Page 1
SKiiP38GB12E4V1
MiniSKiiP® 3 Dual
SKiiP38GB12E4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
329 A
266 A
300 A
900 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3 x I
FRM
Fnom
10 ms, sin 180°, Tj= 150 °C 1485 A
j
=25°C
s
T
=70°C
s
267 A
211 A
300 A
900 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
280 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Remarks
Max. case temperature limited to TC=
125°C
Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=12mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 1700 nC
Tj=25°C
VCC= 600 V
I
=300A
C
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 6995 A/µs
on
di/dt
=3030A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
3.5 4 mΩ
5.2 5.5 mΩ
55.86.5V
0.1 0.3 mA
mA
17.60 nF
1.16 nF
0.94 nF
2.5 Ω
180 ns
51 ns
19.1 mJ
455 ns
96 ns
du/dt = 5280 V/µs
V
E
R
off
th(j-s)
= +15/-15 V
GE
L
=25nH
s
per IGBT, λ
paste
Tj=150°C
=0.8 W/K*m
34.6 mJ
0.17 K/W
GB
© by SEMIKRON Rev. 1 – 10.03.2015 1
Page 2
SKiiP38GB12E4V1
MiniSKiiP® 3 Dual
SKiiP38GB12E4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF= 300 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 300 A
di/dt
=7005A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.2 2.5 V
2.2 2.5 V
1.3 1.5 V
0.9 1.1 V
33.4mΩ
4.2 4.6 mΩ
353 A
49 µC
21.5 mJ
0.26 K/W
Module
L
CE
M
s
to heat sink 2 2.5 Nm
15 nH
w76g
Temperature Sensor
R
B
100
25/85
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R25
*exp[B
*(1/T-1/298)], [T]=K 3420 K
25/85
Remarks
Max. case temperature limited to TC=
125°C
Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
GB
2 Rev. 1 – 10.03.2015 © by SEMIKRON
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SKiiP38GB12E4V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 1 – 10.03.2015 3
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SKiiP38GB12E4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 1 – 10.03.2015 © by SEMIKRON
Page 5
SKiiP38GB12E4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 1 – 10.03.2015 5
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