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Product Description
Stanford Microdevices’ SLN-286 is a high performance
gallium arsenide heterojunction bipolar transistor MMIC
housed in a low-cost surface mount plastic package. A
Darlington configuration is used for broadband performance
from DC-3.5 GHz.
The SLN-286 needs only 2 DC-Blocking capacitors and a
bias resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <2.0 dB noise
figure.
This 50 Ohm LNA requires only a single supply voltage and
draws only 5mA. For broadband applications, it may be
biased at 4mA with minimal effect on noise figure and gain.
The SLN-286 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SLN-286
DC-3.5 GHz, 3Volt
50 Ohm LNA MMIC Amplifier
Product Features
• Patented, Reliable GaAs HBT Technology
• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz
• High Associated Gain: 27 dB T yp. at 2.0 GHz
• T rue 50 Ohm MMIC : No External Matching
Required
• Low Current Draw : Only 5 mA at 3V
• Low Cost Surface Mount Plastic Package
Applications
• AMPS, PCS, DECT , Handsets
• Tri-Band & Broadband Receivers
Symbol Param eters: Test Conditions Units Min. Ty p. Max.
NF
50 Ohm
Noise Figure in 50 Ohm s:
Vds = 3.0 V, Ids = 5 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
dB
dB
1.7
2.2
2.1
S
21
50 Ohm Gain
:
Vds = 3.0 V, Ids = 5 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
dB
22 25
23
VSWR
50 Ohm Match
(
Input and Output
)
:
Vds = 3.0 V, Ids = 5 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
-
1.8:1
2.5:1
NF
50 Ohm
Noise Fi
g
ure in 50 Ohm s:
Vds = 2.8 V, Ids = 4 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
dB
dB
1.9
2.4
2.3
S
21
50 Ohm Gain
:
Vds = 2.8 V, Ids = 4 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
dB
19 22
20
VSWR
50 Ohm Match
(
Input and Output
)
:
Vds = 2.8 V, Ids = 4 mA
f = D C -1.5 G H z
f = 1.5-3.5 GH z
-
1.4:1
2.0:1
P
1dB
Output Power at 1dB Com pression
:
f = D C -3.5 G H z
Vd= 3.0V, Id = 5 mA
Vd= 2.8V, Id = 4 mA
dBm
dBm
-1 2
-1 4
IP
3
Third O rder Intercept Point
:
f = D C -3.5 G H z
Vd= 3.0V, Id = 5 mA
Vd= 2.8V, Id = 4 mA
dBm
+3
+1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
Noise Figure vs. Frequency
1
1.5
2
2.5
0.1 0.5 1 1.5 2 2.5 3 3.5
4 mA
5 mA
dB
GHz
4-21
Low Noise MMICs
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Typical S-Parameters Vds = 3.0V, Ids = 5mA
SLN-286 DC-3.5 GHz LNA MMIC Amplifier
Freq GHz |S 11 | S11 Ang |S 21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.1 00
0.074 -124 11.02 -4 .039 13 .201 -5 0
.2 50
0.083 -113 11.12 -8 .033 9 .215 -2 6
.5 00
0.079 -98 11.45 -47 .032 -17 .210 -48
1.00
0.178 -168 12.49 -100 .035 -34 .153 -109
1.50
0.290 89 12.68 -160 .033 -51 .038 -175
2.00
0.372 22 12.91 140 .037 80 .133 -60
2.50
0.427 -47 11.02 73 .040 -103 .255 -145
3.00
0.437 -117 9.22 18 .045 -134 .350 141
3.50
0.414 180 7.45 -38 .051 -158 .365 -79
4.00
0.393 126 5.53 -84 .053 177 .377 23
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
T ypical Performance at 25
°°
°°
°
C (Vds = 3.0V , Ids = 5mA)
Low Noise MMICs
-20
-16
-12
-8
-4
0
4
8
12
0.1 0.5 1 1.5 2 2.5 3 3.5
TOIP
Pout
GHz
dB
-20
-15
-10
-5
0
0.10.511.522.533.5
10
15
20
25
30
0.1 0.5 1 1.5 2 2.5 3 3.5
4 m
A
5 mA
|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
Power Out & TOIP vs. Frequency
-40
-30
-20
-10
0
0.10.511.522.533.5
-30
-25
-20
-15
-10
-5
0
0.1 0.5 1 1.5 2 2.5 3 3.5
GHz
dB
GHz
dB
GHz
dB
GHz
dB
4-22
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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SLN-286 DC-3.5 GHz LNA MMIC Amplifier
Absolute Maximum Ratings
Part Number Devices Per Reel Reel Size
SLN-286-TR1 1000 7"
SLN-286-TR2 3000 13"
SLN-286-TR3 5000 13"
Part Number Ordering Information
Notes:
1. Operation of this device above any one of
these parameters may cause
permanent damage.
Parameter
Absolute
Maximum
Device Current 50m A
Power Dissipation 440m W
RF Input Power 100mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Pin Functi on
1 RF Input
2 Ground
3
RF Output
and Bias
4 Ground
Device Pinout
Device Outline
Typical Biasing Configuration
3.3
3.0
Recommended Bias Resistor Values
Suppl
y
Voltage(Vs)
3.3V 5V 7.5V 9V 12V 15V 20V
Rbias (Ohms ) 60 400 900 1200 1800 2400 3400
4-23
Low Noise MMICs
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