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650nm Index-Guided Red Laser Diode
Description
The SLD1137VS is an index-guided red laser diode
for BCS.
Operating current is 25mA lower than SLD1133VS.
Features
• Small astigmatism (7µm typ.)
• Low operating current (35mA typ.)
• Small package (φ5.6mm)
• Single longitudinal mode
Applications
Bar code scanner
Structure
• AlGaInP MQW laser diode
• PIN photodiode to monitor laser beam output
Recommend Optical Power Output
5mW
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 7 mW
• Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +60 °C
• Storage temperature Tstg –40 to +85 °C
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E99202-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD1137VS
M-274
Pin Configuration
3
LD
1
2
PD
Common
21
3
Bottom View
1. LD cathode
2. PD anode
3. Common
Connection Diagram
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SLD1137VS
Electrical and Optical Characteristics (Tc = 25°C) Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop
λp
θ⊥
θ//
∆X, ∆Y, ∆Z
∆φ//
∆φ⊥
ηD
As
Imon
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW, VR = 5V
24
6
0.3
0.05
30
35
2.2
650
30
8
0.5
7
0.1
40
45
2.7
655
40
12
±80
±3
±3
0.8
15
0.5
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
Symbol Conditions Min. Typ. Max. Unit
Perpendicular
Parallel
Position
Angle
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SLD1137VS
60400
0 0.2
0.2
0
25°C
20
TC = 0°C 40°C
Imon
PO = 5mW
0.1
0
30–20 60
200
100
10
1
2
3
4
5
6
7
60°C25°CTC = 0°C 40°C 60°C
200–60
–40
–20 40 60
θ ⊥
Po = 5mW
Tc = 25°C
70
IF – Forward current [mA]
Imon – Monitor current [mA]
Po – Optical power output [mW]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Angle [degree]
Relative radiant intensity
Far field pattern (FFP)
Imon – Monitor current [mA]
Monitor current vs. Temperature characteristics
Tc – Case temperature [°C]
Ith – Threshold current [mA]
Threshold current vs. Temperature characteristics
–10 0 2010 5040 30–20 60 70
Tc – Case temperature [°C]
–10 0 2010 5040
θ //
Example of Representative Characteristics
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SLD1137VS
645 650 655 660 665
Tc = 0°C
Tc = 25°C
Tc = 40°C
Tc = 60°C
Po = 5mW
Temperature dependence of spectrum
Relative radiant intensity
λ – Wavelength [nm]
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SLD1137VS
645 650 655 660 665
Po = 1mW
Po = 5mW
Po = 7mW
Tc = 25°C
Power output dependence of spectrum
Relative radiant intensity
λ – Wavelength [nm]
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SLD1137VS
Package Outline Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot
1.0
0.5
90°
0.4
φ5.6 – 0.025
0
φ4.4 MAX
φ3.7 MAX
φ1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0.25
2.6 MAX
∗1.26
1.2 ± 0.1
6.5
2 3 1
3 – φ0.45
PCD φ2.0
∗Optical
Distance = 1.35 ± 0.08
1
2
3
M-274
PACKAGE WEIGHT
0.3g
M-274
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