Page 1
SKM200GB12T4
SEMITRANS®3
Fast IGBT4 Modules
SKM200GB12T4
Features
•V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T
T
rel. results valid for T
with positive temperature
CE(sat)
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
= 125°C max, recomm.
c
= -40 ... +150°C, product
op
= 150°
j
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
314 A
242 A
200 A
600 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
= 150 °C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
229 A
172 A
200 A
600 A
990 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min 4000 V
500 A
-40 ... 125 °C
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=200A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC=7.6mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE=- 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=200A
C
V
=±15V
GE
R
=1Ω
G on
R
=1Ω
G off
di/dt
= 5500 A/µs
on
di/dt
= 2300 A/µs
off
per IGBT 0.14 K/W
T
=25°C
j
= 150 °C
T
j
Tj=25°C
T
= 150 °C
j
T
=25°C
j
T
= 150 °C
j
T
=25°C
j
T
= 150 °C
j
f=1MHz
f=1MHz
f=1MHz
T
= 150 °C
j
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
5.0 5.8 mΩ
7.5 8.0 mΩ
0.1 0.3 mA
mA
12.3 nF
0.81 nF
0.69 nF
1130 nC
3.8 Ω
185 ns
40 ns
21 mJ
425 ns
82 ns
20 mJ
GB
© by SEMIKRON Rev. 2 – 16.06.2009 1
Page 2
SKM200GB12T4
SEMITRANS®3
Fast IGBT4 Modules
SKM200GB12T4
Features
•V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
with positive temperature
CE(sat)
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF=200A
EC
V
=0V
GE
chip
IF=200A
di/dt
= 4450 A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 0.26 K/W
T
=25°C
j
= 150 °C
T
j
Tj=25°C
T
= 150 °C
j
Tj=25°C
T
= 150 °C
j
T
= 150 °C
j
Tj= 150 °C
Tj= 150 °C
2.2 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
4.5 5.1 mΩ
6.3 6.8 mΩ
174 A
33 µC
13 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
=25°C
T
terminal-chip
C
T
= 125 °C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 20 nH
0.25 mΩ
0.5 mΩ
Nm
w 325 g
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
GB
2 Rev. 2 – 16.06.2009 © by SEMIKRON
Page 3
SKM200GB12T4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 2 – 16.06.2009 3
Page 4
SKM200GB12T4
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
4 Rev. 2 – 16.06.2009 © by SEMIKRON
Page 5
SKM200GB12T4
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON Rev. 2 – 16.06.2009 5
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