Datasheet SM341 Datasheet (Polyfet)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

300

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

Watts V

0.55

C/W

Maximum
Junction
Temperature

SM341

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

150.0

Watts

Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

15.0

Drain to
Gate
Voltage

125 V

Single Ended

AM

Drain to
Source
Voltage

125

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

13

65

150.0

WATTS OUTPUT )

20:1 Relative

dB

%

0.80

Idq = A, Vds = V, F =
Idq =

0.80

A, Vds = V, F =

Idq = 0.80

A, Vds = V, F =

50.0

50.0

50.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

125

5.0

1

1 7

5.5

0.30

35.00

400.0

15.0

200.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

40.00Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

50.0

0.30

V, Vgs = 0V

A, Vgs = VdsIds =

6.00

Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0

MHz

175
175

MHz

175

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 07/11/2001

Id in amps; Gm in mhos

Coss

SM341

POUT VS PIN GRAPH

SM341 Freq=175 Mhz; Idq=.5A, Vds=50Vdc

240

200

Linear @ 120W

160

120

80

40

0

0 5 10 15 20

Efficiency = 55%

Pin in Watts

S3E 1 DIE IV

35

30

25

20

P1dB = 200W

Pout

Gain

14.0

13.5

13.0

12.5

12.0

11.5

11.0

10.5

10.0

CAPACITANCE VS VOLTAGE

1000

100

10

0 10 20 30 40 50

S3E 1 DIE CAPACITANCE

Ciss

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100.00

10.00

S3E 1 DIE ID & GM Vs VG

Id

15

ID IN AMPS

10

5

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v

VDS IN VOLTS

Zin Zout PACKAGE DIMENSIONS IN INCHES

1.00

gM

0.10

0 2 4 6 8 10 12 14 16 18

Vgs in Volts

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

REVISION 07/11/2001