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SCHOTTKY DIE SPECIFICATION TYPE: SMBR8100
100 V 8 A ( Super Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 105 Volt
Ir=0.5mA (for dice form)
IFAV Amp
VF MAX 0.9 Volt
IR MAX 0.07 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjeced to change without notice.
DIM um
2
Mil
2
A 2220 87.40
B 2120 83.5
C 2140 84.3
D 254 10
305 12
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
VR= 100 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
150
-65 to +125
-65 to +125
0.91 @ 8 Amperes, Ta=25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.08
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
100
8
B
C
A
Top-side Metal
D
SiO2 Passivation
P+ Guard Ring
Back-side Metal
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