Datasheet SMBJ100A, SMBJ10A, SMBJ100CA, SMBJ10CA, SMBJ11A Datasheet (Fairchild Semiconductor)

SMBJ5.0(C)A - SMBJ170(C)A

Features

•

Glass passivated junction.

• 600W Peak Pulse Power capability on

10/1000 µs waveform.

• Excellent clamping capability.

• Low incremental surge resistance.

• Fast response time; typically less

than 1.0 ps from 0 volts to BV for
unidirectional and 5.0 ns for
bidirectional.

• Typical I

less than 1.0 µA above 10V.

R

SMB/DO-214AA

COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY.
NO COLOR BAND ON BIDIRECTIONAL

DEVICES.

0.083 (2.108)

0.075 (1.905

0.050 (1.270)

0.030 (0.762)

SMBJ5.0(C)A - SMBJ170(C)A

0.185 (4.699)

0.160 (4.064)

)

2

0.220 (5.588)

0.200 (5.080)

0.008 (0.203)

0.004 (0.102)

0.155 (3.937)

1

0.130 (3.302)

0.096 (2.438)

0.083 (2.108)

0.012 (0.305)

0.006 (0.152)

DEVICES FOR BIPOLAR APPLICA TIONS

- Bidirectional types use CA suffix.

- Electrical Characteristics apply in both directions.

600 Watt Transient Voltage Suppressors

Absolute Maximum Ratings* T

Symbol Parameter Value Units

P

PPM

I

PPM

i

f(surge)

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.

Peak Pulse Power Dissipation on 10/1000 µs waveform
Peak Pulse Current on 10/1000 µs waveform
Peak Forward Surge Current

superimposed on rated load (JEDEC m ethod)

Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150

= 25°C unless otherwise noted

A

(Note 1)

minimum 600 W

see table A

100 A

°
°

C
C

2000 Fairchild Semiconductor International

SMBJ5.0(C)A-SMBJ170(C)A, Rev. c

Transient Voltage Supressors

(continued)

SMBJ5.0(C)A - SMBJ170(C)A

Electrical Characteristics T

Uni-directional

Bi-direc tional (C)

Device

Part

Marking

Reverse

Stand-off Voltage

V

(V)

RWM

= 25°C unless otherwise noted

A

Breakdown Voltage
V
min max

(V)

BR

Test
Curre nt

(mA )

IT

Max Clamping
Voltage @IPPM
VC (V)

Max Peak Pu lse
Surg e Current
I

(A )

PPM

Max Reverse
Leakage V
IR (uA )*

SMBJ5.0 (C)A KE(AE) 5.0 6 .4 0 7.0 10 9.2 6 5 .2 80 0
SMBJ6.0 (C)A KG( AG) 6.0 6 .6 7 7.37 10 10.3 5 8.3 800
SMBJ6.5 (C)A KK(AK) 6.5 7 .2 2 7.98 10 11.2 5 3.6 500
SMBJ7.0 (C)A KM(A M) 7.0 7.78 8 .60 10 12.0 5 0 .0 20 0
SMBJ7.5 (C)A KP(AP) 7.5 8.33 9 . 2 1 1 12 .9 4 6.5 100
SMBJ8.0 (C)A K R(AR) 8 .0 8.8 9 9 . 8 3 1 13 .6 4 4.1 50
SMBJ8.5 (C)A KT( A T) 8.5 9 .4 4 1 0.4 1 14 .4 4 1 .7 20
SMBJ9.0 (C)A KV(AV) 9.0 10.0 1 1 . 1 1 1 5 .4 39.0 10
SMBJ1 0 (C)A KX ( A X ) 10 11.1 1 2 .8 1 17 .0 35.3 5
SMBJ1 1 (C)A KZ(A Z ) 1 1 12.2 1 3 .5 1 18 .2 33 .0 5
SMBJ1 2 (C)A LE(B E ) 1 2 13.3 1 4 .7 1 19 .9 30 .2 5
SMBJ1 3 (C)A LG(BG) 1 3 14.4 1 5 .9 1 21 .5 27 .9 5
SMBJ1 4 (C)A LK(B K ) 1 4 15.6 1 7 .2 1 23 .2 25 .9 5
SMBJ1 5 (C)A LM(B M) 15 16 .7 1 8 .5 1 24 .4 24.6 5
SMBJ16(C)A LP(LM) 16 17.8 19.7 1 26.0 23.1 5
SMBJ1 7 (C)A LR (B R) 17 18.9 2 0 .9 1 27 .6 21 .7 5
SMBJ1 8 (C)A LT(BT ) 18 20.0 2 2 .1 1 29 .2 20.5 5
SMBJ2 0 (C)A LV(B V ) 2 0 22.2 2 4 .5 1 32 .4 18 .5 5
SMBJ2 2 (C)A LX(B X) 22 24.4 2 6 .9 1 35 .5 16.9 5
SMBJ2 4 (C)A LZ(BZ ) 24 26.7 2 9 .5 1 38 .9 15.4 5
SMBJ2 6 (C)A ME(CE) 26 28.9 3 1 .9 1 42 .1 14.3 5
SMBJ2 8 (C)A M G(CG) 28 31.1 3 4 .4 1 45 .4 13.2 5
SMBJ3 0 (C)A MK(CK) 30 33.3 3 6 .8 1 48 .4 12.4 5
SMBJ3 3 (C)A MM (C M) 33 36.7 4 0 .6 1 53 .3 11.3 5
SMBJ3 6 (C)A MP(CP) 36 40.0 4 4 .2 1 58 .1 10.3 5
SMBJ40 (C)A M R(C R) 40 44 .4 49.1 1 6 4 .5 9.3 5
SMBJ43 (C)A MT (CT) 43 47.8 5 2 . 8 1 6 9 .4 8.6 5
SMBJ45 (C)A MV(C V) 45 5 0 .0 5 5.3 1 72 .7 8.3 5
SMBJ48 (C)A MX(C X) 48 5 3 .3 5 8.9 1 77 .4 7.8 5
SMBJ51 (C)A MZ (CZ) 51 56.7 6 2 . 7 1 8 2 .4 7.3 5
SMBJ54 (C)A NE( DE) 54 60.0 6 6 . 3 1 8 7 .1 6.9 5
SMBJ58 (C)A N G(D G) 58 64 .4 71.2 1 9 3 .6 6.4 5
SMBJ60 (C)A NK( DK) 60 66.7 7 3 . 7 1 9 6 .8 6.2 5
SMBJ64 (C)A NM ( DM ) 64 71.1 78.6 1 103 .0 5.8 5
SMBJ70 (C)A NP( DP) 70 77.8 8 6 . 0 1 113 .0 5.3 5
SMBJ75 (C)A NR(D R) 75 8 3 .3 9 2.1 1 121 .0 5.0 5
SMBJ78 (C)A N T(D T ) 78 86.7 9 5.8 1 126 .0 4.8 5
SMBJ85(C)A NV(DV) 85 94.4 104.0 1 137.0 4.4 5
SMBJ90(C)A NX(DX ) 90 100.0 111.0 1 146.0 4.1 5
SMBJ100(C)A NZ(DZ) 100 111.0 123.0 1 162.0 3.7 5
SMBJ110(C)A PE(EE) 110 122.0 135.0 1 177.0 3.4 5
SMBJ120(C)A PG(EG) 120 133.0 147.0 1 193.0 3.1 5
SMBJ130(C)A PK(EK) 130 144.0 159.0 1 209.0 2.9 5
SMBJ150(C)A PM(EM) 150 167.0 185.0 1 243.0 2.5 5
SMBJ160(C)A PP(EP) 160 178.0 197.0 1 259.0 2.3 5
SMBJ170(C)A PR(ER) 170 189.0 209.0 1 275.0 2.2 5

RWM

* For bidirectional parts with V

<10V, the IR max limit is doubled.

RWM

SMBJ5.0(C)A-SMBJ170(C)A, Rev. c

T ypical Characteristics

SMBJ5.0(C)A - SMBJ170(C)A

Transient Voltage Supressors

(continued)

Peak Pulse Power Rating Curve

100

T = 25 C

º

A

10

1

PULSE POWER (kW)

0.1

0.0001 0.001 0.01 0.1 1 10

PULSE WIDTH (ms)

Pulse Waveform

150

tf = 10µsec
Peak Value

Ippm

100

50

PEAK PULSE CURRENT (%)

td

0

01234

T = 25 C

º

A

Pulse Width (td) is Defined
as the Poin t W here the Peak
Current Decays to 50% of Ipp

Half Value-Ipp

2

10/100 0µsec Wa veform
as Defined by R.E.A.

e-kt

TIME (ms)

Pulse Deratin g Curve

100

75

50

PULSE PO WER (%)

25

0

0 25 50 75 100 125 150 175 200

AMBIE N T TEMPERA TURE ( C)

º

Junction Capacitance

6000
4000

2000
1000

500

200
100

CAPACITAN CE (p F)

50

Measured at
Stand-Off
Voltage (V mw)

20
10

1 5 10 50 100 200

REVERSE VOLTAGE (V)

T = 25 C

A

f = 1.0 MHz
Visg = 50m Vp-p

Measured at
Zero Bias

º

Non-Repetitive Surge Curre nt

200

100

50

20

FORWARD SURGE CURRENT (A)

10

12 51020 50100

NUMBE R OF CY CL E S AT 60Hz

T = T max

A

A

8.3ms Single Half Sine -Wave
JEDEC Method

SMBJ5.0(C)A-SMBJ170(C)A, Rev. c

SMB/DO-214AA Package Dimensions

SMB/DO-214AA (FS PKG Code P6)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.093

0.083 (2.108)

0.075 (1.905)

0.050 (1.270)

0.030 (0.762)

0.185 (4.699)

0.160 (4.064)

2

0.220 (5.588)

0.200 (5.080)

0.008 (0.203)

0.002 (0.051)

1

0.155 (3.937)

0.130 (3.302)

0.096 (2.438)

0.083 (2.108)

0.012 (0.305)

0.006 (0.152)

2.30

2.10

4.12

3.92

+

2.65

2.45

5.59

5.39

Minimum Recommended

Land Pattern

August 1999, Rev. A

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

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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. E