Page 1
NPN Silicon Switching Transistors SMBT 2222
SMBT 2222 A
● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: SMBT 2907,
SMBT 2907 A (PNP)
Type Ordering Code
SMBT 2222
SMBT 2222 A
Marking
s1B
s1P
(tape and reel)
Q68000-A6481
Q68000-A6473
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
SMBT 2222 SMBT 2222 A
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Total power dissipation, T
S = 77 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
CE0 V
30 40
60 75
EB0
56
600
330
150
stg
– 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 290 K/W
Junction - soldering point Rth JS ≤ 220
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics
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A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBT 2222
SMBT 2222 A
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA SMBT 2222
SMBT 2222 A
Collector-base breakdown voltage
C = 10 µA SMBT 2222
SMBT 2222 A
Emitter-base breakdown voltage
E = 10 µA SMBT 2222
SMBT 2222 A
Collector cutoff current
(BR)CB0
V
(BR)EB0
V
I
CB0
VCB = 50 V SMBT 2222
CB = 60 V SMBT 2222 A
V
CB = 50 V, TA = 150 ˚C SMBT 2222
V
CB = 60 V, TA = 150 ˚C SMBT 2222 A
V
EB = 3 V
V
C = 100 µA, VCE = 10 V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 150 mA, VCE = 1 V
C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V
1)
1)
1)
1)
SMBT 2222
SMBT 2222 A
C = 10 mA, VCE = 10 V,
A = 55 ˚C SMBT 2222 A
T
Collector-emitter saturation voltage
C = 150 mA, IB = 15 mA SMBT 2222
1)
SMBT 2222 A
C = 500 mA, IB = 50 mA SMBT 2222
I
EB0 ––10
h
FE
SMBT 2222 A
Base-emitter saturation voltage
C = 150 mA, IB = 15 mA SMBT 2222
C = 500 mA, IB = 50 mA SMBT 2222
1)
SMBT 2222 A
VBEsat
SMBT 2222 A
30
40
60
75
5
6
–
–
–
–
35
50
75
50
100
30
40
35
–
–
–
–
–
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
10
10
10
10
–
–
–
–
300
–
–
–
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter cutoff current
–DC current gain
VVCEsat
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
Page 3
Electrical Characteristics
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A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
SMBT 2222
SMBT 2222 A
UnitValuesParameter Symbol
min. typ. max.
T
f
C = 20 mA, VCE = 20 V, f = 100 MHz
SMBT 2222
SMBT 2222 A
C
obo ––8
VCB = 10 V, f = 1 MHz
Input capacitance
EB = 0.5 V, f = 1 MHz
V
C
ibo
SMBT 2222
SMBT 2222 A
250
300
–
–
–
–
–
–
–
–
30
25
h11e
C = 1 mA, VCE = 10 V, f = 1 kHz
SMBT 2222 A
C = 10 mA, VCE = 10 V, f = 1 kHz
SMBT 2222 A
Open-circuit reverse voltage transfer ratio
C = 1 mA, VCE = 10 V, f = 1 kHz
SMBT 2222 A
C = 10 mA, VCE = 10 V, f = 1 kHz
h12e
SMBT 2222 A
2
0.25
–
–
–
–
–
–
8
1.25
8.0
4.0
MHzTransition frequency
pFOutput capacitance
kΩShort-circuit input impedance
10
–4
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
SMBT 2222 A
SMBT 2222 A
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
SMBT 2222
SMBT 2222 A
E = 20 mA, VCB = 10 V, f = 31.8 MHz
SMBT 2222 A
h21e
50
75
–
–
300
375
h22e
5
25
b'Cc – – 150
r
–
–
35
200
F – – 4.0
C = 100 µA, VCE = 10 V, RS = 1 kΩ
f = 1 kHz SMBT 2222 A
Semiconductor Group 3
–Short-circuit forward current transfer ratio
µSOpen-circuit output admittance
psCollector-base time constant
dBNoise figure
Page 4
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
SMBT 2222
SMBT 2222 A
Parameter Symbol
min. typ. max.
AC characteristics (continued)
CC = 30 V, IC = 150 mA, IB1 = 15 mA
V
BE(off) = 0.5 V
V
Delay time
Rise time
CC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
V
Storage time
Fall time
d
t
tr
tstg
tf
–
–
–
–
–
–
–
–
Test circuits
Delay and rise time Storage and fall time
10
25
225
60
UnitValues
ns
ns
ns
ns
Oscillograph: R > 100 Ω
C < 12 pF
r < 5ns
t
Semiconductor Group 4
Page 5
SMBT 2222
SMBT 2222 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance Ccb = f (VCB)
f = 1 MHz
Permissible pulse load P
tot max/Ptot DC = f (tp)
Transition frequency f
CE = 20 V
V
T = f (IC)
Semiconductor Group 5
Page 6
SMBT 2222
SMBT 2222 A
Saturation voltage IC = f (VBEsat, VCEsat)
FE =10
h
DC current gain hFE = f (IC)
CE =10V
V
Delay time t
Rise time t
d = f (IC)
r = f (IC)
Storage time t
Fall time t
stg = f (IC)
f = f (IC)
Semiconductor Group 6
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