Page 1
NPN Silicon Switching Transistor SMBT 3904
● High DC current gain: 0.1 mA to 100 mA
● Low collector-emitter saturation voltage
● Complementary type: SMBT 3906 (PNP)
Type Ordering Code
SMBT 3904 Q68000-A4416s1A SOT-23
Marking
(tape and reel)
Pin Configuration
1 2 3
B E C
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 40 V
Collector-base voltage VCB0 60
Emitter-base voltage VEB0 6
Collector current I
Total power dissipation, TS =69˚C
Junction temperature T
Storage temperature range T
C 200 mA
tot 330 mW
P
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 315 K/W
1)
Junction - soldering point Rth JS ≤ 245
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SMBT 3904
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
V
(BR)CE0 40 – –
C = 1 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 10 µA
CB = 30 V
V
V
(BR)CB0 60 – –
V
(BR)EB0 6––
I
CB0 ––50
hFE
C = 100 µA, VCE = 1 V
C = 1 mA, VCE = 1 V
C = 10 mA, VCE = 1 V
C = 50 mA, VCE = 1 V
C = 100 mA, VCE = 1 V
C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA
1)
1)
1)
1)
1)
V
V
CEsat
BEsat
40
70
100
60
30
–
–
0.65
–
–
–
–
–
–
–
–
–
–
–
–
300
–
–
0.2
0.3
0.85
0.95
VCollector-emitter breakdown voltage
nACollector-base cutoff current
–DC current gain
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
SMBT 3904
UnitValuesParameter Symbol
min. typ. max.
f
T 300 – –
C = 10 mA, VCE = 20 V, f = 100 MHz
C
obo ––4
CB = 5 V, f = 1 MHz
V
Input capacitance
EB = 0.5 V, f = 1 MHz
V
C = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 100 µA, VCE = 5 V, RS = 1 kΩ, f = 1 kHz
CC = 3 V, IC = 10 mA, IB1 = 1 mA
V
BE(off) = 0.5 V
V
Delay time
Rise time
CC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
V
Storage time
Fall time
(see diagrams)
C
ibo ––8
h
11e 1–10
h
12e 0.5 – 8
h
21e 100 – 400
h
22e 1–40
F ––5
d
t
tr
tstg
tf
–
–
–
–
–
–
–
–
35
35
200
50
MHzTransition frequency
pFOutput capacitance
kΩInput impedance
10
–Short-circuit forward current transfer ratio
µSOpen-circuit output admittance
dBNoise figure
ns
ns
ns
ns
–4
Semiconductor Group 3
Page 4
Test circuits
Delay and rise time
SMBT 3904
Storage and fall time
Semiconductor Group 4
Page 5
SMBT 3904
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Saturation voltage IC = f (VBE sat, VCE sat)
Permissible pulse load P
tot max / Ptot DC = f (tp)
DC current gain h
CE = 10 V, normalized
V
FE = f (IC)
Semiconductor Group 5
Page 6
SMBT 3904
Short-circuit forward current
transfer ratio h
CE = 10 V, f = 1 MHz
V
21e = f (IC)
Open-circuit output admittance
22e = f (IC)
h
CE = 10 V, f = 1 MHz
V
Delay time td = f (IC)
Rise time t
r = f (IC)
Storage time tstg = f (IC)
Semiconductor Group 6
Page 7
SMBT 3904
Fall time tf = f (IC)
Rise time tr = f (IC)
Input impedance
h11e = f (IC)
CE = 10 V, f = 1 kHz
V
Open-circuit reverse voltage
transfer ratio h12e = f (IC)
CE = 10 V, f = 1 kHz
V
Semiconductor Group 7
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