Page 1
Semiconductor Group 1
PNP Silicon Switching Transistors SMBT 2907
SMBT 2907 A
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 2907
SMBT 2907 A
Q68000-A6501
Q68000-A6474
s2B
s2F
SOT-23
1 2 3
B E C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 V
Collector current IC mA
Junction temperature Tj ˚C
Total power dissipation, T
S = 77 ˚C Ptot mW
Storage temperature range T
stg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 290 K/W
600
330
150
– 65 … + 150
Emitter-base voltage V
EB0
40 60
SMBT 2907 SMBT 2907 A
Junction - soldering point Rth JS ≤ 220
60
5
● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: SMBT 2222,
SMBT 2222 A (NPN)
5.91
Page 2
Semiconductor Group 2
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C = 150 mA, IB = 15 mA
I
C = 500 mA, IB = 50 mA
Collector-emitter saturation voltage
1)
I
C = 150 mA, IB = 15 mA
I
C = 500 mA, IB = 50 mA
VCollector-emitter breakdown voltage
I
C = 10 mA SMBT 2907
SMBT 2907 A
V
(BR)CE0
40
60
–
–
–
–
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA SMBT 2907
SMBT 2907 A
V
(BR)CB0
60
60
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µA
V
(BR)EB0 5––
nAEmitter cutoff current
V
EB = 3 V
I
EB0 ––10
nA
nA
µA
µA
Collector cutoff current
VCB = 50 V SMBT 2907
V
CB = 50 V SMBT 2907 A
V
CB = 50 V, TA = 150 ˚C SMBT 2907
V
CB = 50 V, TA = 150 ˚C SMBT 2907 A
I
CB0
–
–
–
–
–
–
–
–
20
10
20
10
–
DC current gain
1)
I
C = 100 µA, VCE = 10 V SMBT 2907
SMBT 2907 A
I
C = 1 mA, VCE = 10 V SMBT 2907
SMBT 2907 A
I
C = 10 mA, VCE = 10 V
1)
SMBT 2907
SMBT 2907 A
I
C = 150 mA, VCE = 10 V
1)
SMBT 2907
SMBT 2907 A
I
C = 500 mA, VCE = 10 V
1)
SMBT 2907
SMBT 2907 A
h
FE
35
75
50
100
75
100
100
100
30
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
300
–
–
VVCEsat
–
–
–
–
0.4
1.6
VBEsat
–
–
–
–
1.3
2.6
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Page 3
Semiconductor Group 3
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
Test circuits
Delay and rise time Storage and fall time
MHzTransition frequency
I
C = 20 mA, VCE = 20 V, f = 100 MHz
f
T 200 – –
AC characteristics
pFOutput capacitance
V
CB = 10 V, f = 1 MHz
C
obo ––8
UnitValuesParameter Symbol
min. typ. max.
ns
ns
ns
ns
V
CC = 30 V, IC = 150 mA, IB1 = 15 mA
Delay time
Rise time
V
CC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA
Storage time
Fall time
t
d
tr
tstg
tf
–
–
–
–
–
–
–
–
10
40
80
30
Input capacitance
V
EB = 0.5 V, f = 1 MHz
C
ibo ––30
Page 4
Semiconductor Group 4
SMBT 2907
SMBT 2907 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load P
tot max/Ptot DC = f (tp)
Collector-base capacitance CCB = f (VCB)
f = 1 MHz
Transition frequency f
T = f (IC)
V
CE = 20 V
Page 5
Semiconductor Group 5
SMBT 2907
SMBT 2907 A
Saturation voltage IC = f (VBEsat, VCEsat)
h
FE =10
Storage time t
stg = f (IC)
Delay time td = f (IC)
Rise time t
r = f (IC)
h
FE =10
Fall time tf = f (IC)
SMBT 2907
SMBT 2907 A
Page 6
Semiconductor Group 6
SMBT 2907
SMBT 2907 A
DC current gain hFE = f (IC)
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