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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Dissipation
270
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
Watts V
Junction to
Case Thermal
Resistance
o
0.65 C/W
Maximum
Temperature
Junction
o
200
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
135.0
Watts
Single Ended
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
-65 C to 150 C C A V
DC Drain
Current
oo
16.0
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70
SM706
AM
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
11
75
135.0
WATTS OUTPUT )
dB
20:1 Relative
0.80
Idq = A, Vds = V, F =
Idq =
0.80
%
Idq = 0.80
A, Vds = V, F =
A, Vds = V, F =
28.0
28.0
28.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
6.0
1
1 7
7.2
0.16
42.00
300.0
18.0
192.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
120.00Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
28.0
0.60
V, Vgs = 0V
A, Vgs = VdsIds =
15.00
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
MHz
175
175
MHz
175
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 01/28/2002
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Id in amps; Gm in mhos
SM706 Pin vs Pout Freq=175MHz,
Gain
SM706
POUT VS PIN GRAPH
175
150
125
100
75
50
25
0
0 2 4 6 8 10 12 14 16 18 20
45
40
35
30
25
20
ID IN AMPS
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v
Vds=28Vdc, Idq=.8A
Pout
Efficiency@120W = 72%
Pin in Watts
S1A 6 DIE IV
VDS IN VOLTS
CAPACITANCE VS VOLTAGE
14
13
12
11
10
9
1000
100
10
0 5 10 15 20 25 30
S1A 6 DICE CAPACITANCE
Ciss
Coss
Crss
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100.00
10.00
1.00
0 2 4 6 8 10 12 14
S1A 6 DIE ID & GM Vs VG
Id
gM
Vgs in Volts
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
01/28/2002
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
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