Datasheet SM6K2 Datasheet (ROHM) [ru]

Transistors

.

4V Drive Nch+Nch MOS FET

SM6K2

zStructure zExternal dimensions (Unit : mm)
Silicon N-channel
MOSFET transistor

zFeatu res

1) Two RHU002N06 chips in a SMT p ackage.

2) Mounting possible with SMT3 automatic mou nting machin es.

3) Transistor elements are independent, eliminating mutual
interference.

4) Mounting cost and area can be cut in half.

zPackaging specifications zEquivalent circuit

Taping

T110
3000

Type
SM6K2

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

SMT6

1pin mark

(4) (5) (6)

∗2

∗1

∗

A protection diode has been built in between the gate
and the source to protect against static electricity
when the product is in use.
Use the protection circuit when fixed voltages are exceeded

2.9

1.9

0.95

0.95

(5)

(6)

(4)

1.6

(1)

(2)

(3)

0.3

Each lead has same dimensions

Abbreviated symbol : K2

∗1

∗2

(1) TR1 Drain
(2) TR2 Gate
(3) TR2 Source
(4) TR2 Drain
(5) TR1 Gate
(6) TR1 Source

∗1 Gate Protection Diode
∗2 Body Diode

(1)(2)(3)

1.1

0.8

2.8

0.15

SM6K2

0.3Min.

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Drain reverse current

Total power dissipation

Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.

Continuous
Pulsed
Continuous
Pulsed

Symbol Limits Unit

V

DSS

V

GSS

D

DP

I
I

DR

I

DRP

P

D

Tch

Tstg °C −55 to +150

∗1

∗1

∗2

60 V

±20

200I

200
800
300
200
150

mW /

mW / ELEMENT

V
mA
mA800
mA
mA

°C

TOTAL

zThermal resistance

Parameter

Channel to ambient

∗ With each pin mounted on the recommended lands.

Symbol Limits Unit

∗

Rth(ch-a)

416.7
625

°C / W / TOTAL

°C / W / ELEMENT

Rev.B 1/4

Transistors

zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

SM6K2

Parameter
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage

Drain-source on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Symbol

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

l Yfs l

iss

C

oss

C
C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Min.

−

60

−

1

−

−

0.1

−

−

−

−

−

−

−

−

−

−

Typ.

−

−

−

−

1.7

2.8 4.0

−

15

8
4
6

5
12
95

2.2 4.4

0.6

0.3

zBody diode characteristics (Source-drain) (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol

Min. Typ. Max.

V

SD

−−1.2 VForward voltage IS=200mA, VGS=0V

Max.

±10

−

1

2.5

2.4

−

−

−

−

−

−

−

−

−

−

Unit

Unit

V

GS

µA

V

I

D

=1mA, VGS=0V

V

DS

µA

V

DS

V

I

D

=200mA, VGS=10V

Ω

I

D

=200mA, VGS=4V

VDS=10V, ID=200mA

S

pF

V

DS

VGS=0V

pF

f=1MHz

pF
ns

ID=100mA, V

ns

VGS=10V
RL=300Ω

ns

G

R

ns
nC

VDD 30V
V

GS

nC

D

=200mA

I

nC

Test Conditions

=±20V, VDS=0V

=60V, VGS=0V
=10V, ID=1mA

=10V

DD

=10Ω

=10V

Conditions

30V

Rev.B 2/4

Transistors

s

.0

0

)

.0

.0

)

F

0

0

F

.2

.2

zElectrical characteristic curves

0.8
10V

0.7

8V

0.6

D (A)

0.5

0.4

0.3

0.2

DRAIN CURRENT : I

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 4
DRAIN-SOURCE VOLTAGE : V

6V

Ta=25°C
Pulsed

4V

3.5V

VGS=3V

3.0 3.5

DS (V)

Fig.1 Typical output characteristic

10

(Ω)

DS (on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Ta=125°C

75°C
25°C

−25°C

1.0

0.01
DRAIN CURRENT : I

0.1

D

(A)

V

GS

Pulsed

=

10V

Fig.4 Static drain-source on-State

resistance vs. drain current ( Ι )

3.0

(Ω)

2.5

DS (on)

2.0

1.5

ID=200mA

100mA

VGS=10V
Pulsed

1

V

DS

=

10V

Pulsed

(A)

D

0.1

0.01

DRAIN CURRENT : I

0.001

Ta=−25°C

25°C
75°C

125°C

1.00.50.0

1.5 2.0 2.5 3.0 3.5

GATE-SOURCE VOLTAGE : V

Fig.2 Typical transfer characteristics

10

(Ω)

DS (on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

1.0

1

Fig.5 Static drain-source on-state

Ta=125°C

75°C
25°C

−25°C

0.01

0.1

DRAIN CURRENT : I

resistance vs. drain current ( ΙΙ

1

V

GS

=

0V

Pulsed

(A)

DR

0.1
Ta=125°C

75°C
25°C

−25°C

0.01

SM6K2

2.5

(V

GS (th)

2.0

1.5

1.0

0.5

GATE THRESHOLD VOLTAGE : V

0.0

4.54.0

GS

(V)

−50 −25 0
CHANNEL TEMPERATURE : Tch

50 75 100 12525

V

DS

ID=1mA

Pulsed

=

(°C)

10V

15

Fig.3 Gate threshold voltage

vs. channel temperature

7

V

GS

=

4V

Pulsed

1

D

(A)

6

(Ω)

5

DS (on)

4

ID=200mA

3

2

100mA

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

0 5 10 15 2

GATE-SOURCE VOLTAGE : V

Ta=25°C
Pulsed

GS

(V)

ig.6 Static drain-source on-state

resistance vs. gate-source voltage

10

(A)

DR

1

VGS=10V

0.1

0.01

0V

Ta=25°C

Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

1.0

−50

0

−25 50 75 100 125 15

CHANNEL TEMPERATURE : Tch (°C)

25

ig.7 Static drain-source on-state

resistance vs. channel temperature

REVERSE DRAIN CURRENT : I

0.001

0.40.20.0

0.6 0.8 1.0

SOURCE-DRAIN VOLTAGE : V

Fig.8 Reverse drain current vs.

source-drain voltage ( Ι )

SD

(V)

REVERSE DRAIN CURRENT : I

0.001

1

SOURCE-DRAIN VOLTAGE : V

Fig.9 Reverse drain current vs.

0.40.20.0

0.6 0.8 1.0

SD

(V)

source-drain voltage ( ΙΙ )

1

Rev.B 3/4

Transistors

e

)

0

0

S

1

Ta=−25°C

0.1

0.01

25°C

SM6K2

1000

(ns)

100

10

SWITCHING TIME : t

DD
GS
G

=30V
=10V

=10Ω

Ta=25°C
V
V
R

t

f

Pulsed

t

d(off)

t

d(on)

t

r

75°C

125°C

V

GS

=10V

Pulsed

100

(pF)

10

CAPACITANCE : C

Ta=25°C

f=1MHz

V

GS

=0V

C

iss

C

C

oss

rss

0.001

0.001 0.01 0.1 1

FORWARD TRANSFER ADMITTANCE : I Yfs I (S

DRAIN CURRENT : I

D

(A)

Fig.10 Forward transfer admittanc

1

0.01 0.1 1 10 10
DRAIN-SOURCE VOLTAGE : V

Fig.11 Typical capacitance

vs. drain current

zSwitching characteristics measurement circuit

V

GS

R

G

D.U.T.

D

I

R

V

Fig.13 Switching time test circuit

V

D

L

DD

V

GS

V

DS

DS

(V)

vs. drain-source voltage

Pulse width

50%

90%

10%

10%

d (on)

t

on

t

d (off)

t

90%

t

r

t

Fig.14 Switching time waveforms

1

1 10 100 100

DRAIN CURRENT : I

Fig.12 Switching characteristics

50%

10%

90%

t

f

off

D

(mA)

Rev.B 4/4

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1