SKiM301MLI12E4
SKiM® 4
Trench IGBT Modules
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications
•UPS
•3 Level Inverter
Remarks*
• Case temperature limited to Ts = 125°C
• Recommended T
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 ...+150°C
jop
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT1
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
311 A
252 A
300 A
900 A
-20 ... 20 V
10 µs
-40 ... 175 °C
IGBT2
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
311 A
252 A
300 A
900 A
-20 ... 20 V
10 µs
-40 ... 175 °C
Diode1
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
282 A
223 A
300 A
I
FRM
= 3 x I
Fnom
900 A
10 ms, sin 180°, Tj= 25 °C 1485 A
-40 ... 175 °C
Diode2
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
282 A
223 A
300 A
I
FRM
= 3 x I
Fnom
900 A
10 ms, sin 180°, Tj= 25 °C 1485 A
-40 ... 175 °C
Diode5
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
219 A
172 A
300 A
I
FRM
= 3 x I
Fnom
900 A
10 ms, sin 180°, Tj= 25 °C 1620 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50 Hz, t = 1 min 2500 V
400 A
-40 ... 125 °C
MLI
© by SEMIKRON Rev. 4.0 – 10.06.2016 1
SKiM301MLI12E4
SKiM® 4
Trench IGBT Modules
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications
•UPS
•3 Level Inverter
Remarks*
• Case temperature limited to Ts = 125°C
• Recommended T
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 ...+150°C
jop
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=11.4mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
VGE= - 15 V...+ 15 V
Tj=25°C
VCE= 600 V
I
=300A
C
V
= +15/-15 V
GE
R
=1Ω
G on
R
=1Ω
G off
di/dt
= 5700 A/µs
on
di/dt
=2600A/µs
off
per IGBT 0.19 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.80 2.05 V
2.20 2.40 V
0.80 0.90 V
0.70 0.80 V
3.3 3.8 mΩ
5.0 5.3 mΩ
55.86.5V
4mA
18.45 nF
1.215 nF
1.035 nF
2400 nC
2.5 Ω
182 ns
52 ns
22.2 mJ
446 ns
98 ns
33.9 mJ
IGBT2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=11.4mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
VGE= - 15 V...+ 15 V
Tj=25°C
VCE= 600 V
I
=300A
C
V
= +15/-15 V
GE
R
=1Ω
G on
R
=1Ω
G off
di/dt
= 4960 A/µs
on
di/dt
=1840A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.80 2.05 V
2.20 2.40 V
0.80 0.90 V
0.70 0.80 V
3.3 3.8 mΩ
5.0 5.3 mΩ
55.86.5V
4mA
18.45 nF
1.215 nF
1.035 nF
2400 nC
2.5 Ω
184 ns
59 ns
11 mJ
457 ns
73 ns
35.8 mJ
R
th(j-s)
per IGBT 0.19 K/W
MLI
2 Rev. 4.0 – 10.06.2016 © by SEMIKRON
SKiM301MLI12E4
SKiM® 4
Trench IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Unit
Diode1
V
V
r
F
I
RRM
Q
E
F
F0
rr
rr
= V
EC
IF= 300 A
chiplevel
chiplevel
chiplevel
IF= 300 A
di/dt
=5000A/µs
off
V
= 600 V
R
V
= +15/-15 V
GE
=25°C
T
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.30 1.50 V
0.90 1.10 V
3.0 3.4 mΩ
4.2 4.6 mΩ
320 A
54.7 µC
21.8 mJ
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
with positive temperature
CE(sat)
coefficient
• Low inductance case
•Insulated by Al
DCB (Direct Copper
2O3
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x I
C
• Integrated temperature sensor
Typical Applications
•UPS
•3 Level Inverter
Remarks*
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
= -40 ...+150°C
jop
R
th(j-s)
Diode2
V
= V
F
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
Diode5
V
= V
F
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
EC
EC
IF= 300 A
chiplevel
chiplevel
chiplevel
IF= 300 A
di/dt
=5000A/µs
off
V
= 600 V
R
V
= +15/-15 V
GE
IF= 300 A
chiplevel
chiplevel
chiplevel
IF= 300 A
di/dt
=5700A/µs
off
V
= 600 V
R
V
= +15/-15 V
GE
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
0.24 K/W
2.20 2.52 V
2.15 2.47 V
1.30 1.50 V
0.90 1.10 V
3.0 3.4 mΩ
4.2 4.6 mΩ
320 A
54.7 µC
-mJ
0.24 K/W
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
2.8 3.2 mΩ
3.9 4.3 mΩ
322 A
53 µC
24 mJ
0.36 K/W
MLI
© by SEMIKRON Rev. 4.0 – 10.06.2016 3
SKiM301MLI12E4
SKiM® 4
Trench IGBT Modules
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Characteristics
Symbol Conditions min. typ. max. Unit
Module
L
sCE1
L
sCE2
R
CC'+EE'
M
s
M
t
measured
between terminal 4
and 24
T
=25°C
s
=125°C
T
s
to heat sink M5 2 3 Nm
to terminals M6
45Nm
32 nH
25 nH
0.4 mΩ
0.6 mΩ
Nm
w317g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
Typical Applications
•UPS
•3 Level Inverter
Remarks*
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
= -40 ...+150°C
jop
MLI
4 Rev. 4.0 – 10.06.2016 © by SEMIKRON
SKiM301MLI12E4
Fig. 1: Typ. IGBT1 output characteristic, incl. R
Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG)
CC'+ EE'
Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts)
Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic
© by SEMIKRON Rev. 4.0 – 10.06.2016 5
SKiM301MLI12E4
Fig. 7: Typ. IGBT1 switching times vs. I
C
Fig. 8: Typ. IGBT1 switching times vs. gate resistor R
Fig. 9: Transient thermal impedance of IGBT1 & Diode5 Fig. 10: Typ. Diode5 forward characteristic, incl. R
G
CC'+ EE'
Fig. 13: Typ. IGBT2 output characteristic, incl. R
CC'+ EE'
Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Ts)
6 Rev. 4.0 – 10.06.2016 © by SEMIKRON
SKiM301MLI12E4
Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG)
Fig. 17: Typ. IGBT2 transfer characteristic Fig. 18: Typ. IGBT2 gate charge characteristic
Fig. 19: Typ. IGBT2 switching times vs. I
© by SEMIKRON Rev. 4.0 – 10.06.2016 7
C
Fig. 20: Typ. IGBT2 switching times vs. gate resistor R
G
SKiM301MLI12E4
Fig. 21: Transient thermal impedance of IGBT2, Diode1
& Diode2
Fig. 22: Typ. Diode1 & Diode2 forward characteristic,
incl. R
CC'+ EE'
8 Rev. 4.0 – 10.06.2016 © by SEMIKRON
SKiM301MLI12E4
SKiM 4
MLI
© by SEMIKRON Rev. 4.0 – 10.06.2016 9
SKiM301MLI12E4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
10 Rev. 4.0 – 10.06.2016 © by SEMIKRON
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