Page 1
SKiM601MLI07E4
SKiM® 4
IGBT Modules
SKiM601MLI07E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
•UPS
•3 Level Inverter
Remarks
• Case temperature limited to
T
T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
= 125°C max, recommended
c
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 2xI
CRM
Cnom
T
=25°C
s
T
=70°C
s
650 V
438 A
345 A
600 A
1200 A
-20 ... 20 V
VCC= 360 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 650 V
=150°C
T
j
6µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
357 A
275 A
600 A
1200 A
3240 A
-40 ... 175 °C
Clamping diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
334 A
256 A
400 A
800 A
2646 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
400 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=600A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC= 9.6 mA 5 5.8 6.5 V
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
1.45 1.85 V
1.70 2.10 V
0.9 1 V
0.85 0.9 V
0.9 1.4 m
1.4 2.0 m
mA
mA
37.01 nF
2.31 nF
1.10 nF
4800 nC
0.7
MLI
© by SEMIKRON Rev. 0 – 01.10.2013 1
Page 2
SKiM601MLI07E4
SKiM® 4
IGBT Modules
SKiM601MLI07E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
•UPS
•3 Level Inverter
Remarks
• Case temperature limited to
T
T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
= 125°C max, recommended
c
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCE= 300 V
I
=600A
C
R
=2
G on
R
=2
G off
di/dt
= 2087 A/µs
on
di/dt
=2270A/µs
off
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
121 ns
232 ns
6.05 mJ
599 ns
156 ns
44 mJ
0.19 K/W
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 600 A
EC
V
=0V
GE
chiplevel
VGE=-15V
V
= 300 V
R
per diode 0.27 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
1.5 1.9 V
1.6 2.0 V
0.95 1.04 1.236 V
0.85 0.99 V
0.6 0.8 1.2 m
1.2 1.7 m
A
29 µC
mJ
Clamping diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 400 A
EC
V
=0V
GE
chiplevel
VGE=-15V
V
= 300 V
R
per diode 0.29 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
1.4 1.8 V
1.4 1.8 V
0.95 1.04 1.236 V
0.85 0.99 V
0.6 0.9 1.3 m
1.3 1.9 m
133 A
µC
2.4 mJ
Module
L
CE
R
CC'+EE'
M
s
M
t
T
=25°C
terminal-chip
s
T
=125°C
s
to heat sink (M5) 2 3 Nm
to terminals M6 4 5 Nm
22 nH
1.35 m
1.75 m
w317g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 k) 493 ± 5%
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
MLI
2 Rev. 0 – 01.10.2013 © by SEMIKRON
Page 3
SKiM601MLI07E4
Fig. 3: Typ. IGBT output characteristic, inclusive R
Fig. 6: Typ. turn-on /-off energy = f (IC) Fig. 8: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig.4: Typ. Diode output characteristic
Fig. 10: Gate charge characteristic Fig. 12: Typ. switching times vs. gate resistor R
© by SEMIKRON Rev. 0 – 01.10.2013 3
G
Page 4
SKiM601MLI07E4
Fig. 14: Typ. switching times vs. I
C
Fig. 15 Typ. IGBTs and DIODEs transient thermal
impedence
4 Rev. 0 – 01.10.2013 © by SEMIKRON
Page 5
SKiM601MLI07E4
SKiM 4
MLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 0 – 01.10.2013 5
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