SKiiP 23NAB12T4V1
MiniSKiiP® 2
SKiiP 23NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Typical Applications*
• Inverter up to 14 kVA
• Typical motor power 7,5 kW
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
33 A
26 A
37 A
30 A
25 A
75 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Chopper - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
33 A
26 A
37 A
30 A
25 A
75 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3xI
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
29 A
22 A
32 A
26 A
25 A
75 A
100 A
-40 ... 175 °C
Freewheeling - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3xI
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
29 A
22 A
32 A
26 A
25 A
75 A
100 A
-40 ... 175 °C
NAB
© by SEMIKRON Rev. 3 – 02.12.2011 1
SKiiP 23NAB12T4V1
MiniSKiiP® 2
SKiiP 23NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Typical Applications*
• Inverter up to 14 kVA
• Typical motor power 7,5 kW
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
V
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
Ts=25°C, Tj=150°C
10 ms
sin 180°
10 ms
sin 180°
T
T
T
T
=25°C
j
=150°C
j
=25°C
j
=150°C
j
1600 V
52 A
13 A
370 A
270 A
685 A
365 A
-40 ... 150 °C
2
2
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20A per spring
terminal
40 A
-40 ... 125 °C
AC sinus 50Hz, 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=25A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 142 nC
Tj=25°C
VCC= 600 V
I
=25A
C
R
=24
G on
R
=24
G off
V
= +15/-15 V
GE
per IGBT 1.2 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
42 48 m
62 66 m
55.86.5V
0.1 0.3 mA
mA
1.43 nF
0.12 nF
0.09 nF
0.00
28 ns
40 ns
2.65 mJ
295 ns
68 ns
2.3 mJ
Chopper - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
Q
R
Gint
IC=25A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
G
- 8 V...+ 15 V 142 nC
Tj=25°C
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
42 48 m
62 66 m
55.86.5V
0.1 0.3 mA
mA
0.00
s
s
NAB
2 Rev. 3 – 02.12.2011 © by SEMIKRON
SKiiP 23NAB12T4V1
MiniSKiiP® 2
SKiiP 23NAB12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Typical Applications*
• Inverter up to 14 kVA
• Typical motor power 7,5 kW
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCC= 600 V
I
=25A
C
R
=24
G on
R
=24
G off
= +15/-15 V
V
GE
per IGBT 1.2 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
28 ns
40 ns
2.65 mJ
295 ns
68 ns
2.3 mJ
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=25A
EC
V
=0V
GE
chiplevel
IF=25A
di/dt
=850A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 1.52 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.40 2.7 V
2.5 2.8 V
1.3 1.5 V
0.9 1.1 V
44 50 m
62 68 m
24 A
3.7 µC
1.6 mJ
Freewheeling - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=25A
EC
V
=0V
GE
chiplevel
IF=25A
di/dt
=850A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 1.52 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.4 2.7 V
2.5 2.8 V
1.3 1.5 V
0.9 1.1 V
44 50 m
62 68 m
24 A
3.7 µC
1.6 mJ
Rectifier - Diode
V
V
r
R
F
F0
F
th(j-s)
= V
IF=13A
EC
V
=0V
GE
chiplevel
per Diode 1.25 K/W
T
=25°C
j
=125°C
T
j
Tj=25°C
T
=125°C
j
Tj=25°C
T
=125°C
j
11.21V
1.1 V
1.0 V
0.8 V
9.2 18 m
21 m
Module
M
s
to heat sink 2 2.5 Nm
w65g
Temperatur Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
NAB
© by SEMIKRON Rev. 3 – 02.12.2011 3
SKiiP 23NAB12T4V1
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 3 – 02.12.2011 © by SEMIKRON
SKiiP 23NAB12T4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
© by SEMIKRON Rev. 3 – 02.12.2011 5
SKiiP 23NAB12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6 Rev. 3 – 02.12.2011 © by SEMIKRON
Loading...