Page 1
SKM 500 GA 174 D
GA
SEMITRANS 4
Absolute Maximum Ratings
Ω
case
4)
1)
= 25 °C
Symbol Conditions
V
CES
V
CGR
I
IC;
I
CM
V
GES
P
tot
Tj, (T
V
isol
humidity
climate
Inverse Diode
IF = –I
IFM = –I
I
FSM
I2t
CN
stg
)
C
CM
RGE = 20 k
T
= 25/80 °C
case
= 25/80 °C; tp = 1 ms
T
case
per IGBT, T
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
8)
T
= 25/80 °C
case
= 25/80 °C; tp = 1 ms
T
case
t
= 10 ms; sin.; Tj = 150 °C
p
= 10 ms; Tj = 150 °C
t
p
Characteristics
Symbol Conditions
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
g
fs
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inverse Diode
VF = V
VF = V
V
TO
r
t
I
RRM
Q
rr
Thermal ch aracteristics
R
thjc
R
thjc
R
thch
VGE = 0, IC = 8 mA
= VCE, IC = 18 mA
V
GE
= 0 Tj = 25 °C
V
GE
V
= V
CE
= 20 V, VCE = 0
V
GE
= 400 A VGE = 15 V;
I
C
I
= 500 A Tj = 25 (125) °C
C
= 20 V, IC = 400 A
V
CE
per IGBT
V
GE
V
CE
f = 1 MHz
V
CC
V
GE
IC = 400 A, ind. load
R
Gon
Tj = 125 °C (VCC = 900 V/1200 V)
= 60 nH (VCC = 900 V/1200 V)
L
S
8)
IF = 400 A VGE = 0 V;
EC
= 500 A Tj = 25 (125) °C
I
EC
F
T
= 125 °C
j
= 125 °C
T
j
= 400 A; Tj = 25 (125) °C
I
F
IF = 400 A; Tj = 25 (125) °C
per IGBT
per diode D
per module
1)
= 125 °C
CESTj
= 0
= 25 V
= 1200 V
= –15 V / +15 V
Goff
= 3
Ω
= R
3)
2)
2)
Values
Units
1700
1700
5)
440
600 /
1200 / 880
± 20
3100
–40 ... +150 (125)
3400
class 3K7/IE32
40/125/56
600 / 440
1200 / 880
4400
96800
V
V
A
A
V
W
°C
V
A
A
A
A2s
min. typ. max. Units
≥
V
4,5
CES
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5,5
0,1
16
–
2,8(3,2)
3,1(3,7)
220
–
27
3,8
1,3
–
350
100
1100
100
170/300
135/210
2,15(1,8)
2,3(2,0)
1,3
1,6
270(550)
70(117)
–
–
–
–
6,5
1
–
0,3
3,3(3,6)
–
–
1,4
–
–
–
20
–
–
–
–
–
–
2,4(2,2)
–
1,5
2,1
–
–
0,040
0,070
0,038
V
V
mA
mA
µ
V
V
S
nF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
m
A
µ
°C/W
°C/W
°C/W
A
Ω
C
SEMITRANS® M
Low Loss IGBT Modules
SKM 500 GA 174 D
Features
•
N channel, homogeneous Silicon
structure (NPT- Non p unchthrough IGBT)
•
Low inductance case
•
High short circuit capability,
self limiting
•
Fast & soft inverse CAL diodes
•
Without hard mould
•
Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
•
AC inverter drives on mains
575 - 750 V
•
DC bus voltage 750 - 1200 VDC
•
Public transport (auxiliary syst.)
•
Switching (not for linear use)
1)
T
= 25 °C, unless otherwise
case
specified
2)
IF = – IC, VR = 1200 V,
/dt = 5000 A/µs, VGE = 0 V
–di
F
3)
Use V
4)
Option V
„H4“ - on request
5)
Limited by term inals to I
= T
at T
c
8)
CAL = Controlled Axial Lifetime
Technology
AC
= – 5 ... – 15 V
GEoff
= 4000V/1 min add suf fix
isol
terminal
≤ 100 °C
C(DC)
= 500 A
8)
© by SEMIKRON 000828 B 6 – 73
Page 2
SKM 500 GA 174 D
4000
W
3000
2000
1000
P
tot
0
0 20406080100120140160
T
C
Fig. 1 Rated power dissipation P
800
mWs
600
m500ga17.xls - 1
°C
= f (TC) Fig. 2 Turn-on /-off energy = f (IC)
tot
m500ga17.xls - 3
= 125 °C
T
E
on
j
V
= 1200 V
CE
V
= + 15 V
GE
= 400 A
I
C
800
mWs
600
400
200
E
0
I
0 200 400 600 800
C
10000
A
1000
m500ga17.xls - 2
E
on
E
off
A
m500ga17.xls - 4
t
p =
20µs
100µs
= 125 °C
T
j
V
= 1200 V
CE
= + 15 V
V
GE
R
= 3
G
1 pulse
= 25 °C
T
C
≤
Tj
150 °C
Ω
400
200
E
0
0 5 10 15 20 25
R
G
E
off
Ω
100
10
I
C
1
V
CE
1 10 100 1000 10000
1ms
10ms
(DC)
V
Not for
linear use
Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
m500ga17.xls - 6
V
C
≤
Tj
150 °C
= ± 15 V
V
GE
≤
tsc
L
< 50 nH
ext
= 400 A
I
C
= f (VCE)
10 µs
I
Cpuls/IC
2,5
2
1,5
1
0,5
0
0 500 1000 1500 2000
V
CE
di/dt=1000A/µs
3000 A/µs
5000 A/µs
m500ga17.xls - 5
V
≤
Tj
150 °C
V
= ± 15 V
GE
R
= 3
Goff
IC = 400 A
Ω
12
10
8
6
4
2
I
CSC/IC
0
0 400 800 1200 1600 2000
V
CE
di/dt=1000A/µs
3000 A/µs
5000 A/µs
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I
B 6 – 74 000828 © by SEMIKRON
Page 3
SKM 500 GA 174 D
V15V13V11V9 V
I
CSC/ICN
10
FIGUR7.XLS-V1
VC = 1200 V
= 400 A
I
C
= 3
G
≤ 50 nH
ext
Ω
8
25°C
R
L
800
A
600
m500ga17.xls - 8
self-limiting
6
125°C
4
2
0
V
10 12 14 16 18 20
GE
V
400
200
I
C
0
0 20406080100120140160
T
C
Fig. 7 Short circuit current vs. turn-on gate voltage Fig. 8 Rated current vs. temperature I
1000
A
800
600
17
m500ga17.xls - 9
V
GE
=
1000
A
800
600
VGE=
17V
15V
13V
11V
m500ga17.xls - 10
°C
= f (TC)
C
= 150 °C
T
j
≥ 15V
V
GE
see rem.
5)
9V
400
200
I
C
0
V
CE
012345
V
400
200
I
C
0
V
012345
CE
V
Fig. 9 Typ. output characteristi c, tp = 80 µs; 25 °C Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
m500ga17.xls - 12
V
P
= V
cond(t)
V
V
typ.: r
max.: r
= V
CEsat(t)
CE(TO)(Tj)
CE(Tj)
CE(Tj)
valid for V
· I
CEsat(t)
CE(TO)(Tj)
C(t)
+ r
CE(Tj)
· I
C(t)
≤ 1,6 + 0,001 (Tj –25) [V]
= 0,003 + 0,000008 (Tj –25) [Ω]
= 0,0041 + 0,000006 (Tj –25) [Ω]
= + 15 [V]; IC > 0,3 I
GE
+2
–1
Cnom
1000
A
800
600
400
200
I
C
0
02468101214
V
G
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations Fig. 12 Typ. transfer characteristic, t
= 80 µs; VCE = 20 V
p
© by SEMIKRON 000828 B 6 – 75
Page 4
SKM 500 GA 174 D
20
V
16
12
8
4
V
GE
0
Q
0 1000 2000 3000 4000
Gate
800
m500ga17.xls - 13
1200V
nC
I
Cpuls
= 400 A
100,00
nF
10,00
1,00
C
0,10
V
0 102030
CE
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V
10000
ns
1000
m500ga17.xls - 15
t
doff
tdon
= 125 °C
T
j
V
= 1200 V
CE
V
= ± 15 V
GE
= 3
R
G
ind. load
10000
ns
Ω
1000
m500ga17.xls - 14
C
C
oes
C
CE
ies
res
V
m500ga17.xls - 16
t
doff
t
don
VGE = 0 V
f = 1 MHz
= 125 °C
T
j
V
= 1200 V
CE
V
= ± 15 V
GE
= 400 A
I
C
ind. load
t
f
100
tr
t
10
0 200 400 600 800
I
C
Fig. 15 Typ. switching times vs. I
800
Tj = 125°C typ.
A
T
= 25°C typ.
j
Tj =125°C max.
600
Tj= 25°C max.
400
200
I
F
0
V
F
0123
C
A
m500ga17.xls - 17
t
r
100
t
f
t
10
R
0 5 10 15 20 25
G
Fig. 16 Typ. switching times vs. gate resistor R
100
mJ
80
60
40
20
E
offD
0
V
0 200 400 600 800 1000
I
F
Ω
M500GA17.XLS-18
RG=
1,5Ω
2,7Ω
4 Ω
7 Ω
15 Ω
A
G
= 1200 V
V
CC
= 125 °C
T
j
V
= ± 15 V
GE
Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 76 000828 © by SEMIKRON
Page 5
SKM 500 GA 174 D
0,1
K/W
0,01
0,001
0,0001
Z
thJC
0,00001
0,00001 0,0001 0,001 0,01 0,1 1
t
p
single pulse
m500ga17.xls - 19
D=0,50
0,20
0,10
0,05
0,02
0,01
s
Fig. 19 Transient thermal impedance of IGBT
Z
= f (tp); D = tp / tc = tp · f
thJC
1000
A
800
M500GA17.XLS-22
RG=
1,5Ω
= 1200 V
V
CC
T
= 125 °C
j
= ± 15 V
V
GE
0,1
K/W
0,01
0,001
single pulse
Z
thJC
0,0001
0,00001 0,0001 0,001 0,01 0,1 1
t
p
m500ga17.xls - 20
D=0,5
0,2
0,1
0,05
0,02
0,01
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
800
A
700
2,7Ω
600
= f (tp); D = tp / tc = tp · f
thJC
M500GA17.XLS-23
RG=
1,5Ω
s
= 1200 V
V
CC
T
= 125 °C
j
= ± 15 V
V
GE
I
= 400 A
F
600
400
200
I
RR
0
I
F
0 200 400 600 800 1000
2,7Ω
4 Ω
7 Ω
15 Ω
A
Fig. 22 Typ. CAL diode peak reverse recovery
current I
200
µ
C
180
160
140
120
100
80
60
40
20
Q
rr
0
0 2000 4000 6000 8000 10000
diF/dt
= f (IF; RG)
RR
7 Ω
15
4 Ω
R
G
100 A
1,5
200 A
M500GA17.XLS-24
I
F
800 A
600 A
400 A
A/us
Fig. 24 Typ. CAL diode recovered charge
= 1200 V
V
CC
= 125 °C
T
j
V
= ± 15 V
GE
500
400
300
200
100
I
15 Ω
RR
0
0 2000 4000 6000 8000 10000
diF/dt
4 Ω
7 Ω
A/us
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
© by SEMIKRON 000828 B 6 – 77
Page 6
SKM 500 GA 174 D
SEMITRANS 4
Case D 59
UL Recognition
File no. E 63 532
SKM 500 GA 174 D
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions
min. typ. max.
M
1
M
2
a
w
This technical information specifies semiconductor de vi ce s but promises no characteristics. No w arran ty or g uara nte e expressed or
implied is made regarding delivery, performance or suitability.
to heatsink, SI Units (M6)
to heatsink, US Units
for terminals, SI Units (M6/M4)
for terminals, US Units
27
2,5/1,1
22/10
Values Units
3
–
–
–
–
–
–
–
–
5
44
5/2
44/18
5x9,81
330
Nm
lb.in.
Nm
lb.in.
m/s
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Twelve devices are supplied in one
SEMIBOX D without mounting hardware, which can be ordered separately under Ident No. 33321100
2
(for 10 SEMITRANS 4)
g
B 6 – 78 000828 © by SEMIKRON
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