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Product Description
Stanford Microdevices’ SLN-186 is a high performance
gallium arsenide heterojunction bipolar transistor MMIC
housed in a low-cost surface mount plastic package. A
Darlington configuration is used for broadband performance
from DC-4.0 GHz.
The SLN-186 needs only 2 DC-blocking capacitors and a
bias resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <2.0dB noise
figure.
SLN-186
DC-4.0 GHz, 3.5 Volt
50 Ohm LNA MMIC Amplifier
This 50 Ohm LNA requires only a single supply voltage and
draws only 8mA. For broadband applications, it may be
biased at 6mA with minimal effect on noise figure and gain.
The SLN-186 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Product Features
• Patented, Reliable GaAs HBT Technology
• Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz
• High Associated Gain: 22dB T yp. at 2.0 GHz
• True 50 Ohm MMIC : No External Matching
Noise Figure vs. Frequency
3
Required
• Low Current Draw : Only 8mA
• Low Cost Surface Mount Plastic Package
2.5
dB
2
1.5
0.10.511.522.533.54
Electrical Specifications at Ta = 25C
Symbol Parameters: Test Conditions Units Min. Typ. Max.
NF
50 Ohm
S
VSWR
NF
50 Ohm
S
VSWR
P
IP
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
N o ise F ig u re in 5 0 O hm s :
Vds = 3.5V, Ids = 8mA
50 Ohm G ain:
21
Vds = 3.5V, Ids = 8mA
50 Ohm Match(Input and Output):
Vds = 3.5V, Ids = 8mA
N o ise F ig u re in 5 0 O hm s :
Vds = 3.2V, Ids = 6mA
50 Ohm G ain:
21
Vds = 3.2V, Ids = 6mA
50 Ohm Match(Input and Output):
Vds = 3.2V, Ids = 6mA
Output Power at 1dB Compression:
1dB
f = D C -1 .5 G H z
Third Order Intercept Point:
3
f = D C -1 .5 G H z
GHz
6 mA
8 mA
Applications
• AMPS, PCS, DECT , Handsets
• Tri-Band & Broadband Receivers
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
f = D C -1 .5 G H z
f = 1.5-4.0 GH z
Vd= 3.5V, Id = 8 mA
Vd= 3.2V, Id = 6 mA
Vd= 3.5V, Id = 8 mA
Vd= 3.2V, Id = 6 mA
4-9
dB
dB
dB
-
dB
dB
dB
-
dBm
dBm
dBm
2.0
2.4
19 22
20
1.8:1
3.0:1
2.2
2.6
14 17
16
1.4:1
2.5:1
-10
-12
+5
+3
2.4
2.5
Low Noise MMICs
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SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 3.5V , Ids = 8mA)
°°
0
-5
-10
dB
-15
-20
0.10.511.522.533.54
0
-10
-20
dB
-30
Low Noise MMICs
-40
0.1 0.5 1 1.5 2 2.5 3 3.5 4
|S11| vs. Frequency
GHz
|S12| vs. Frequency
GHz
Pout & TOIP vs. Frequency
12
8
4
0
dBm
-4
-8
-12
-16
0.10.511.522.533.54
TOIP
Pout
GHz
30
25
20
dB
15
10
0.1 0.5 1 1.5 2 2.5 3 3.5 4
8mA
6mA
GHz
|S22| vs. Frequency
0
-10
-20
dB
-30
-40
|S21| vs. Frequency
0.1 0.5 1 1.5 2 2.5 3 3.5 4
GHz
Typical S-Parameters Vds = 3.5V, Ids = 8mA
Freq GHz |S11| S11 Ang |S21| S21 Ang |S12 | S 12 Ang |S2 2| S22 A ng
.100 0.092 122 11.69 -12 .080 -11 .044 35
.250 0.068 -154 11.99 -4 .053 5 .089 -22
.500 0.067 -153 12.32 -13 .042 16 .091 -46
1.00 0.125 -160 13.03 -39 .040 29 .123 -112
1.50 0.215 152 14.07 -72 .048 45 .245 169
2.00 0.309 90 15.11 -138 .045 31 .394 86
2.50 0.423 36 15.20 -173 .056 14 .421 12
3.00 0.513 8 13.18 152 .059 14 .445 -26
3.50 0.509 -14 10.47 138 .061 17 .444 -51
4.00 0.491 -20 8.89 125 .075 20 .468 -71
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 50mA
Power Dissipation 440mW
RF Input Power 100mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Absolute
Maximum
Typical Biasing Configuration
Part Number Ordering Information
Part Numbe r Devices P er Reel Reel Size
SLN-186-T R1 1000 7"
SLN-186-TR2 3000 13"
SLN-186-TR3 5000 13"
Recommen ded Bi as Re si s to r Val ue s
Supply Voltage(Vs) 3.3V 5V 7.5V 9V 12V 15V
Rbias (Ohms)
@ 8mA
Rbias (Ohms)
@ 6mA
* Needs active biasing for constant current source
*
188 500 688 1063 1438 2063
*
300 717 967 1467 1967 2800
Device Pinout
Pin Function
1 RF Input
2 Ground
RF Output
3
and Bias
4 Ground
20V
Low Noise MMICs
Device Outline
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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