SKiiP 26MLI07E3V1
MiniSKiiP® 2
3-Level NPC Inverter
SKiiP 26MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC = 125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40…+150°C)
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
650 V
98 A
79 A
75 A
150 A
-20 ... 20 V
VCC= 360 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 650 V
=150°C
T
j
6µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2 x I
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
75 A
59 A
75 A
150 A
550 A
-40 ... 175 °C
Clamping diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
10 ms, sin 180°, Tj=25°C 550 A
j
=25°C
s
T
=70°C
s
75 A
59 A
75 A
150 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80°C, 20A per spring
terminal
120 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=75A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=1.2mA
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.45 1.77 V
1.70 2.10 V
0.9 1 V
0.82 0.9 V
7.3 10 mΩ
12 16 mΩ
5.1 5.8 6.4 V
0.1 0.3 mA
mA
4.62 nF
0.30 nF
0.14 nF
680 nC
4 Ω
MLI
© by SEMIKRON Rev. 0 – 02.04.2014 1
SKiiP 26MLI07E3V1
MiniSKiiP® 2
3-Level NPC Inverter
SKiiP 26MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC = 125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40…+150°C)
op
Characteristics
Symbol Conditions min. typ. max. Unit
T1 / T4
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCE= 300 V
I
=75A
C
V
= +15/-15 V
GE
R
=4.1Ω
G on
R
=3Ω
G off
di/dt
= 1330 A/µs
on
di/dt
=1140A/µs
off
per IGBT 0.6 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
119 ns
45 ns
2.8 mJ
250 ns
56 ns
2.8 mJ
T2 / T3
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCE= 300 V
I
=75A
C
V
= +15/-15 V
GE
R
=4.1Ω
G on
R
=3Ω
G off
di/dt
= 1550 A/µs
on
di/dt
=1100A/µs
off
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
113 ns
52 ns
1.6 mJ
247 ns
76 ns
2.7 mJ
0.6 K/W
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=75A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=75A
di/dt
=1500A/µs
off
V
=-15V
GE
per Diode 1 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.5 2 V
1.6 2.1 V
11.2V
0.9 1 V
6.7 9.8 mΩ
10 15 mΩ
56 A
6.3 µC
1.4 mJ
Clamping diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=75A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=75A
di/dt
=1350A/µs
off
V
=-15V
GE
per Diode 1 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.5 2 V
1.6 2.1 V
11.2V
0.9 1 V
6.7 9.8 mΩ
10 15 mΩ
56 A
7.1 µC
1.4 mJ
Module
M
s
to heat sink 2 2.5 Nm
wweight 55 g
Temperature Sensor
R
25
NTC, Tr = 25 °C
1)
5.0 ± 5% kΩ
MLI
2 Rev. 0 – 02.04.2014 © by SEMIKRON
SKiiP 26MLI07E3V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 0 – 02.04.2014 3
SKiiP 26MLI07E3V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 0 – 02.04.2014 © by SEMIKRON
SKiiP 26MLI07E3V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 0 – 02.04.2014 5
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