SKiiP 28TMLI12F4V1
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
•Fast Trench 4 IGBTs
•Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results valid for
T
T
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
= TS (for baseplateless
C
≤150°C (recommended
j
=-40...+150°C)
jop
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 1
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
84 A
65 A
93 A
76 A
80 A
240 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 2
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
650 V
68 A
51 A
77 A
61 A
75 A
225 A
-20 ... 20 V
VCC= 360 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 650 V
=150°C
T
j
6µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 150 °C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
68 A
51 A
76 A
61 A
75 A
I
FRM
= 3 x I
Fnom
225 A
10 ms, sin 180°, Tj=150°C 430 A
-40 ... 175 °C
TMLI
© by SEMIKRON Rev. 1 – 17.02.2015 1
SKiiP 28TMLI12F4V1
MiniSKiiP® 2
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 2
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
I
= 2 x I
FRM
10 ms
sin 180°
Fnom
T
=25°C
s
T
=70°C
s
T
=25°C
j
=150°C
T
j
650 V
65 A
51 A
50 A
100 A
550 A
460 A
-40 ... 175 °C
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
•Fast Trench 4 IGBTs
•Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results valid for
T
T
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
= TS (for baseplateless
C
≤150°C (recommended
j
=-40...+150°C)
jop
Absolute Maximum Ratings
Symbol Conditions Values Unit
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
80 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=80A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 370 nC
Tj=25°C
VCE= 300 V
I
=80A
C
R
=1.6Ω
G on
R
=1.6Ω
G off
di/dt
= 1330 A/µs
on
di/dt
=1220A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/K*m
2.05 2.40 V
2.50 2.85 V
0.8 0.9 V
0.7 0.8 V
16 19 mΩ
23 26 mΩ
5.2 5.8 6.4 V
0.1 0.3 mA
mA
4.60 nF
0.37 nF
0.27 nF
4 Ω
168 ns
54 ns
3.4 mJ
285 ns
58 ns
2.2 mJ
0.49 K/W
Characteristics
Symbol Conditions min. typ. max. Unit
Module
M
s
to heat sink 2 2.5 Nm
wweight 55 g
TMLI
2 Rev. 1 – 17.02.2015 © by SEMIKRON
SKiiP 28TMLI12F4V1
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
•Fast Trench 4 IGBTs
•Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=75A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1.5mA
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 680 nC
Tj=25°C
VCE= 300 V
I
=75A
C
R
=1.6Ω
G on
R
=1.6Ω
G off
di/dt
= 2600 A/µs
on
di/dt
=1000A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/K*m
1.45 1.77 V
1.70 2.10 V
0.9 1 V
0.82 0.9 V
7.3 10 mΩ
12 16 mΩ
5.1 5.8 6.4 V
0.1 0.3 mA
mA
4.62 nF
0.30 nF
0.14 nF
4 Ω
84 ns
33 ns
1.6 mJ
212 ns
65 ns
1.9 mJ
0.89 K/W
Remarks
• Case temperature limited to TC=125°C
max.; T
= TS (for baseplateless
C
modules)
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
jop
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
TMLI
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 1
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=75A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=75A
di/dt
=2360A/µs
off
V
=-15V
GE
V
= 300 V
R
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
=25°C
T
j
=150°C
T
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.2 2.5 V
2.1 2.4 V
1.3 1.5 V
0.9 1.1 V
12 13 mΩ
16 18 mΩ
115 A
8.9 µC
1.7 mJ
0.86 K/W
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 2
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=50A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=50A
di/dt
=1250A/µs
off
V
=-15V
GE
V
= 300 V
R
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
T
=125°C
j
Tj=125°C
Tj=125°C
1.4 1.7 V
1.4 1.7 V
11.2V
0.9 1 V
6.7 9.8 mΩ
10 15 mΩ
48.7 A
5µC
0.7 mJ
1.25 K/W
© by SEMIKRON Rev. 1 – 17.02.2015 3
SKiiP 28TMLI12F4V1
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
•Fast Trench 4 IGBTs
•Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Temperature Sensor
R
100
B
100/125
Tr=100°C, tolerance=3%
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
3550 ±
2%
Ω
K
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results valid for
T
T
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
= TS (for baseplateless
C
≤150°C (recommended
j
=-40...+150°C)
jop
TMLI
4 Rev. 1 – 17.02.2015 © by SEMIKRON
SKiiP 28TMLI12F4V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 1 – 17.02.2015 5
SKiiP 28TMLI12F4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
6 Rev. 1 – 17.02.2015 © by SEMIKRON
SKiiP 28TMLI12F4V1
Fig. 13: Typ. output characteristic, inclusive R
Fig. 15: Typ. turn-on /-off energy = f (IC) Fig. 16: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 14: Rated current vs. temperature IC= f (TS)
Fig. 17: Typ. transfer characteristic Fig. 18: Typ. gate charge characteristic
© by SEMIKRON Rev. 1 – 17.02.2015 7
SKiiP 28TMLI12F4V1
Fig. 19: Typ. switching times vs. I
Fig. 21: Transient thermal impedance of IGBT and Diode Fig. 22: CAL diode forward characteristic
C
Fig. 20: Typ. switching times vs. gate resistor R
G
Fig. 23: Typ. CAL diode peak reverse recovery current Fig. 24: Typ. CAL diode recovery charge
8 Rev. 1 – 17.02.2015 © by SEMIKRON
SKiiP 28TMLI12F4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 1 – 17.02.2015 9
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