Datasheet SM6T75A, SM6T75CA Datasheet (SGS Thomson Microelectronics)

SM6T6V8A/220A

®

FEATURES

PEAK PULSE POWER : 600 W (10/1000µs)

■

BREAKDOWN VOLTAGE RANGE :

■

From 6.8V to 220 V.
UNI AND BIDIRECTIONAL TYPES

■

LOW CLAMPING FACTOR

■

FAST RESPONSE TIME

■

UL RECOGNIZED

■

DESCRIPTION

Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu­larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup­plied IC’s.

SM6T6V8CA/220CA

TRANSIL

SMB

(JEDEC D0-214AA)

TM

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25°C)

Symbol Parameter Value Unit

P

PP

P

I

FSM

T

stg

T

j

T

L

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

Peak pulse power dissipation (see note 1) Tj initial = T

Power dissipation on infinite heatsink T

Non repetitive surge peak forward
current for unidirectional types

50°C

amb =

tp = 10ms
Tj initial = T

Storage temperature range
Maximum junction temperature

Maximum lead temperature for soldering during 10 s.

amb

amb

600 W

5W

100 A

-65to+175
150

260 °C

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th (j-l)

th (j-a)

Junction to leads
Junction to ambient on printed circuit on recommended pad

20 °C/W

100 °C/W

layout

°C
°C

August 2001- Ed: 5A

1/5

SM6Txx

ELECTRICAL CHARACTERISTICS (T

Symbol Parameter

amb

= 25°C)

I

I

F

V

RM

V

BR

V

CL

I

RM

I

PP

αT

V

F

Uni

directional

Stand-off voltage
Breakdown voltage

Clamping voltage
Leakage current @ V

RM

Peak pulse current
Voltage temperature coefficient
Forward voltage drop

I

Types

Mar-

kingBidirectional

RM@VRM

max min nom max max max max typ

Mar-

µAV VVVmAV A V A10

king

VV

CLVBR

V

RM

VBR@IRVCL@I

PP

note2 10/1000µs 8/20µs note3 note4

V

I

RM

I

PP

VCL@I

F

αTC

PP

-4

V

/°C pF

SM6T6V8A DE SM6T6V8CA LE 1000 5.8 6.45 6.8 7.14 10 10.5 57 13.4 298 5.7 4000
SM6T7V5A DG SM6T7V5CA LG 500 6.4 7.13 7.5 7.88 10 11.3 53 14.5 276 6.1 3700
SM6T10A DP SM6T10CA LP 10 8.55 9.5 10 10.5 1 14.5 41 18.6 215 7.3 2800
SM6T12A DT SM6T12CA LT 5 10.2 11.4 12 12.6 1 16.7 36 21.7 184 7.8 2300
SM6T15A DX SM6T15CA LX 1 12.8 14.3 15 15.8 1 21.2 28 27.2 147 8.4 1900
SM6T18A EE SM6T18CA ME 1 15.3 17.1 18 18.9 1 25.2 24 32.5 123 8.8 1600
SM6T22A EK SM6T22CA MK 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350
SM6T24A EM SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250
SM6T27A EP SM6T27CA MP 1 23.1 25.7 27 28.4 1 37.5 16 48.3 83 9.6 1150
SM6T30A ER SM6T30CA MR 1 25.6 28.5 30 31.5 1 41.5 14.5 53.5 75 9.7 1075
SM6T33A ET SM6T33CA MT 1 28.2 31.4 33 34.7 1 45.7 13.1 59.0 68 9.8 1000
SM6T36A EV SM6T36CA MV 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950
SM6T39A EX SM6T39CA MX 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900
SM6T68A FQ SM6T68CA NQ 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625
SM6T75A FS SM6T75CA NS 1 64.1 71.3 - 78.8 1 103 5.8 134 30 10.5 575
SM6T100A FY SM6T100CA NY 1 85.5 95.0 100 105 1 137 4.4 178 22.5 10.6 500
SM6T150A GL SM6T150CA OL 1 128 143 150 158 1 207 2.9 265 15 10.8 400
SM6T200A GU SM6T200CA OU 1 171 190 200 210 1 274 2.2 353 11.3 10.8 350
SM6T220A GW SM6T220CA OW 1 188 209 220 231 1 328 2 388 10.3 10.8 330

%I

PP

100

50

0

Note 2 : Pulse test : tp<50ms.
Note 3 : ∆VBR= αT*(T
Note 4 : VR= 0 V, F = 1 MHz. For bidirectional types,

capacitance value is divided by 2.

10 s

PULSE WAVEFORM 10/1000 s

1000 s

- 25)*VBR(25°C).

amb

2/5

Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).

t

Fig. 2 : Peak pulse power versus exponential pulse duration.

SM6Txx

Fig. 3 : Clamping voltage versus peak pulse current.

Exponential waveform t

=20µs ________

p

= 1 ms ——————-

t

p

= 10 ms ...............

t

p

Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆V

= αT*[T

BR

-25]*VBR(25°C)

amb

For intermediate voltages, extrapolate the given results.

3/5

SM6Txx

Fig. 4a : Capacitance versus reverse applied

voltage for unidirectional types (typical values).

Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).

Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).

Fig. 6 : Transient thermal impedance junc­tion-ambient versus pulse duration.
Mounting on FR4 PC Board with Recommended
pad layout.

Fig. 7 : Relative variation of leakage current
versus junction temperature.

4/5

ORDER CODE

SM6Txx

SM 6 T 100 C A

SURFACE MOUNT

600W

BREAKDOWNVOLTAGE

BIDIRECTIONAL
No suffix: Unidirectional

MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA

SMB (Plastic)

E1

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

E

c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

A1

c

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L

A2

b

L 0.75 1.60 0.030 0.063

FOOTPRINT DIMENSIONS (Millimeter)
SMB Plastic.

2.3

Packaging : standard packaging is tape and reel.
SOD15 = Standard packaging is in Film.

Weight = 0.12 g

1.52 2.75

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
ofuse of such information nor for anyinfringement of patents orother rights of third parties which mayresult from its use. No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

1.52

The ST logo is a registered trademark of STMicroelectronics

© 2001 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

http://www.st.com

5/5