Page 1
SKiiP 3614 GB12E4-6DUW
Absolute Maximum Ratings
Symbol Conditions Values Unit
System
1)
V
SKiiP® 4
2-pack-integrated intelligent
Power System
SKiiP 3614 GB12E4-6DUW
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
•T
= 175°C
jmax
• Safety isolated switching and sensor
signals
• Digital signal transmission
•CAN Interface
• 100% tested IPM
•RoHS compliant
• UL file no. E242581
Typical Applications*
• Renewable energies
•Traction
•Elevators
• Industrial drives
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature T
is 150°C
vjop
CC
V
isol
I
t(RMS)
I
max (peak)
I
FSM
I²t
f
out
T
stg
IGBT
V
CES
I
C
I
Cnom
2)
T
j
Diode
V
RRM
I
F
I
Fnom
2)
T
j
Driver
V
s
V
iH
dv/dt secondary to primary side 75 kV/µs
f
sw
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
+ E
E
on
R
th(j-s)
R
th(j-r)
Operating DC link voltage 900 V
DC, t = 1 s, each polarity 4300 V
per AC terminal, rms, sinusoidal current 500 A
max. peak current of power section 5400 A
Tj= 175 °C, tp= 10 ms, sin 180°
T
fundamental output frequency
(sinusoidal)
storage temperature -40 ... 85 °C
Tj=25°C
Tj= 175 °C
junction temperature -40 ... 175 °C
Tj=25°C
Tj= 175 °C
junction temperature -40 ... 175 °C
power supply 19.2 ... 28.8 V
input signal voltage (high) Vs + 0.3 V
switching frequency 5 kHz
IC= 3600 A
at terminal
at terminal
IC= 3600 A
off
T
per IGBT switch 0.0106 K/W
per IGBT switch 0.0077 K/W
= 175 °C, tp=10ms, diode
j
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
T
=25°C
j
T
=150°C
j
Tj=25°C
=150°C
T
j
T
=25°C
j
T
=150°C
j
V
= 600 V
CC
= 150 °C
j
V
CC
= 900 V
16547 A
1369 kA²s
1k H z
1200 V
4664 A
3792 A
3600 A
1200 V
3558 A
2821 A
3600 A
2.01 2.26 V
2.49 2.69 V
0.80 0.90 V
0.70 0.80 V
0.34 0.38 mΩ
0.50 0.53 mΩ
1405 mJ
2520 mJ
S64
© by SEMIKRON Rev. 1.0 – 29.06.2015 1
Page 2
SKiiP 3614 GB12E4-6DUW
Characteristics
Symbol Conditions min. typ. max. Unit
Diode
V
SKiiP® 4
2-pack-integrated intelligent
Power System
SKiiP 3614 GB12E4-6DUW
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
•T
= 175°C
jmax
• Safety isolated switching and sensor
signals
• Digital signal transmission
•CAN Interface
• 100% tested IPM
•RoHS compliant
• UL file no. E242581
Typical Applications*
• Renewable energies
•Traction
•Elevators
• Industrial drives
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature T
is 150°C
vjop
= V
F
V
F0
r
F
E
rr
R
th(j-s)
R
th(j-r)
Driver
V
s
I
S0
I
s
V
IT+
V
IT-
R
IN
C
IN
t
pRESET
t
pReset(OCP)
t
TD
t
jitter
t
SIS
t
POR
I
digiout
V
it+ HALT
V
it-HALT
t
d(err)
I
TRIPSC
I
LL
T
trip
T
DriverTrip
V
DCtrip
V
DCtripLL
IF= 3600 A
EC
at terminal
at terminal
IF= 3600 A
T
per diode switch 0.0187 K/W
per diode switch 0.0158 K/W
supply voltage non stabilized 19.2 24 28.8 V
bias current @Vs= 24V, fsw = 0, IAC = 0 430 mA
k1=48mA/kHz, k2= 0.286 mA/A,
f
input threshold voltage (HIGH)
input threshold voltage (LOW)
input resistance 13 kΩ
input capacitance 1 nF
error memory reset time 1300 2900 ms
Over current reset time µs
top / bottom switch interlock time 3 µs
jitter clock time 52 58 ns
short pulse suppression time 0.6 µs
Power-On-Reset completed 3.5 s
digital output sink current
(HALT-signal)
input threshold voltage HIGH HALT
(Low -->High)
input threshold voltage LOW HALT
(High --> Low)
Error delay time (from detection to
HALT), (depends on kind of error)
over current trip level 5290 5400 5510 A
over temperature trip level 128 135 142 °C
over temperature PCB trip level 113 120 124 °C
over voltage trip level, can be
deactivated via CAN interface,
T
T
Tj=25°C
T
T
T
V
= 150 °C
j
=50Hz, sinusoidal current
out
V
=25°C
j
=150°C
j
=150°C
j
=25°C
j
=150°C
j
=600V
R
=900V
R
2.33 2.65 V
2.35 2.66 V
1.30 1.50 V
0.90 1.10 V
0.29 0.32 mΩ
0.40 0.43 mΩ
238 mJ
300 mJ
= 430 + k
0,7*V
s
* fsw+ k2 * I
1
0,3*V
s
16 mA
0,6*V
s
0.4*V
s
1.8 170 µs
n.a. A
950 980 1010 V
n.a. V
AC
mA
V
V
V
V
PEAK
PEAK
S64
2 Rev. 1.0 – 29.06.2015 © by SEMIKRON
Page 3
SKiiP 3614 GB12E4-6DUW
Characteristics
Symbol Conditions min. typ. max. Unit
System
t
SKiiP® 4
2-pack-integrated intelligent
Power System
SKiiP 3614 GB12E4-6DUW
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
•T
= 175°C
jmax
• Safety isolated switching and sensor
signals
• Digital signal transmission
•CAN Interface
• 100% tested IPM
•RoHS compliant
• UL file no. E242581
d(on)IO
t
d(off)IO
dV
CE
dV
CE
R
th(s-a)
R
CC'+EE'
L
CE
C
CHC
C
ps
I
CES
M
dc
M
ac
w SKiiP System w/o heat sink 4.84 kg
w
h
VCC= 600 V
I
T
/dt
on
Tj=25°C
V
/dt
off
flow rate = 15 l/min, T
water/glycol ratio 50%:50%
terminals to chip, Ts=25°C 0.045 mΩ
commutation inductance 3 nH
coupling capacitance secondary to
heat sink
coupling capacitance primary to
secondary
VGE=0V, VCE= 1200 V, Tj=25°C
+ I
RD
DC terminals 6 8 Nm
AC terminals 13 15 Nm
heat sink 5.77 kg
= 3600 A
C
=25°C
j
= 600 V
CC
turn on
propagation delay
time
turn off
propagation delay
time
=0A
I
C
= 3600 A
I
C
IC= 3600 A
=40°C,
Fluid
2.8 µs
3.8 µs
9k V / µ s
3k V / µ s
3k V / µ s
0.0051 K/W
8.4 nF
0.102 nF
0.527 mA
Typical Applications*
• Renewable energies
•Traction
•Elevators
• Industrial drives
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature T
is 150°C
vjop
S64
© by SEMIKRON Rev. 1.0 – 29.06.2015 3
Page 4
SKiiP 3614 GB12E4-6DUW
4 Rev. 1.0 – 29.06.2015 © by SEMIKRON
Page 5
SKiiP 3614 GB12E4-6DUW
Fig. 1: Typical IGBT output characteristics Fig. 2: Typical diode output characteristics
Fig. 3: Typical switching energy E = f(Ic) Fig. 4: Typical switching energy E = f(Ic)
Fig. 5: Transient thermal impedance Zth(j-s) Fig. 6: Transient thermal impedance Zth(j-r)
© by SEMIKRON Rev. 1.0 – 29.06.2015 5
Page 6
SKiiP 3614 GB12E4-6DUW
Fig. 7: Transient thermal impedance Zth(s-a) Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(s-a) versus flow rate V Fig. 10: Pressure drop Δ p versus flow rate V
6 Rev. 1.0 – 29.06.2015 © by SEMIKRON
Page 7
SKiiP 3614 GB12E4-6DUW
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 1.0 – 29.06.2015 7