Page 1
SKM25GD125D
SEMITRANS® 6
IGBT modules
SKM25GD125D
Target Data
Features
•V
• High short circuit capability, self limiting
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
• Three phase inverters for AC motor
• Pulse frequencies also above 15 kHz
• DC servo and robot drives
with positive temperature
CE(sat)
coefficient
to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
speed control
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
I
= 2xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
39 A
27 A
25 A
50 A
-20 ... 20 V
VCC= 600 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=125°C
T
j
10 µs
-55 ... 150 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 150 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
47 A
32 A
40 A
80 A
410 A
-40 ... 150 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
100 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=25A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 1 mA 4.5 5.5 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 20 V
Tj=25°C
VCC= 600 V
I
=25A
C
V
=±15V
GE
R
=16
G on
R
=16
G off
per IGBT 0.56 K/W
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
T
=125°C
j
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
3.20 3.70 V
3.60 4.20 V
1.5 1.75 V
1.7 1.95 V
68.00 78.00 m
76.00 90.00 m
0.1 0.3 mA
mA
1.65 nF
0.25 nF
0.11 nF
221 nC
0.00
25 ns
19 ns
3.9 mJ
184 ns
8ns
1.6 mJ
GD
© by SEMIKRON Rev. 1 – 05.12.2012 1
Page 2
SKM25GD125D
SEMITRANS® 6
IGBT modules
SKM25GD125D
Target Data
Features
•V
• High short circuit capability, self limiting
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
with positive temperature
CE(sat)
coefficient
to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF=40A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=25A
di/dt
=2500A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 1 K/W
T
=25°C
j
=125°C
T
j
=25°C
T
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
2.13 2.65 V
1.94 2.46 V
1.1 1.45 V
0.85 1.2 V
25.7 30.0 m
27.1 31.4 m
50 A
4µC
1.1 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
=25°C
T
terminal-chip
C
T
=125°C
C
per module 0.05 K/W
to heat sink M6 4 5 Nm
60 nH
m
m
Nm
Nm
w 175 g
Typical Applications*
• Three phase inverters for AC motor
speed control
• Pulse frequencies also above 15 kHz
• DC servo and robot drives
GD
2 Rev. 1 – 05.12.2012 © by SEMIKRON
Page 3
SKM25GD125D
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 6: Typ. gate charge characteristic Fig. 7: Typ. switching times vs. I
© by SEMIKRON Rev. 1 – 05.12.2012 3
C
Page 4
SKM25GD125D
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
4 Rev. 1 – 05.12.2012 © by SEMIKRON
Page 5
SKM25GD125D
SEMITRANS 6
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 1 – 05.12.2012 5
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