Datasheet SKiM301TMLI12E4B DataSheet (Semikron)

Page 1
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4B
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 1
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
279 A
213 A
311 A
252 A
300 A
900 A
-20 ... 20 V
VCC= 800 V V
t
psc
T
j
GE
V
CES
15 V
1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 2
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
650 V
221 A
164 A
248 A
197 A
300 A
600 A
-20 ... 20 V
VCC= 360 V V
t
psc
T
j
GE
V
CES
15 V
650 V
=150°C
T
j
10 µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C,
400 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
TMLI
© by SEMIKRON Rev. 0 – 27.09.2013 1
Page 2
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4B
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
249 A
196 A
249 A
196 A
300 A
I
FRM
= 3 x I
Fnom
900 A
10 ms, sin 180°, Tj= 150 °C 1485 A
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 2
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
Tj= 175 °C
I
= 2xI
FRM
10 ms sin 180°
Fnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
T
=25°C
j
T
=150°C
j
650 V
266 A
205 A
266 A
205 A
300 A
600 A
2160 A
1980 A
-40 ... 175 °C
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
TMLI
2 Rev. 0 – 27.09.2013 © by SEMIKRON
Page 3
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4B
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=300A V
=15V
GE
chiplevel
chiplevel
VGE=15V chiplevel
VGE=VCEV, IC= 11.4 mA
VGE=0V V
= 1200 V
CE
VCE=25V V
=0V
GE
G
- 8 V...+ 15 V 1695 nC
Tj=25°C VCE= 300 V
I
=300A
C
R
=2.7
G on
R
=2.7
G off
di/dt
= 5626 A/µs
on
di/dt
=2636A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT 0.19 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
3.3 3.8 m
5.0 5.3 m
55.86.5V
mA
mA
18.45 nF
1.215 nF
1.035 nF
2.50
217.9 ns
69.43 ns
6.62 mJ
355.5 ns
91.3 ns
19.37 mJ
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=300A V
=15V
GE
chiplevel
chiplevel
VGE=15V chiplevel
VGE=VCEV, IC=8mA
VGE=0V V
= 650 V
CE
VCE=25V V
=0V
GE
G
- 8 V...+ 15 V nC
Tj=25°C VCE= 300 V
I
=300A
C
R
=2.7
G on
R
=2.7
G off
di/dt
= 5566 A/µs
on
di/dt
=1353A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT 0.3 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
T
=25°C
j
=150°C
T
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.55 1.95 V
1.75 2.2 V
0.9 1 V
0.82 0.9 V
2.2 3.2 m
3.1 4.3 m
5.1 5.8 6.4 V
mA
mA
18.48 nF
nF
0.548 nF
1.00
149.14 ns
79.71 ns
2.78 mJ
420 ns
180 ns
17.48 mJ
TMLI
© by SEMIKRON Rev. 0 – 27.09.2013 3
Page 4
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 1
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 300 A
EC
V
=15V
GE
chiplevel
chiplevel
chiplevel
IF= 300 A
V
= 300 V
R
per DIODE 0.29 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
2.20 2.52 V
2.15 2.47 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
2.7 3.0 3.4 m
3.5 4.2 4.6 m
132.43 A
21.47 µC
1.79 mJ
SKiM301TMLI12E4B
• IGBT 4 Trench Gate Technology
•Solder technology
•V
with positive temperature
CE(sat)
coefficient
• Low inductance case
• Isolated by Al
DCB (Direct Copper
2O3
Bonded) ceramic substrate
• Pressure contact technology for thermal contacts
• Spring contact system to attach driver PCB to the control terminals
• High short circuit capability, self limiting to 6 x I
C
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 2
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 300 A
EC
chiplevel
chiplevel
chiplevel
IF= 300 A
V
= 300 V
R
per DIODE 0.35 K/W
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
1.4 1.80 V
1.39 1.77 V
0.95 1.04 1.236 V
0.85 0.99 V
0.8 1.2 1.8 m
1.8 2.6 m
126.64 A
23.84 µC
1.7 mJ
TMLI
4 Rev. 0 – 27.09.2013 © by SEMIKRON
Page 5
SKiM301TMLI12E4B
SKiM® 4
Characteristics
Symbol Conditions min. typ. max. Unit
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
s
T
=125°C
s
per module K/W
to heat sink (M5) 2 3 Nm
to terminals M6
45Nm
18 nH
1.35 m
1.75 m
Nm
w317g
Trench IGBT Modules
SKiM301TMLI12E4B
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Characteristics
Symbol Conditions min. typ. max. Unit
Temperature Sensor
R
100
B
100/125
Tr=100°C, tolerance=3%
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
K
Remarks
• Case temperature limited to Ts = 125°C max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
TMLI
© by SEMIKRON Rev. 0 – 27.09.2013 5
Page 6
SKiM301TMLI12E4B
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
6 Rev. 0 – 27.09.2013 © by SEMIKRON
Page 7
SKiM301TMLI12E4B
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. diodes transient thermal impedance Fig. 12: Typ. IGBTs transient thermal impedance
© by SEMIKRON Rev. 0 – 27.09.2013 7
Page 8
SKiM301TMLI12E4B
8 Rev. 0 – 27.09.2013 © by SEMIKRON
Page 9
SKiM301TMLI12E4B
TMLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 0 – 27.09.2013 9
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