Datasheet SMBT2222A, SMBT2222 Datasheet (Siemens)

NPN Silicon Switching Transistors SMBT 2222

SMBT 2222 A

● High DC current gain: 0.1 mA to 500 mA

● Low collector-emitter saturation voltage

● Complementary types: SMBT 2907,

SMBT 2907 A (PNP)

Type Ordering Code

SMBT 2222
SMBT 2222 A

Marking

s1B
s1P

(tape and reel)

Q68000-A6481
Q68000-A6473

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

SMBT 2222 SMBT 2222 A

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Total power dissipation, T

S = 77 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

CE0 V

30 40
60 75

EB0

56

600
330
150

stg

– 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 290 K/W

Junction - soldering point Rth JS ≤ 220

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I
I
I
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I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBT 2222

SMBT 2222 A

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA SMBT 2222

SMBT 2222 A

Collector-base breakdown voltage

C = 10 µA SMBT 2222

SMBT 2222 A

Emitter-base breakdown voltage

E = 10 µA SMBT 2222

SMBT 2222 A

Collector cutoff current

(BR)CB0

V

(BR)EB0

V

I

CB0

VCB = 50 V SMBT 2222

CB = 60 V SMBT 2222 A

V

CB = 50 V, TA = 150 ˚C SMBT 2222

V

CB = 60 V, TA = 150 ˚C SMBT 2222 A

V

EB = 3 V

V

C = 100 µA, VCE = 10 V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 150 mA, VCE = 1 V
C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V

1)

1)

1)

1)

SMBT 2222
SMBT 2222 A

C = 10 mA, VCE = 10 V,

A = 55 ˚C SMBT 2222 A

T

Collector-emitter saturation voltage

C = 150 mA, IB = 15 mA SMBT 2222

1)

SMBT 2222 A

C = 500 mA, IB = 50 mA SMBT 2222

I

EB0 ––10

h

FE

SMBT 2222 A

Base-emitter saturation voltage

C = 150 mA, IB = 15 mA SMBT 2222
C = 500 mA, IB = 50 mA SMBT 2222

1)

SMBT 2222 A

VBEsat

SMBT 2222 A

30
40

60
75

5
6

–
–
–
–

35
50
75
50
100
30
40

35

–
–
–
–

–

0.6
–
–

–
–

–
–

–
–

–
–
–
–

–
–
–
–
–
–
–

–

–
–
–
–

–
–
–
–

–
–

–
–

–
–

10
10
10
10

–
–
–
–
300
–
–

–

0.4

0.3

1.6

1.0

1.3

1.2

2.6

2.0

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter cutoff current

–DC current gain

VVCEsat

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2

Electrical Characteristics

I

I

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A = 25 ˚C, unless otherwise specified.

at T

AC characteristics

SMBT 2222

SMBT 2222 A

UnitValuesParameter Symbol

min. typ. max.

T

f

C = 20 mA, VCE = 20 V, f = 100 MHz

SMBT 2222
SMBT 2222 A

C

obo ––8

VCB = 10 V, f = 1 MHz
Input capacitance

EB = 0.5 V, f = 1 MHz

V

C

ibo

SMBT 2222
SMBT 2222 A

250
300

–
–

–
–

–
–

–
–

30
25

h11e

C = 1 mA, VCE = 10 V, f = 1 kHz

SMBT 2222 A

C = 10 mA, VCE = 10 V, f = 1 kHz

SMBT 2222 A

Open-circuit reverse voltage transfer ratio

C = 1 mA, VCE = 10 V, f = 1 kHz

SMBT 2222 A

C = 10 mA, VCE = 10 V, f = 1 kHz

h12e

SMBT 2222 A

2

0.25

–
–

–
–

–
–

8

1.25

8.0

4.0

MHzTransition frequency

pFOutput capacitance

kΩShort-circuit input impedance

10

–4

C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz

SMBT 2222 A
SMBT 2222 A

C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz

SMBT 2222
SMBT 2222 A

E = 20 mA, VCB = 10 V, f = 31.8 MHz

SMBT 2222 A

h21e

50
75

–
–

300
375

h22e

5
25

b'Cc – – 150

r

–
–

35
200

F – – 4.0

C = 100 µA, VCE = 10 V, RS = 1 kΩ

f = 1 kHz SMBT 2222 A

Semiconductor Group 3

–Short-circuit forward current transfer ratio

µSOpen-circuit output admittance

psCollector-base time constant

dBNoise figure

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

SMBT 2222

SMBT 2222 A

Parameter Symbol

min. typ. max.

AC characteristics (continued)

CC = 30 V, IC = 150 mA, IB1 = 15 mA

V

BE(off) = 0.5 V

V

Delay time
Rise time

CC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA

V

Storage time
Fall time

d

t
tr

tstg
tf

–
–

–
–

–
–

–
–

Test circuits
Delay and rise time Storage and fall time

10
25

225
60

UnitValues

ns
ns

ns
ns

Oscillograph: R > 100 Ω

C < 12 pF

r < 5ns

t

Semiconductor Group 4

SMBT 2222

SMBT 2222 A

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Collector-base capacitance Ccb = f (VCB)
f = 1 MHz

Permissible pulse load P

tot max/Ptot DC = f (tp)

Transition frequency f

CE = 20 V

V

T = f (IC)

Semiconductor Group 5

SMBT 2222

SMBT 2222 A

Saturation voltage IC = f (VBEsat, VCEsat)

FE =10

h

DC current gain hFE = f (IC)

CE =10V

V

Delay time t
Rise time t

d = f (IC)
r = f (IC)

Storage time t
Fall time t

stg = f (IC)
f = f (IC)

Semiconductor Group 6