SKiiP 23AC12T4V1
MiniSKiiP® 2
SKiiP 23AC12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
41 A
34 A
25 A
75 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
10 ms, sin 180°, Tj=150°C 100 A
j
=25°C
s
T
=70°C
s
32 A
26 A
25 A
75 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20A per spring
terminal
100 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 2500 V
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=25A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC=1mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 142 nC
Tj=25°C
VCC= 600 V
I
=25A
C
R
=39
G on
R
=39
G off
di/dt
=465A/µs
on
di/dt
=350A/µs
off
V
= +15/-15 V
GE
per IGBT 1 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
42 48 m
62 66 m
55.86.5V
0.1 0.3 mA
mA
1.43 nF
0.12 nF
0.09 nF
0.00
44 ns
46 ns
3.7 mJ
330 ns
62 ns
2.4 mJ
AC
© by SEMIKRON Rev. 4 – 02.12.2011 1
SKiiP 23AC12T4V1
MiniSKiiP® 2
SKiiP 23AC12T4V1
Features
•Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=25A
EC
V
=0V
GE
chiplevel
IF=25A
di/dt
=640A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 1.52 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.4 2.7 V
2.5 2.8 V
1.3 1.5 V
0.9 1.1 V
44 50 m
62 68 m
19 A
4µC
1.64 mJ
Module
M
s
to heat sink 2 2.5 Nm
w65g
Temperatur Sensor
R
100
R(T)
TC=100°C (R25=1000)
R(T)=1000[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Remarks
•V
• Case temp. limited to T
• product rel. results valid for Tj≤150
, VF= chip level value
CEsat
(for baseplateless modules T
= 125°C max.
C
C
(recomm. Top = -40 ... +150°C)
= TS)
AC
2 Rev. 4 – 02.12.2011 © by SEMIKRON
SKiiP 23AC12T4V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 4 – 02.12.2011 3
SKiiP 23AC12T4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 4 – 02.12.2011 © by SEMIKRON
SKiiP 23AC12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 4 – 02.12.2011 5
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