Page 1
SKM400GB12E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
•V
• High short circuit capability, self limiting
• Soft switching 4. Generation CAL diode
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders at f
Remarks
• Case temperature limited to
T
T
rel. results valid for T
with positive temperature
CEsat
coefficient
to 6 x I
CNOM
(CAL4)
= 125°C max, recomm.
c
= -40 ... +150°C, product
op
= 150°
j
up to 20 kHz
sw
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
616 A
474 A
400 A
1200 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
440 A
329 A
400 A
1200 A
1980 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
80 °C 500 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=400A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC= 15.2 mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=400A
C
V
=±15V
GE
R
=1
G on
R
=1
G off
di/dt
= 9700 A/µs
on
di/dt
=4300A/µs
off
per IGBT 0.072 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
2.50 2.88 m
3.75 4.00 m
0.1 0.3 mA
mA
24.6 nF
1.62 nF
1.38 nF
2260 nC
1.9
242 ns
47 ns
33 mJ
580 ns
101 ns
56 mJ
GB
© by SEMIKRON Rev. 3 – 29.10.2010 1
Page 2
SKM400GB12E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
•V
• High short circuit capability, self limiting
• Soft switching 4. Generation CAL diode
• UL recognized, file no. E63532
with positive temperature
CEsat
coefficient
to 6 x I
CNOM
(CAL4)
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 400 A
EC
V
=0V
GE
chip
IF= 400 A
di/dt
=8800A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 0.14 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
2.3 2.5 m
3.1 3.4 m
450 A
68 µC
30.5 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
=25°C
T
terminal-chip
C
T
=125°C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 20 nH
0.25 m
0.5 m
Nm
w 325 g
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders at f
up to 20 kHz
sw
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
GB
2 Rev. 3 – 29.10.2010 © by SEMIKRON
Page 3
SKM400GB12E4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 3 – 29.10.2010 3
Page 4
SKM400GB12E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
4 Rev. 3 – 29.10.2010 © by SEMIKRON
Page 5
SKM400GB12E4
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON Rev. 3 – 29.10.2010 5
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