Datasheet SM746 Datasheet (Polyfet)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

270

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

Watts V

0.65

C/W

Maximum
Junction
Temperature

SM746

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

175.0

Watts

Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

11.0

Drain to
Gate
Voltage

125 V

Single Ended

AM

Drain to
Source
Voltage

125

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

13

65

175.0

WATTS OUTPUT )

20:1 Relative

dB

%

0.60

Idq = A, Vds = V, F =
Idq =

0.60

A, Vds = V, F =

Idq = 0.60

A, Vds = V, F =

50.0

50.0

50.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

125

6.0

1

1 7

4.8

0.50

21.00

288.0

1.2

102.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

60.00Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

50.0

0.30

V, Vgs = 0V

A, Vgs = VdsIds =

6.00

Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0

MHz

175
175

MHz

175

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/08/2001

Id in amps; Gm in mhos

SM746

POUT VS PIN GRAPH

SM746 Pin vs Pout F=175 MHZ; IDQ=.6A; VDS=50V

240

200

160

120

80

Efficiency = 65%

40

0

0 5 10 15 20

PIN IN WATTS

S1E 6 DIE IV

25

20

15

Pout

Gain

CAPACITANCE VS VOLTAGE

S1E 6 DIE CAPACITANCE

1000

18

17

16

15

14

13

12

11

10

100

10

1

0 5 10 15 20 25 30 35 40 45 50

VDS IN VOLTS

Ciss

Coss

Crss

ID & GM VS VGSIV CURVE

100.00

10.00

S1E 6 DIE ID & GM Vs VG

Id

10

ID IN AMPS

5

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v

VDS IN VOLTS

S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES

1.00

gM

0.10

0 2 4 6 8 10 12 14 16 18

Vgs in Volts

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

REVISION 03/08/2001