Page 1
SKM 300 GB 174 D
GB
SEMITRANS 3
Absolute Maximum Ratings
Ω
case
4)
1)
= 25 °C
Symbol Conditions
V
CES
V
CGR
I
IC;
I
CM
V
GES
P
tot
Tj, (T
V
isol
humidity
climate
Inverse Diode
IF = –I
IFM = –I
I
FSM
I2t
CN
stg
)
C
CM
RGE = 20 k
T
= 25/80 °C
case
= 25/80 °C; tp = 1 ms
T
case
per IGBT, T
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
8)
T
= 25/80 °C
case
= 25/80 °C; tp = 1 ms
T
case
t
= 10 ms; sin.; Tj = 150 °C
p
= 10 ms; Tj = 150 °C
t
p
Characteristics
Symbol Conditions
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
g
fs
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inverse Diode
VF = V
VF = V
V
TO
r
t
I
RRM
Q
rr
E
rr
Thermal ch aracteristics
R
thjc
R
thjc
R
thch
VGE = 0, IC = 6 mA
= VCE, IC = 9 mA
V
GE
= 0 Tj = 25 °C
V
GE
V
= V
CE
= 20 V, VCE = 0
V
GE
= 200 A VGE = 15 V;
I
C
I
= 300 A Tj = 25 (125) °C
C
= 20 V, IC = 200 A
V
CE
per IGBT
V
GE
V
CE
f = 1 MHz
V
CC
V
GE
IC = 200 A, ind. load
R
Gon
Tj = 125 °C (VCC = 900 V/1200 V)
= 60 nH (VCC = 900 V/1200 V)
L
S
8)
IF = 200 A VGE = 0 V;
EC
= 300 A Tj = 25 (125) °C
I
EC
F
T
= 125 °C
j
= 125 °C
T
j
= 200 A; Tj = 25 (125) °C
I
F
IF = 200 A; Tj = 25 (125) °C
IF = 200 A; Tj = 25 (125) °C
per IGBT
per diode D
per module (50 µm grease)
1)
= 125 °C
CESTj
= 0
= 25 V
= 1200 V
= –15 V / +15 V
= 6,8
Ω
= R
Goff
3)
2)
2)
2)
Values
Units
1700
1700
320 / 230
640 / 460
± 20
1800
–40 ... +150 (125)
3400
class 3K7/IE32
40/125/56
390 / 260
640 / 460
2200
24200
V
V
A
A
V
W
°C
V
A
A
A
A2s
min. typ. max. Units
≥
V
4,5
80
CES
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5,5
0,1
8
–
2,8(3,25)
3,3(3,8)
110
–
14
2,0
0,6
–
100
100
900
150
90/125
65/95
2,15(1,9)
2,4(2,2)
1,3
3
100(200)
24(50)
10(18)
–
–
–
–
6,5
1
–
0,2
3,3(3,8)
–
–
0,7
–
–
–
20
–
–
–
–
–
–
2,4(2,25)
2,75(2,5)
1,5
4
–
–
–
0,07
0,125
0,038
V
V
mA
mA
µ
V
V
S
nF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
m
A
µ
mWs
°C/W
°C/W
°C/W
A
Ω
C
SEMITRANS® M
Low Loss IGBT Modules
SKM 300 GB 174 D
Features
•
N channel, homogeneous Silicon
structure (NPT- Non p unchthrough IGBT)
•
Low inductance case
•
High short circuit capability,
self limiting
•
Fast & soft inverse CAL diodes
•
Without hard mould
•
Isolated copper baseplate using
DCB Direct Copper Bonding
•
Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
•
AC inverter drives on mains
575 - 750 V
•
DC bus voltage 750 - 1200 VDC
•
Public transport (auxiliary syst.)
•
Switching (not for linear use)
1)
T
= 25 °C, unless otherwise
case
specified
2)
IF = – IC, VR = 1200 V,
–diF/dt = 2000 A/µs, VGE = 0 V
3)
Use V
4)
Option V
„H4“ - on request
8)
CAL = Controlled Axial Lifetime
Technology
AC
= -5 ... -15 V
GEoff
= 4000V/1 min add suf fix
isol
8)
© by SEMIKRON 000828 B 6 – 67
Page 2
SKM 300 GB 174 D
2000
W
1600
1200
800
400
P
tot
0
0 20406080100120140160
T
C
Fig. 1 Rated power dissipation P
400
mW
300
tot
m300gb17.xls - 1
°C
400
mWs
300
200
100
E
0
I
0 100 200 300 400 500
C
= f (TC) Fig. 2 Turn-on /-off energy = f (IC)
m300gb17.xls - 3
E
on
T
= 125 °C
j
V
= 1200 V
CE
V
= ± 15 V
GE
= 200 A
I
C
1000
A
100
m300gb17.xls - 2
E
on
E
off
A
m300gb17.xls - 4
t
p =
33 µs
100µs
= 125 °C
T
j
= 1200 V
V
CE
V
= ± 15 V
GE
R
= 7
G
1 pulse
T
= 25 °C
C
≤
Tj
150 °C
Ω
1ms
200
100
E
0
0 1020304050
R
G
E
off
Ω
10
10ms
1
I
C
0,1
V
CE
1 10 100 1000 10000
(DC)
Not for
linear use
V
Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
2,5
2
1,5
1
0,5
I
Cpuls/IC
0
0 500 1000 1500 2000
V
CE
di/dt=1000A/µs
3000 A/µs
5000 A/µs
m300gb17.xls - 5
V
≤
Tj
150 °C
= 15 V
V
GE
R
= 7
goff
= 200 A
I
C
12
Ω
10
8
6
4
2
I
CSC/IC
0
0 400 800 1200 1600 2000
V
CE
di/dt=1000A/µs
3000 A/µs
5000 A/µs
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
m300gb17.xls - 6
V
≤
Tj
150 °C
= ± 15 V
V
GE
≤
tsc
10 µs
L
< 50 nH
ext
= 200 A
I
C
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I
= f (VCE)
C
B 6 – 68 000828 © by SEMIKRON
Page 3
SKM 300 GB 174 D
I
CSC/ICN
10
FIGUR7.XLS-V1
V
= 1200 V
C
= 200 A
I
C
≥ 7
G
< 50 nH
ext
Ω
8
25°C
R
L
500
A
400
m300gb17.xls - 8
self-limiting
6
125°C
4
2
0
V
10 12 14 16 18 20
GE
V
300
200
100
I
C
0
0 20406080100120140160
T
C
Fig. 7 Short circuit current vs. turn-on gate voltage Fig. 8 Rated current vs. temperature I
600
A
500
400
300
V
17V
15V
13V
11V
9 V
m300gb17.xls - 9
GE
=
600
A
500
400
300
VGE=
17V
15V
13V
11V
9V
m300gb17.xls - 10
°C
= f (TC)
C
= 150 °C
T
j
≥ 15V
V
GE
200
100
I
C
0
V
CE
0123456
V
200
100
I
C
0
V
0123456
C
V
Fig. 9 Typ. output characteristi c, tp = 250 µs; Tj = 25 °C Fig. 10 Typ. out pu t ch ar acteristi c, tp = 250 µs; Tj = 125 °C
m300gb17.xls - 12
V
P
= V
cond(t)
V
V
typ: r
max: r
= V
CEsat(t)
CE(TO)(Tj)
CE(Tj)
CE(Tj)
valid for V
· I
CEsat(t)
CE(TO)(Tj)
C(t)
+ r
CE(Tj)
· I
C(t)
≤ 1,5 + 0,001 (Tj –25) [V]
= 0,0065 + 0,000018 (Tj –25) [Ω]
≤ 0,0088 + 0,000023 (Tj –25) [Ω]
≤ + 15 [V]; IC > 0,3 I
GE
+2
–1
Cnom
600
A
500
400
300
200
100
I
C
0
0 2 4 6 8 10 12 14
V
G
Fig. 11 Typ. saturation characteristic (IGBT)
Calculation elements and equations Fig. 12 Typ. transfer characteristic, t
= 250 µs; VCE = 20 V
p
© by SEMIKRON 000828 B 6 – 69
Page 4
SKM 300 GB 174 D
20
V
16
12
8
4
V
GE
0
Q
0 400 800 1200 1600 2000
Gate
800
m300gb17.xls - 13
1200V
nC
I
Cpuls
= 200 A
100,00
nF
10,00
1,00
0,10
C
0,01
V
0102030
CE
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V
10000
ns
1000
m300gb17.xls - 15
t
doff
= 125 °C
T
j
V
= 1200 V
CC
V
= ± 15 V
GE
= 7
R
g
10000
ns
Ω
1000
m300gb17.xls - 14
CE
m300gb17.xls - 16
VGE = 0 V
V
f = 1 MHz
T
= 125 °C
j
V
= 1200 V
CC
V
= ± 15 V
GE
= 200 A
I
C
C
ies
C
oes
C
res
t
doff
t
f
100
tdon
t
tr
10
0 100 200 300 400 500
I
C
Fig. 15 Typ. switching times vs. I
400
Tj = 125°C typ.
A
300
200
100
I
F
0
= 25°C typ.
T
j
Tj =125°C max.
Tj= 25°C max.
V
F
0123
C
A
m300gb17.xls - 17
t
don
t
r
100
t
f
t
10
R
0 1020304050
G
Fig. 16 Typ. switching times vs. gate resistor R
60
mJ
50
40
30
20
10
E
offD
V
0
0 100 200 300 400 500
I
F
m300gb17.xls - 18
RG =
4 Ω
6 Ω
9 Ω
18 Ω
45 Ω
Ω
A
G
VCC = 1200 V
T
= 125 °C
j
= ± 15 V
V
GE
Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 70 000828 © by SEMIKRON
Page 5
SKM 300 GB 174 D
0,1
K/W
0,01
0,001
0,0001
Z
thJC
0,00001
single pulse
0,00001 0,0001 0,001 0,01 0,1 1
t
p
m300gb17.xls - 19
D=0,50
0,20
0,10
0,05
0,02
0,01
s
Fig. 19 Transient thermal impedance of IGBT
Z
= f (tp); D = tp / tc = tp · f
thJC
700
A
600
500
400
300
200
m300gb17.xls - 22
R
G
4 Ω
6 Ω
9 Ω
18 Ω
= 1200 V
V
CC
T
= 125 °C
j
V
= ± 15 V
GE
1
K/W
0,1
0,01
Z
thJC
0,001
0,00001 0,0001 0,001 0,01 0,1 1
t
p
single pulse
m300gb17.xls - 20
D=0,5
0,2
0,1
0,05
0,02
0,01
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
700
A
600
500
400
9 Ω
300
18 Ω
200
6 Ω
= f (tp); D = tp / tc = tp · f
thJC
m300gb17.xls - 23
RG=
4 Ω
s
= 1200 V
V
CC
T
= 125 °C
j
V
= ± 15 V
GE
= 200 A
I
F
100
I
RR
0
I
0 100 200 300 400 500
F
45 Ω
A
Fig. 22 Typ. CAL diode peak reverse recovery
current I
120
µC
100
80
18
60
40
20
Q
rr
0
di
/dt
0 3000 6000 9000 12000
F
= f (IF; RG)
RR
9 Ω
6 Ω
RG=
100 A
50 A
m300gb17.xls - 24
4 Ω
IF=
400 A
300 A
200 A
A/µs
= 1200 V
V
CC
T
= 125 °C
j
V
= ± 15 V
GE
100
I
RR
45 Ω
0
/dt
di
F
0 4000 8000 12000
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON 000828 B 6 – 71
Page 6
SKM 300 GB 174 D
SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532
SKM 200 GB 174 D
SKM 300 GB 174 D
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions
M
1
M
2
a
w
to heatsink, SI Units (M6)
to heatsink, US Units
for terminals, SI Units (M6)
for terminals, US Units
Values Units
min. typ. max.
3
27
2,5
22
–
–
–
–
–
–
–
–
5
44
5
44
5x9,81
325
Nm
lb.in.
Nm
lb.in.
m/s
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Twelve devices are supplied in one
SEMIBOX D without mounting hardware, which can be ordered separately under Ident No. 33321100
2
(for 10 SEMITRANS 3)
This technical information specifies semiconductor de vi ce s but promises no characteristics. No w arran ty or g uara nte e expressed or
implied is made regarding delivery, performance or suitability.
B 6 – 72 000828 © by SEMIKRON
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