Page 1
SKiiP 24NAB176V1
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB176V1
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤125°C (recommended
j
T
=-40...+125°C)
j,op
•I
limited to 20A for +B, B, -B, -DC/
t(RMS)
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 125 °C
Tj= 150 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1700 V
33 A
23 A
38 A
29 A
29 A
58 A
-20 ... 20 V
VCC= 1200 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1700 V
=125°C
T
j
10 µs
-55 ... 150 °C
Chopper - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 125 °C
Tj= 150 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1700 V
33 A
23 A
38 A
29 A
29 A
58 A
-20 ... 20 V
VCC= 1200 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1700 V
=125°C
T
j
10 µs
-55 ... 150 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 125 °C
Tj= 175 °C
I
= 2 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1700 V
37 A
24 A
48 A
38 A
40 A
80 A
280 A
-40 ... 175 °C
Freewheeling - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 125 °C
Tj= 175 °C
I
= 2 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1700 V
37 A
24 A
48 A
38 A
40 A
80 A
280 A
-40 ... 175 °C
NAB
© by SEMIKRON Rev. 1 – 03.11.2014 1
Page 2
SKiiP 24NAB176V1
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
V
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
Ts=25°C, Tj=150°C
1800 V
59 A
DC current 41 A
10 ms
sin 180°
10 ms
sin 180°
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
370 A
270 A
685 A
365 A
T
-40 ... 150 °C
2
2
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
40 A
-40 ... 125 °C
AC sinus 50 Hz, 1 min 2500 V
s
s
SKiiP 24NAB176V1
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤125°C (recommended
j
T
=-40...+125°C)
j,op
•I
limited to 20A for +B, B, -B, -DC/
t(RMS)
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
NAB
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=29A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1.2mA
VGE=0V
V
= 1700 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 240 nC
Tj=25°C
VCC= 900 V
I
=20A
C
R
=1Ω
G on
R
=1Ω
G off
di/dt
=580A/µs
on
di/dt
=120A/µs
off
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=125°C
T
j
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
2.00 2.45 V
2.45 2.90 V
11.2V
0.9 1.1 V
34 43 mΩ
53 62 mΩ
5.2 5.8 6.4 V
0.1 0.3 mA
mA
2.50 nF
0.11 nF
0.08 nF
32 Ω
290 ns
40 ns
5.1 mJ
690 ns
120 ns
du/dt = 4000 V/µs
E
R
off
th(j-s)
= +15/-15 V
GE
L
=47nH
s
per IGBT, λ
paste
Tj=125°C
=0.8 W/K*m
6.3 mJ
0.91 K/W
V
Chopper - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
Q
R
Gint
IC=29A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1.2mA
VGE=0V
V
= 1700 V
CE
G
- 8 V...+ 15 V 240 nC
Tj=25°C
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
2.00 2.45 V
2.45 2.90 V
11.2V
0.9 1.1 V
34 43 mΩ
53 62 mΩ
5.2 5.8 6.4 V
0.1 0.3 mA
mA
32 Ω
2 Rev. 1 – 03.11.2014 © by SEMIKRON
Page 3
SKiiP 24NAB176V1
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB176V1
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤125°C (recommended
j
T
=-40...+125°C)
j,op
•I
limited to 20A for +B, B, -B, -DC/
t(RMS)
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
t
d(on)
t
r
E
t
d(off)
t
f
VCC= 900 V
I
=20A
C
R
=1Ω
on
G on
R
G off
di/dt
di/dt
=1Ω
=580A/µs
on
=120A/µs
off
=125°C
T
j
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
290 ns
40 ns
5.1 mJ
690 ns
120 ns
du/dt = 4000 V/µs
E
R
off
th(j-s)
= +15/-15 V
GE
L
=47nH
s
per Diode, λ
=0.8 W/K*m
paste
Tj=125°C
6.3 mJ
0.91 K/W
V
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=40A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=20A
di/dt
=620A/µs
off
V
=-15V
GE
V
= 900 V
CC
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
22.4V
2.1 2.6 V
1.3 1.6 V
1.1 1.2 V
17 20 mΩ
27 33 mΩ
32.7 A
8.7 µC
4.9 mJ
1.14 K/W
Freewheeling - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=40A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=20A
di/dt
=620A/µs
off
V
=-15V
GE
V
= 900 V
CC
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
=25°C
T
j
T
=150°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
22.4V
2.1 2.6 V
1.3 1.6 V
1.1 1.2 V
17 20 mΩ
27 33 mΩ
32.7 A
8.7 µC
4.9 mJ
1.14 K/W
Rectifier - Diode
V
V
r
R
F
F0
F
th(j-s)
= V
EC
IF=41A
V
=0V
GE
chiplevel
chiplevel
chiplevel
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
1.2 1.5 V
1.2 1.4 V
0.6 0.9 1.1 V
0.7 1 V
7.9 8.7 mΩ
10 11 mΩ
1.32 K/W
Module
M
s
to heat sink 2 2.5 Nm
w55g
L
CE
31 nH
Temperature Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Ω
NAB
© by SEMIKRON Rev. 1 – 03.11.2014 3
Page 4
SKiiP 24NAB176V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 1 – 03.11.2014 © by SEMIKRON
Page 5
SKiiP 24NAB176V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
© by SEMIKRON Rev. 1 – 03.11.2014 5
Page 6
SKiiP 24NAB176V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6 Rev. 1 – 03.11.2014 © by SEMIKRON
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