 20 40 60 80 100 120
°C
150
TA,T
S
0
50
100
150
200
mW
300
P
tot
Kei
n
T
A
T
S
Permissible Pulse Load
R
thJS
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
= f (
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 1998-11-01
Page 6
SMBT 3904S
Semiconductor Group
Sep-07-19986
Saturation voltage
I
C
= f (
V
BEsat
,
V
CEsat
)
h
FE
= 10
EHP00756
2
0
V
BE sat
C
10
1
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0
1.2
CE sat
V
,
5
10
2
V
BE
V
CE
DC current gain
h
FE
= f (
I
C
)
V
CE
= 10V, normalized
EHP00765
10
10
mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 C
25 C
-55 C
55
2
Short-circuit forward current
transfer ratio
h
21e
= f(
I
C
)
V
CE
= 10V, f = 1MHz
EHP00759
10
10
mA
h
C
5
21e
10
3
2
10
1
5
10 10
-1 0 1
Ι
5
Open-circuit output admittance
h
22e
= f (
I
C
)
V
CE
= 10V, f = 1MHz
EHP00760
10
10
mA
h
C
5
22e
10
2
1
10
0
5
10 10
-1 0 1
Ι
5
sµ
Semiconductor Group 6 1998-11-01
Page 7
SMBT 3904S
Semiconductor Group
Sep-07-19987
Storage time
t
stg
= f(
I
C
)
EHP00762
10
mA
t
C
s
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
10
25 C
125 C
10
= 20
FE
h
Delay time
t
d
= f (
I
C
)
Rise time
t
r
= f (
I
C
)
EHP00761
10
mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
r
t
t
d
,
3
10
d
t
10
2
10
3
= 3 V
CC
V
0 V
V
= 2 V
BE
40 V
15 V
h
FE
= 10
Fall time
t
f
= f (
I
C
) Rise time
t
r
= f (
I
C
)
EHP00764
10
mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
25 C
125 C
CC
V
= 40 V
= 10
FE
h
Semiconductor Group 7 1998-11-01
Page 8
SMBT 3904S
Semiconductor Group
Sep-07-19988
Input impedance
h
11e
= f (
I
C
)
V
CE
= 10V, f = 1kHz
10
EHP00757
-1 1
10mA
-1
10
2
10
5
5
10
0
10
0
C
11e
h
Ι
1
10
5
Ω
k
Open-circuit reverse voltage
transfer ratio
h
12e
= f (
I
C
)
V
CE
= 10V, f = 1kHz
EHP00758
10
mA
h
C
12e
10
-5
5
10 10
-1 0 1
Ι
5
10
-4
10
-3
Semiconductor Group 8 1998-11-01
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