Page 1
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—1
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5022 series are crystal oscillator module ICs
fabricated in NPC’s Molybdenum-gate CMOS, that
incorporate high-frequency, low current consumption oscillator and output buffer circuits. Highly
accurate thin-film feedback resistors and high-frequency capacitors are built-in, eliminating the need
for external components to make a stable fundamental-harmonic oscillator.
FEATURES
■
Up to 30MHz operation
■
Fundamental oscillation
■
Capacitors CG, CD built-in
■
Inverter amplifier feedback resistor built-in
■
TTL input level
■
4 mA (VDD = 2.7 V) drive capability
8 mA (VDD = 4.5 V) drive capability
■
Output three-state function
■
2.7 to 5.5 V supply voltage (A× series)
4.5 to 5.5 V supply voltage (B× series)
■
Oscillator frequency output (fO, fO/2, fO/4, fO/8
determined by internal connection)
■
6-pin SOT (SM5022××H)
■
Chip form (CF5022××)
SERIES CONFIGURATION
ORDERING INFORMATION
Version
1
1. Chip form devices have designation CF5022××.
Supply voltag e
Recommended
operating frequency
range (MHz)
Built-in
capacitance
(pF)
gm
ratioRf(k
Ω
)
Output
frequency
Output
level
Standby
output state
Chip SO T 3V 5V C
G
C
D
SM5022A1H 2.7 to 5.5 2.7 to 5.5 4 to 24 4 to 30 8 10 1 6 0 0 fo CMOS
High
impedance
SM5022A2H 2.7 to 5.5 2.7 to 5.5 4 to 24 4 to 30 – – 1 60 0 fo CMOS
High
impedance
SM5022A3H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 6 0 0 fo/2 CMOS
High
impedance
SM5022A4H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 – – 1 60 0 fo/2 CMOS
High
impedance
SM5022A5H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 6 0 0 fo/4 CMOS
High
impedance
SM5022A7H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 6 0 0 fo/8 CMOS
High
impedance
SM5022B1H 4.5 to 5.5 4.5 to 5.5
×
4 to 30 8 1 0 1 60 0 fo TT L
High
impedance
De vice Pack ag e
SM5022××H 6-pin SOT
CF5022××–2 Chip form
Page 2
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—2
PACKAGE DIMENSIONS
(UNIT : mm)
•
6-pin SOT
0.4 ± 0.1
0.12
M
0 to 0.15
1.1 ± 0.1
1.6
+ 0.2
− 0.1
2.8
+ 0.2
− 0.3
1.9 ± 0.2
0.1
0.45 ± 0.15
0.15
+
0.1
−
0.05
0.95
2.9 ± 0.2
Page 3
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—3
PAD LAYOUT
(Unit : µm)
PINOUT
(T op V iew)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 1.00 × 0.80 mm
Chip thickness: 220 ± 30 µm
Chip base: VDD level
Q
VDD
XTVSS
(0,0)
(1000,800)
INH
XT
HA5022
1
XT
VSS
Q
VDD
2
3
6
5
4
2
XT
INH
Number Name I/O Description
Pad dimensions [µm]
XY
1 INH I Output state control input. High impedance when LOW . Pull-up resistor built in 8 34 217
2 X T I Amplifier input.
Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and X T
637 217
3 VS S – Ground 165 165
4 Q O Output. Output frequency (f
O
, fO/2, fO/4, fO/8) determined by internal connection 162 6 37
5 V D D – Supply voltage 859 450
6XT
O Amplifier output.
Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and X T
804 604
XT
VSSVDD
Q
CG CD
Rf
XT
INH
1/2 1/2 1/2
(INH : Low active)
Page 4
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—4
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0 V
Recommended Operating Conditions
VSS = 0 V, f ≤ 30MHz, CL ≤ 15pF
Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or pow er dissipation.
Parameter Symbol Condition Rating Unit
Supply voltage range V
DD
−
0.5 to 7.0 V
Input voltage range V
IN
−
0.5 to VDD + 0.5 V
Output voltage range V
OUT
−
0.5 to VDD + 0.5 V
Operating temperature range T
opr
−
40 to 85
°
C
Storage temperature range T
stg
Chip form
−
65 to 150
°
C
6-pin SOT
−
55 to 125
Output current I
OUT
13 mA
Po w er dissipation P
D
6-pin SOT 250 m W
Parameter Symbol Condition
Rating
Unit
min typ max
Supply voltage V
DD
2.7 – 5.5 V
Input voltage V
IN
V
SS
–VDDV
Operating temperature T
OPR
−
20 – 80
°
C
Page 5
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—5
Electrical Characteristics
3 V operation: A× series
VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
5 V operation: A× series/ B× series
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
Parameter Symbol Condition
Rating
Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, VDD = 2.7 V, IOH = 4 mA 2.1 2.4 – V
L O W-level output voltage V
OL
Q: Measurement cct 2, VDD = 2.7 V, IOL = 4 mA – 0.3 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, VDD = 3.6 V, INH = LO W, VOH = V
DD
––10
µA
Q: Measurement cct 2, VDD = 3.6 V, INH = LO W, VOL = V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 – – V
L O W -level input voltage V
IL
INH – – 0.5 V
Current consumption I
DD
INH = open, Measurement cct 3, load cct 1, C
L
= 15 p F,
30 MHz crystal oscillator
–47mA
INH pull-up resistance R
UP
Measurement cct 4 25 100 250 k
Ω
Feedback resistance RfMeasurement cct 5 200 600 1000 k
Ω
Built-in capacitance
C
G
Design value, determined by the
internal wafer pattern
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
7.44 8 8.56 pF
C
D
9.3 1 0 10.7 pF
Parameter Symbol Condition
Rating
Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, VDD = 4.5 V, IOH = 8 mA 3.9 4.2 – V
L O W-level output voltage V
OL
Q: Measurement cct 2, VDD = 4.5 V, IOL = 8 mA – 0.3 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, VDD = 5.5 V, INH = LO W, VOH = V
DD
––10
µA
Q: Measurement cct 2, VDD = 5.5 V, INH = LO W, VOL = V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 – – V
L O W -level input voltage V
IL
INH – – 0.8 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 1, CL = 15 p F,
30 MHz crystal oscillator
SM5022A×H, CF5022A×–712
mA
INH = open, Measurement cct 3,
load cct 2, CL = 15 p F,
30 MHz crystal oscillator
SM5022B×H, CF5022B×–712
INH pull-up resistance R
UP
Measurement cct 4 25 100 250 k
Ω
Feedback resistance RfMeasurement cct 5 200 600 1000 k
Ω
Built-in capacitance
C
G
Design value, determined by the
internal wafer pattern
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
SM5022B1H, CF5022B1
7.44 8 8.56 pF
C
D
9.3 1 0 10.7 pF
Page 6
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—6
Switching Characteristics
CMOS (A× series)
3 V operation
VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
5 V operation
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
Parameter Symbol Condition
Rating
Unit
min typ m ax
Output rise time t
r1
Measurement cct 6, load cct 1,
CL = 15 p F
0.2V
DD
to 0.8V
DD
–510
ns
0.1VDD to 0.9V
DD
–1020
Output fall time t
f1
Measurement cct 6, load cct 1,
CL = 15 p F
0.8V
DD
to 0.2V
DD
–510
ns
0.9VDD to 0.1V
DD
–1020
Output duty cycle
1
1. Determined by the lot monitor.
Duty
Measurement cct 6, load cct 1,
Ta = 25
°
C, VDD = 3 V, CL = 15 pF, f = 30MHz
45–55%
Output disable delay time
2
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
t
PLZ
Measurement cct 7, load cct 1, Ta = 25 °C, VDD = 3 V, CL = 15 p F
– – 100 ns
Output enable delay time2t
PZL
– – 100 ns
Parameter Symbol Condition
Rating
Unit
min typ m ax
Output rise time t
r2
Measurement cct 6, load cct 1, 0.1VDD to 0.9V
DD
, CL = 15 p F – 3.5 7 ns
Output fall time t
f2
Measurement cct 6, load cct 1, 0.9VDD to 0.1V
DD
, CL = 15 p F – 3.5 7 ns
Output duty cycle
1
1. Determined by the lot monitor.
Duty
Measurement cct 6, load cct 1,
Ta = 25
°
C, VDD = 5 V, CL = 15 pF, f = 30 MHz
45–55%
Output disable delay time
2
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
t
PLZ
Measurement cct 7, load cct 1, Ta = 25 °C, VDD = 5 V, CL = 15 p F
– – 100 ns
Output enable delay time2t
PZL
– – 100 ns
Page 7
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—7
TTL (B× series)
5 V operation
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
Current consumption and Output waveform with NPC’s standard crystal
FUNCTIONAL DESCRIPTION
Standby Function
When INH goes LOW, the oscillator output on Q goes high impedance.
Parameter Symbol Condition
Rating
Unit
min typ m ax
Output rise time t
r3
Measurement cct 6, load cct 2, 0.4V to 2.4V, CL = 15 p F – 2.5 7 ns
Output fall time t
f3
Measurement cct 6, load cct 2, 2.4V to 0.4V, CL = 15 p F – 2.5 7 ns
Output duty cycle
1
1. Determined by the lot monitor.
Duty
Measurement cct 6, load cct 2,
Ta = 25
°
C, VDD = 5 V, CL = 15 pF, f = 30 MHz
45–55%
Output disable delay time
2
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
t
PLZ
Measurement cct 7, load cct 2, Ta = 25 °C, VDD = 5 V, CL = 15 p F
– – 100 ns
Output enable delay time2t
PZL
– – 100 ns
INH Q Oscillator
HIGH (or open) A ny fO , fO/2, fO/4, or fO/8 output frequency Nor mal operation
LO W High impedance Stopped
f (MHz) R (Ω) L (mH) Ca (fF) Cb (pF)
30 18.62 16.24 1.733 5.337
L
Ca R
Cb
Page 8
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—8
MEASUREMENT CIRCUITS
Measurement cct 1
2.0V
P−P
, 10MHz sine wave input signal (3V operation)
3.5V
P−P
, 10MHz sine wave input signal (5V operation)
C1 : 0.001µF
R1 : 50
Ω
R2 : 525Ω (3V operation)
490Ω (5V operation)
Measurement cct 2
Measurement cct 3
2.0V
P−P
, 30MHz sine wave input signal (3V operation)
3.5V
P−P
, 30MHz sine wave input signal (5V operation)
C1 : 0.001µF
R1 : 50
Ω
Signal
Generator
VDD
VSS
XT Q
R1 R2
C1
VOH
0V
Q out monitor
VDD
VSS
Q
IOL, IZ
VOL
V
A
INH
IZ
Signal
Generator
VDD
VSS
XT Q
R1
C1
IDD
Measurement cct 4
Measurement cct 5
Measurement cct 6
CG ,CD : 10pF (5022A2, 5022A4)
Measurement cct 7
R1 : 50
Ω
VDD
VSS
IPR
5.0V
INH
RUP =
V
DD
IPR
A
VDD
VSS
IRf
Rf =
XT
V
DD
IRf
XT
A
VDD
VSS
XT
QX'tal
XT
CG
CD
Signal
Generator
VDD
VSS
XT Q
R1
INH
Page 9
preliminary
SM5022 series
NIPPON PRECISION CIRCUITS—9
Load cct 1
CL = 15pF
Load cct 2
CL = 15pF
R
=
800
Ω
Switching Time Measurement Wavef orm
Output duty level (CMOS)
Output duty level (TTL)
Output duty cycle (CMOS)
Output duty cycle (TTL)
Q output
CL
(Including probe capacity)
Q output
C
L
(Including proove
capacity)
R
0.9VDD
0.1VDD
0.9VDD
0.1VDD
tr tf
Q output
DUTY measuring
voltage (0.5V
DD)
TW
2.4V
0.4V
2.4V
0.4V
tr tf
Q output
DUTY measuring
voltage (1.4V
)
TW
DUTY measuring
voltage
(0.5VDD)
Q output
TW
T
DUTY= T
W/ T 100 (%)
DUTY measuring
voltage
(1.4V)
Q output
TW
T
DUTY= T
W/ T 100 (%)
Page 10
preliminary
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to
improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for
the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits
are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision
Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or
malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter,
including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or
indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC.
4-3, Fukuzumi 2-chome
Koto-ku, Tokyo 135-8430, Japan
Telephone: 03-3642-6661
Facsimile: 03-3642-6698
SM5022 series
NIPPON PRECISION CIRCUITS—10
NP9906AE 1999.06
NIPPON PRECISION CIRCUITS INC.
Output Enable/Disable Delay
Q output
INH
VIH
VIL
tPLZ
tPZL
INH inputwaveform tr = tf 10ns
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