diodes designed
specifically for protecting sensitive equipment
against transient overvoltages.
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly suited to protect voltage sensitive devices
such as MOS Technology and low voltage supplied IC’s.
SMBJ188A-TR,CA-TR
TRANSIL
SMB
(JEDEC DO-214AA)
TM
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
SymbolParameterValueUnit
P
PP
P
I
FSM
T
stg
T
j
T
L
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse power dissipation (see note 1)Tj initial = T
Power dissipation on infinite heatsinkT
Non repetitive surge peak forward
current for unidirectional types
= 50°C
amb
tp = 10ms
Tj initial = T
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
amb
amb
600W
5W
100A
-65to+175
150
260°C
THERMAL RESISTANCES
SymbolParameterValueUnit
R
R
th (j-l)
th (j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad
Note 2 : Pulse test : tp<50ms.
Note 3 : ∆VBR= αT*(T
Note 4 : VR= 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
- 25)*VBR(25°C).
amb
Page 3
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
Fig. 2 : Peak pulse power versus exponential pulse duration.
SMBJxxxA-TR, CA-TR
3/6
Page 4
SMBJxxxA-TR, CA-TR
Fig. 3 :Clamping voltage versus peak pulse current.
Exponential waveform t
SMBJ188A
SMBJ130A
SMBJ58A
SMBJ33A
SMBJ18A
SMBJ8.5A
SMBJ5.0A
=20µs________
p
= 1 ms——————-
t
p
= 10 ms ...............
t
p
Note : The curves of the figure 3 are specified for a junction temperature of 25 ⊃C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆V
= αT*[T
BR
-25]*VBR(25°C)
amb
For intermediate voltages, extrapolate the given results.
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
C (pF)
10000
Tj = 25°C
S
M
B
J
5
.
0
S
1000
S
S
S
100
10
110100
A
M
B
J
1
3
A
M
B
J
2
6
A
M
B
J
5
8
A
M
B
J
1
8
8
A
F= 1 MHz
V(V)
R
500
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
C (pF)
10000
S
MBJ
5.
0
A
S
MBJ
1000
100
10
13A
S
MBJ
26
MBJ
MBJ
1
58
88
A
A
A
S
S
110100
Tj = 25°C
F= 1 MHz
V(V)
R
500
4/6
Page 5
SMBJxxxA-TR, CA-TR
Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 7 : Relative variation of leakage current
versus junction temperature.
Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration.
Mounting on FR4 PC Board with Recommended
pad layout.
ORDER CODE
SURFACE MOUNT
600W
SM B J 85 C A -TR
TAPE & REEL
BIDIRECTIONAL
No suffix: Unidirectional
STAND OFFVOLTAGE
5/6
Page 6
SMBJxxxA-TR, CA-TR
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
Packaging : standard packaging is in tape and reel.
SOD15 = Standard packaging is in Film.
Weight : 0.12 g
Informationfurnishedisbelievedto be accurateand reliable. However,STMicroelectronics assumes noresponsibility for theconsequences of
useof such information nor for any infringementof patents or other rights of third parties which mayresult from its use. No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics