Datasheet SKIIP24ACC12T4V10 DataSheet (Semikron)

SKiiP 24ACC12T4V10

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT 1 - 6

V

I

C

I

C

I

Cnom

MiniSKiiP® 2

Twin 6-pack

SKiiP 24ACC12T4V10

Features

•Trench 4 IGBTs

• Robust and soft freewheeling diodes in
CAL technology

• Highly reliable spring contacts for
electrical connections

• UL recognised: File no. E63532

Typical Applications*

•4Q inverters

Remarks

• Max. case temperature limited to
T

=125°C

C

• Product reliability results valid for
T

≤150°C (recommended

j

T

=-40...+150°C)

j,op

• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems

• DC-link voltage V

• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to –DC
potential

• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information

DC

≤800V

I

CRM

V

t

psc

T

IGBT 7 - 12

V

I

C

I

C

I

Cnom

I

CRM

V

t

psc

T

Diode 1 - 6

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

Diode 7 - 12

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

Module

I

t(RMS)

T

V

CES

GES

j

CES

GES

j

RRM

j

RRM

j

stg

isol

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

1200 V

41 A

34 A

45 A

37 A

25 A

I

CRM

= 3 x I

Cnom

75 A

-20 ... 20 V

VCC= 800 V
V

GE

V

CES

≤ 15 V

≤ 1200 V

=150°C

T

j

10 µs

-40 ... 175 °C

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

1200 V

52 A

43 A

58 A

48 A

35 A

I

CRM

= 3 x I

Cnom

105 A

-20 ... 20 V

VCC= 800 V
V

GE

V

CES

≤ 15 V

≤ 1200 V

=150°C

T

j

10 µs

-40 ... 175 °C

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

1200 V

32 A

26 A

35 A

28 A

25 A

I

FRM

= 3xI

Fnom

75 A

10 ms, sin 180°, Tj=150°C 100 A

-40 ... 175 °C

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

1200 V

44 A

35 A

49 A

40 A

35 A

I

FRM

= 3 x I

Fnom

105 A

10 ms, sin 180°, Tj=150°C 170 A

-40 ... 175 °C

20 A per spring 40 A

-40 ... 125 °C

AC sinus 50 Hz, 1 min 2500 V

ACC

© by SEMIKRON Rev. 4.0 – 20.11.2015 1

SKiiP 24ACC12T4V10

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT 1 - 6

V

V

r

CE

MiniSKiiP® 2

Twin 6-pack

SKiiP 24ACC12T4V10

Features

•Trench 4 IGBTs

• Robust and soft freewheeling diodes in
CAL technology

• Highly reliable spring contacts for
electrical connections

• UL recognised: File no. E63532

Typical Applications*

•4Q inverters

Remarks

• Max. case temperature limited to
T

=125°C

C

• Product reliability results valid for
T

≤150°C (recommended

j

T

=-40...+150°C)

j,op

• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems

• DC-link voltage V

• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to –DC
potential

• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information

DC

≤800V

V

I

CES

C

C

C

Q

R

t

d(on)

t

r

E

t

d(off)

t

f

E

R

R

IGBT 7 - 12

V

V

r

CE

V

I

CES

C

C

C

Q

R

t

d(on)

t

r

E

t

d(off)

t

f

E

R

R

CE(sat)

CE0

GE(th)

ies

oes

res

G

Gint

on

off

th(j-s)

th(j-s)

CE(sat)

CE0

GE(th)

ies

oes

res

G

Gint

on

off

th(j-s)

th(j-s)

IC=25A
V

=15V

GE

chiplevel

chiplevel

VGE=15V
chiplevel

T

T

T

T

T

T

VGE=VCEV, IC=1mA

VGE=0V
V

= 1200 V

CE

VCE=25V
V

=0V

GE

T

f=1MHz

f=1MHz

f=1MHz

VGE= - 8 V...+ 15 V

Tj=25°C
VCC= 600 V

I

=25A

C

R

=39Ω

G on

R

=39Ω

G off

di/dt

=250A/µs

on

di/dt

=400A/µs

off

T

Tj=150°C

Tj=150°C

Tj=150°C

Tj=150°C
du/dt = 3600 V/µs
V

= +15/-15 V

GE

L

=22nH

s

per IGBT, λ

per IGBT, λ

IC=35A
V

=15V

GE

chiplevel

chiplevel

VGE=15V
chiplevel

paste

paste

Tj=150°C

=0.8 W/(mK)

=2.5 W/(mK)

T

T

T

T

T

T

VGE=VCEV, IC=1mA

VGE=0V
V

= 1200 V

CE

VCE=25V
V

=0V

GE

T

f=1MHz

f=1MHz

f=1MHz

VGE= - 8 V...+ 15 V

Tj=25°C
VCC= 600 V

I

=35A

C

R

=16Ω

G on

R

=16Ω

G off

di/dt

=680A/µs

on

di/dt

=560A/µs

off

T

Tj=150°C

Tj=150°C

Tj=150°C

Tj=150°C
du/dt = 4000 V/µs
V

= +15/-15 V

GE

L

=22nH

s

per IGBT, λ

per IGBT, λ

paste

paste

Tj=150°C

=0.8 W/(mK)

=2.5 W/(mK)

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

=25°C

j

=150°C

j

1.85 2.10 V

2.25 2.45 V

0.80 0.90 V

0.70 0.80 V

42 48 mΩ

62 66 mΩ

55.86.5V

0.1 0.3 mA

mA

1.43 nF

0.12 nF

0.09 nF

142 nC

0.0 Ω

96 ns

80 ns

4.2 mJ

400 ns

51 ns

2.6 mJ

1K/W

0.84 K/W

1.85 2.10 V

2.25 2.45 V

0.80 0.90 V

0.70 0.80 V

30 34 mΩ

44 47 mΩ

55.86.5V

0.1 0.3 mA

-mA

1.95 nF

0.16 nF

0.12 nF

200 nC

0 Ω

52 ns

34 ns

3.9 mJ

337 ns

53 ns

3.5 mJ

0.85 K/W

0.7 K/W

ACC

2 Rev. 4.0 – 20.11.2015 © by SEMIKRON

SKiiP 24ACC12T4V10

Characteristics

Symbol Conditions min. typ. max. Unit

Diode 1 - 6

V

V

r

F

MiniSKiiP® 2

Twin 6-pack

SKiiP 24ACC12T4V10

Features

•Trench 4 IGBTs

• Robust and soft freewheeling diodes in
CAL technology

• Highly reliable spring contacts for
electrical connections

• UL recognised: File no. E63532

Typical Applications*

•4Q inverters

Remarks

• Max. case temperature limited to
T

=125°C

C

• Product reliability results valid for
T

≤150°C (recommended

j

T

=-40...+150°C)

j,op

• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems

• DC-link voltage V

• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to –DC
potential

• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information

DC

≤800V

I

RRM

Q

E

R

R

Diode 7 - 12

V

V

r

F

I

RRM

Q

E

R

R

Module

L

M

w55g

Temperature Sensor

R

R(T)

= V

F

F0

rr

rr

th(j-s)

th(j-s)

= V

F

F0

rr

rr

th(j-s)

th(j-s)

CE

s

100

EC

EC

IF=25A
V

=0V

GE

chiplevel

chiplevel

chiplevel

IF=25A
di/dt

=380A/µs

off

V

=-15V

GE

V

= 600 V

CC

per Diode, λ

per Diode, λ

IF=35A
V

=0V

GE

chiplevel

chiplevel

chiplevel

IF=35A
di/dt

=720A/µs

off

V

=-15V

GE

V

= 600 V

CC

per Diode, λ

per Diode, λ

=0.8 W/(mK)

paste

=2.5 W/(mK)

paste

=0.8 W/(mK)

paste

=2.5 W/(mK)

paste

T

=25°C

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

Tj=150°C

T

=25°C

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

Tj=150°C

2.41 2.74 V

2.45 2.79 V

1.30 1.50 V

0.90 1.10 V

44 50 mΩ

62 68 mΩ

17 A

4µC

1.4 mJ

1.52 K/W

1.31 K/W

2.30 2.62 V

2.29 2.62 V

1.30 1.50 V

0.90 1.10 V

29 32 mΩ

40 43 mΩ

28 A

5.8 µC

2.3 mJ

1.2 K/W

1K/W

30 nH

to heat sink 2 2.5 Nm

Tr=100°C (R25=1000Ω)

R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10

-5°C-2

2

1670 ±

3%

Ω

ACC

© by SEMIKRON Rev. 4.0 – 20.11.2015 3

SKiiP 24ACC12T4V10

IGBT 1-6 - Fig. 1:
Typ. output characteristic

IGBT 1-6 - Fig. 3:
Typ. turn-on /-off energy = f(I

IGBT 1-6 - Fig. 2:
Typ. rated current vs. temperature I

= f(TS)

C

IGBT 1-6 - Fig. 4:

)

C

Typ. turn-on /-off energy = f(R

)

G

IGBT 1-6 - Fig. 5:
Typ. transfer characteristic

IGBT 1-6 - Fig. 6:
Typ. gate charge characteristic

4 Rev. 4.0 – 20.11.2015 © by SEMIKRON

SKiiP 24ACC12T4V10

IGBT 1-6 - Fig. 7:
Typ. switching times vs. I

IGBT 1-6 - Fig. 9:
Transient thermal impedance of IGBT and Diode

C

IGBT 1-6 - Fig. 8:
Typ. switching times vs. gate resistor R

IGBT 1-6 - Fig. 10:
CAL diode forward characteristic

G

IGBT 1-6 - Fig. 11:
Typ. CAL diode peak reverse recovery current

© by SEMIKRON Rev. 4.0 – 20.11.2015 5

IGBT 1-6 - Fig. 12:
Typ. CAL diode recovery charge

SKiiP 24ACC12T4V10

IGBT 7-12 - Fig. 1:
Typ. output characteristic

IGBT 7-12 - Fig. 3:
Typ. turn-on /-off energy = f(I

IGBT 7-12 - Fig. 2:
Typ. rated current vs. temperature I

= f(TS)

C

IGBT 7-12 - Fig. 4:

)

C

Typ. turn-on / -off energy = f(R

)

G

IGBT 7-12 - Fig. 5:
Typ. transfer characteristic

IGBT 7-12 - Fig. 6:
Typ. gate charge characteristic

6 Rev. 4.0 – 20.11.2015 © by SEMIKRON

SKiiP 24ACC12T4V10

IGBT 7-12 - Fig. 7:
Typ. switching times vs. I

IGBT 7-12 - Fig. 9:
Transient thermal impedance of IGBT and Diode

C

IGBT 7-12 - Fig. 8:
Typ. switching times vs. gate resistor R

IGBT 7-12 - Fig. 10:
CAL diode forward characteristic

G

IGBT 7-12 - Fig. 11:
Typ. CAL diode peak reverse recovery current

© by SEMIKRON Rev. 4.0 – 20.11.2015 7

IGBT 7-12 - Fig. 12:
Typ. CAL diode recovery charge

SKiiP 24ACC12T4V10

pinout, dimensions

pinout

8 Rev. 4.0 – 20.11.2015 © by SEMIKRON

SKiiP 24ACC12T4V10

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.

*IMPORTANT INFORMATION AND WARNINGS

The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.

© by SEMIKRON Rev. 4.0 – 20.11.2015 9